Amit Kumar

Dr

  • Room 01.019 - New Physics

    United Kingdom

Accepting PhD Students

20062021

Research activity per year

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  • Conference contribution

    Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

    Muller, J., Boscke, T. S., Muller, S., Yurchuk, E., Polakowski, P., Paul, J., Martin, D., Schenk, T., Khullar, K., Kersch, A., Weinreich, W., Riedel, S., Seidel, K., Kumar, A., Arruda, T. M., Kalinin, S. V., Schlosser, T., Boschke, R., van Bentum, R., Schroder, U. & 1 others, Mikolajick, T., 01 Dec 2013, Electron Devices Meeting (IEDM), 2013 IEEE International. p. 10.8.1-10.8.4

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    119 Citations (Scopus)