Dataset for "Ferroelectric Domain Wall p-n Junctions"



These files are the raw data used to generate the plots shown in the Figures in Maguire, Jesi; McCluskey, Conor; Holsgrove, Kristina; Suna, Ahmet; Kumar, Amit; McQuaid, Raymond; Gregg, J. Nano Lett 2023.

We have used high-voltage Kelvin Probe Force Microscopy to map the spatial distribution of electrical potential, dropped along curved current-carrying conducting domain walls, in x-cut single crystal ferroelectric lithium niobate thin films. We find that in-operando potential profiles and extracted electric fields, associated with p-n junctions contained within the walls, can be fully rationalised through expected variations in wall resistivity alone. There is no need to invoke additional physics (carrier depletion zones, space-charge fields) normally associated with extrinsically doped semiconductor p-n junctions. Indeed, we argue that this should not even be expected, as inherent Fermi level differences between p- and n- regions, at the core of conventional p-n junction behaviour, cannot occur in domain walls that are surrounded by a common matrix. This is important for domain wall nanoelectronics, as such in-wall junctions will neither act as diodes nor facilitate transistors in the same way as extrinsic semiconducting systems do.
Date made available01 Jan 2024
PublisherQueen's University Belfast
Date of data production01 Nov 2022

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