Research Output per year
Research Output 1987 2019
- 1 - 50 out of 114 results
- Publication Year, Title (descending)
Development of photodiode via the Rapid Melt Growth (RMG) materials for energy conversion device
Zainal, N., Mitchell, N., McNeill, D. & Jubadi, W. M., Jun 2019.Research output: Contribution to conference › Paper
Electrical characterisation of PVD germanium resistors with rapid melt growth (RMG) process
Zainal, N., Mitchell, S. J. N. & McNeill, D. W., 12 Nov 2018, AIP Conference Proceedings. 1 ed. AIP Publishing, Vol. 2030. 7 p. 020109. (AIP Conference Proceedings; vol. 2030).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Comparison between Scotch tape and gel-assisted mechanical exfoliation techniques for preparation of 2D transition metal dichalcogenide flakes
Budania, P., Baine, P. T., Montgomery, J. H., McNeill, D. W., Mitchell, S. J. N., Modreanu, M. & Hurley, P. K., 01 Dec 2017, In : Micro and Nano Letters. 12, 12, p. 970-973 4 p.Research output: Contribution to journal › Article
Effect of post-exfoliation treatments on mechanically exfoliated MoS2
Budania, P., Baine, P. T., Montgomery, J. H., McNeill, D. W., Mitchell, S. J. N., Modreanu, M. & Hurley, P. K., 22 Feb 2017, In : Materials Research Express. 4, 2, 025022.Research output: Contribution to journal › Article
Hafnium dioxide (HfO2) as micro-crucible liner on GeOI for rapid melt growth (RMG) structure
Zainal, N., Mitchell, S. J. N. & McNeill, D. W., 01 Jan 2017, In : Journal of Telecommunication, Electronic and Computer Engineering. 9, 3-8, p. 137-140Research output: Contribution to journal › Article
Long-term stability of mechanically exfoliated MoS2 flakes
Budania, P., McNeill, D., Mitchell, N., Modreanu, M. & Hurley, P., 2017.Research output: Contribution to conference › Paper
Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate
Tan, T. H., Mitchell, S. J. N., McNeill, D. W., Wadsworth, H., Strahan, S. & Bailie, I., 30 Mar 2017, International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings. IEEE , p. 189-193 5 p.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Effect of Post-Exfoliation Treatments on Mechanically Exfoliated MoS2
Budania, P., Mitchell, N. & McNeill, D., 27 May 2016.Research output: Contribution to conference › Paper
Post-exfoliation annealing and ultrasonic treatment on mechanically exfoliated MoS2
Budania, P., Mitchell, N. & McNeill, D., Jun 2016.Research output: Contribution to conference › Paper
High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces
Chauhan, L., Gajula, D. R., McNeill, D. & Hughes, G., 01 Nov 2015, In : Microelectronic Engineering. 147, p. 249-253 5 p.Research output: Contribution to journal › Article
Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers
Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. & McNeill, D. W., 06 Jan 2014, In : Applied Physics Letters. 104, 1, 012102.Research output: Contribution to journal › Article
High-temperature stability study of 1 nm Al2O3 deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy
Chellappan, R. K., Gajula, D. R., McNeill, D. & Hughes, G., 03 Jan 2014, In : Journal of Physics D: Applied Physics. 47, 5, 055107.Research output: Contribution to journal › Article
High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission
Chauhan, L., Gajula, D. R., McNeill, D. & Hughes, G., 30 Oct 2014, In : Applied Surface Science. 317, p. 696-700 5 p.Research output: Contribution to journal › Article
High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photo emission
Chellappan, R. K., Gajula, D. R., McNeill, D. & Hughes, G., 15 Feb 2014, In : Applied Surface Science. 292, p. 345-349 5 p.Research output: Contribution to journal › Article
A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup
Tan, T. H., Mitchell, N., McNeill, D., Wadsworth, H. & Strahan, S., 2013. 5 p.Research output: Contribution to conference › Paper
Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator
Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M., Baine, P., Adley, D. & Perova, T. S., Apr 2012, In : ECS Transactions. 45, p. 169-180 12 p.Research output: Contribution to journal › Article
Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs
Murad, S., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Armstrong, M. & Modreanu, M., Apr 2012, In : ECS Transactions. 45, 3, p. 137-144 8 p.Research output: Contribution to journal › Article
Evaluation of the piezoresistance properties of p-type silicon
Tan, T., McNeill, D., Baine, P., Montgomery, J., Mitchell, N., Wadsworth, H., Strahan, S. & Bailie, I., 09 Sep 2012.Research output: Contribution to conference › Poster
Investigation of crystalline quality and stress in germanium stripes fabricated by rapid melt growth process
Perova, T. S., Zainal, N., Adley, D., Mitchell, N., McNeill, D., Bain, M., Armstrong, M. & Baine, P., Jul 2012.Research output: Contribution to conference › Paper
Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples
Wasyluk, J., Rainey, P. V., Perova, T. S., Mitchell, N., McNeill, D., Gamble, H., Armstrong, M. & Hurley, R., Mar 2012, In : Journal of Raman Spectroscopy. 43, 3, p. 448-454 7 p.Research output: Contribution to journal › Article
Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2
Murad, S. N. A., Baine, P. T., McNeill, D. W., Mitchell, N., Armstrong, B. M., Modreanu, M., Hughes, G. & Chellappan, R. K., Dec 2012, In : SOLID-STATE ELECTRONICS. 78, p. 136-140 5 p.Research output: Contribution to journal › Article
Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs
Gajula, D. R., McNeill, D., Baine, P., Fleming, P., Duffy, R. & Armstrong, B. M., May 2011, In : ECS Transactions. 35, 3, p. 521-527 7 p.Research output: Contribution to journal › Article
Germanium Processing
Gamble, H., Armstrong, M., Baine, P., Low, Y. H., Rainey, P. V., Mitchell, N. & McNeill, D., Feb 2011, Semiconductor-On-Insulator Materials for Nanoelectronics Applications. Nazarov, C., Balestra, Raskin, Gamiz & Lysenko (eds.). Springer, p. 3-29 27 p.Research output: Chapter in Book/Report/Conference proceeding › Chapter
High quality thin-film Ge on insulator by Rapid Melt Growth
Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M., Baine, P., Adley, D. & Perova, T., Jul 2011, p. 1-1. 1 p.Research output: Contribution to conference › Paper
Investigation of crystalline quality and stress in Germanium-On-Insulator layers
Litvin, A., Adley, D., Perova, T. S., Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M. & Baine, P., Aug 2011, p. 62-62. 1 p.Research output: Contribution to conference › Paper
Investigation of germanium implanted with hydrogen for layer transfer applications
Perova, T. S., Armstrong, M., Wasyluk, J., Baine, P., Rainey, P., Mitchell, N., McNeill, D., Gamble, H. & Hurley, R., Aug 2011, In : Solid State Phenomena. 178-179, p. 295-300 6 p.Research output: Contribution to journal › Article
Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2
Murad, S., McNeill, D., Mitchell, N., Armstrong, M., Modreanu, M., Hughes, G. & Chellappan, R. K., Dec 2011. 2 p.Research output: Contribution to conference › Paper
(Invited) Germanium on Sapphire Technology
Gamble, H., Baine, P. B., Low, Y. H., Rainey, P. V., Montgomery, J. H., Bain, M. F., Armstrong, B. M., McNeill, D. W. & Mitchell, N. S., Nov 2010, In : ECS Transactions. 33, 11, p. 37-50 14 p.Research output: Contribution to journal › Article
Application of atmospheric plasma for low temperature wafer bonding
Low, Y. W., Rainey, P., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 385-393 9 p.Research output: Contribution to journal › Article
Atmospheric-pressure plasma activation for low temperature bonding
Low, Y. W., Rainey, P., Baine, P., Montgomery, J., Mitchell, N., McNeill, D., Gamble, H. & Armstrong, M., Oct 2010, p. 0-0. 1 p.Research output: Contribution to conference › Paper
Carrier mobility variations in self-aligned germanium MOS transistors
Low, Y., Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Apr 2010, In : ECS Transactions. 28(1), p. 43-49 7 p.Research output: Contribution to journal › Article
Circular geometry transistors fabricated on germanium-on-alumina bonded substrates
Baine, P., Low, Y., Rainey, P., Gamble, H., Armstrong, M., Mitchell, N. & McNeill, D., Oct 2010, p. 0-0. 1 p.Research output: Contribution to conference › Paper
Dopant Transport in Tungsten Silicide Buried Layers for Application in SSOI
Armstrong, M., Baine, P., Montgomery, J., McNeill, D., Gamble, H. & Bain, M., Apr 2010, In : ECS Transactions. 28(1), p. 331-341 11 p.Research output: Contribution to journal › Article
Electrical characterization of ALD Al2O3 and HfO2 films on germanium
Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., 2010, In : ECS Transactions. 28, 1, p. 201-207 7 p.Research output: Contribution to journal › Article
Germanium on Sapphire Technology
Gamble, H., Baine, P., Low, Y., Rainey, P., Montgomery, J., Armstrong, M., McNeill, D. & Mitchell, N., Nov 2010, In : ECS Transactions. 33(11), p. 37-50 14 p.Research output: Contribution to journal › Article
Hydrogen and helium implantation in germanium for semiconductor layer transfer applications
Hurley, R., Rainey, P., Low, Y. W., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Jun 2010, p. 56-56. 1 p.Research output: Contribution to conference › Paper
Hydrogen implantation in germanium
Low, Y. W., Rainey, P., Hurley, R., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 375-383 9 p.Research output: Contribution to journal › Article
Raman mapping analysis of structural damage in ion implanted bevelled Ge samples with application in smart cut technology
Wasyluk, J., Rainey, P., Perova, T. S., Hurley, R., Mitchell, N., McNeill, D., Gamble, H. & Armstrong, M., Aug 2010, p. 0-0. 1 p.Research output: Contribution to conference › Paper
Surface activation treatment using atmospheric pressure plasma for low temeprature direct wafer bonding
Low, Y. W., Gamble, H., Armstrong, M., Rainey, P., Baine, P., Montgomery, J., Mitchell, N. & McNeill, D., Jun 2010, p. 0-0. 1 p.Research output: Contribution to conference › Paper
Carrier mobility variations in self-aligned germanium MOS transistors
Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.Research output: Contribution to conference › Paper
Dopant transport in tungsten silicide layers for application in SOI technology
Liao, S., Bain, M., Baine, P., Montgomery, J., McNeill, D., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.Research output: Contribution to conference › Paper
Electrical characterisation of ALD Al2O3 and HfO2 films on germanium
Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.Research output: Contribution to conference › Paper
Electronic characterisation of Ge MOSTs measured at low temperature
McNeill, D., Low, Y., Tantraviwat, D., Rainey, P., Baine, P., Mitchell, N., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.Research output: Contribution to conference › Paper
Germanium MOS transistors on sapphire and alumina platforms
Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y., Low, Y. W. & Tantraviwat, D., Oct 2009, p. 59-60. 2 p.Research output: Contribution to conference › Paper
Hydrogen and helium implantation in germanium for layer transfer applications
Rainey, P., Low, Y. W., Hurley, R., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Dec 2009, p. 0-0. 1 p.Research output: Contribution to conference › Paper
Low temperature measurement of TFTs fabricated on germanium-on-sapphire substrates
Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y., Low, Y. W. & Tantraviwat, D., Sep 2009, p. 0-0. 1 p.Research output: Contribution to conference › Paper
Low temperature processes for manufacture of germanium MOS transistors
Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y., Low, Y. W. & Tantraviwat, D., Jan 2009, p. 143-144. 2 p.Research output: Contribution to conference › Paper
Optimisation of tungsten disilicide dopant diffusion conduits for SSOI applications
Liao, S., Bain, M., Baine, P., McNeill, D., Armstrong, M. & Gamble, H., Jan 2009, p. 83-84. 2 p.Research output: Contribution to conference › Paper
The effect of atmospheric oxygen plasma on buried oxide layer for low temeprature wafer bonding
Low, Y. W., Rainey, P., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Dec 2009, p. 0-0. 1 p.Research output: Contribution to conference › Paper
Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates
McNeill, D., Bhattacharya, S., Wadsworth, H., Ruddell, F., Mitchell, N., Armstrong, M. & Gamble, H., Feb 2008, In : Journal of Materials Science: Materials in Electronics. 19, 2, p. 119-123 5 p.Research output: Contribution to journal › Article