• Room 07.012 - Ashby Tower

    United Kingdom

1987 …2019
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Research Output 1987 2019

2019

Development of photodiode via the Rapid Melt Growth (RMG) materials for energy conversion device

Zainal, N., Mitchell, N., McNeill, D. & Jubadi, W. M., Jun 2019.

Research output: Contribution to conferencePaper

2018

Electrical characterisation of PVD germanium resistors with rapid melt growth (RMG) process

Zainal, N., Mitchell, S. J. N. & McNeill, D. W., 12 Nov 2018, AIP Conference Proceedings. 1 ed. AIP Publishing, Vol. 2030. 7 p. 020109. (AIP Conference Proceedings; vol. 2030).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Open Access
File
resistors
germanium
rails
crucibles
electrical measurement
2017
3 Citations (Scopus)

Comparison between Scotch tape and gel-assisted mechanical exfoliation techniques for preparation of 2D transition metal dichalcogenide flakes

Budania, P., Baine, P. T., Montgomery, J. H., McNeill, D. W., Mitchell, S. J. N., Modreanu, M. & Hurley, P. K., 01 Dec 2017, In : Micro and Nano Letters. 12, 12, p. 970-973 4 p.

Research output: Contribution to journalArticle

flakes
Tapes
tapes
Transition metals
Gels
2 Citations (Scopus)

Effect of post-exfoliation treatments on mechanically exfoliated MoS2

Budania, P., Baine, P. T., Montgomery, J. H., McNeill, D. W., Mitchell, S. J. N., Modreanu, M. & Hurley, P. K., 22 Feb 2017, In : Materials Research Express. 4, 2, 025022.

Research output: Contribution to journalArticle

Annealing
Substrates
Ultrasonics
Adhesion
Sonication
1 Citation (Scopus)
Open Access
File
Hafnium
Crucibles
Germanium
Silicon
Substrates
5 Citations (Scopus)

Long-term stability of mechanically exfoliated MoS2 flakes

Budania, P., McNeill, D., Mitchell, N., Modreanu, M. & Hurley, P., 2017.

Research output: Contribution to conferencePaper

Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate

Tan, T. H., Mitchell, S. J. N., McNeill, D. W., Wadsworth, H., Strahan, S. & Bailie, I., 30 Mar 2017, International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings. IEEE , p. 189-193 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Open Access
File
nanowires
silicon
augmentation
pressure sensors
microelectromechanical systems
2016

Effect of Post-Exfoliation Treatments on Mechanically Exfoliated MoS2

Budania, P., Mitchell, N. & McNeill, D., 27 May 2016.

Research output: Contribution to conferencePaper

Post-exfoliation annealing and ultrasonic treatment on mechanically exfoliated MoS2

Budania, P., Mitchell, N. & McNeill, D., Jun 2016.

Research output: Contribution to conferencePaper

2015

High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces

Chauhan, L., Gajula, D. R., McNeill, D. & Hughes, G., 01 Nov 2015, In : Microelectronic Engineering. 147, p. 249-253 5 p.

Research output: Contribution to journalArticle

Sulfur
Oxides
Thermodynamic stability
thermal stability
sulfur
2014
6 Citations (Scopus)

Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. & McNeill, D. W., 06 Jan 2014, In : Applied Physics Letters. 104, 1, 012102.

Research output: Contribution to journalArticle

germanium
aluminum
contact resistance
diodes
atomic layer epitaxy
1 Citation (Scopus)

High-temperature stability study of 1 nm Al2O3 deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy

Chellappan, R. K., Gajula, D. R., McNeill, D. & Hughes, G., 03 Jan 2014, In : Journal of Physics D: Applied Physics. 47, 5, 055107.

Research output: Contribution to journalArticle

Photoelectron spectroscopy
Synchrotron radiation
Oxides
synchrotron radiation
photoelectric emission
2 Citations (Scopus)
Photoemission
Synchrotron radiation
Thermodynamic stability
Sulfur
Oxides
4 Citations (Scopus)

High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photo emission

Chellappan, R. K., Gajula, D. R., McNeill, D. & Hughes, G., 15 Feb 2014, In : Applied Surface Science. 292, p. 345-349 5 p.

Research output: Contribution to journalArticle

Core levels
Synchrotron radiation
Sulfur Acids
Thermodynamic stability
Hydrofluoric Acid
2013

A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup

Tan, T. H., Mitchell, N., McNeill, D., Wadsworth, H. & Strahan, S., 2013. 5 p.

Research output: Contribution to conferencePaper

silicon
resistors
crystals
simulation
2012
2 Citations (Scopus)

Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator

Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M., Baine, P., Adley, D. & Perova, T. S., Apr 2012, In : ECS Transactions. 45, p. 169-180 12 p.

Research output: Contribution to journalArticle

Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs

Murad, S., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Armstrong, M. & Modreanu, M., Apr 2012, In : ECS Transactions. 45, 3, p. 137-144 8 p.

Research output: Contribution to journalArticle

Evaluation of the piezoresistance properties of p-type silicon

Tan, T., McNeill, D., Baine, P., Montgomery, J., Mitchell, N., Wadsworth, H., Strahan, S. & Bailie, I., 09 Sep 2012.

Research output: Contribution to conferencePoster

Silicon
Doping (additives)
Resistors
Fabrication
Substrates

Investigation of crystalline quality and stress in germanium stripes fabricated by rapid melt growth process

Perova, T. S., Zainal, N., Adley, D., Mitchell, N., McNeill, D., Bain, M., Armstrong, M. & Baine, P., Jul 2012.

Research output: Contribution to conferencePaper

6 Citations (Scopus)

Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples

Wasyluk, J., Rainey, P. V., Perova, T. S., Mitchell, N., McNeill, D., Gamble, H., Armstrong, M. & Hurley, R., Mar 2012, In : Journal of Raman Spectroscopy. 43, 3, p. 448-454 7 p.

Research output: Contribution to journalArticle

28 Citations (Scopus)

Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

Murad, S. N. A., Baine, P. T., McNeill, D. W., Mitchell, N., Armstrong, B. M., Modreanu, M., Hughes, G. & Chellappan, R. K., Dec 2012, In : SOLID-STATE ELECTRONICS. 78, p. 136-140 5 p.

Research output: Contribution to journalArticle

2011
1 Citation (Scopus)

Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs

Gajula, D. R., McNeill, D., Baine, P., Fleming, P., Duffy, R. & Armstrong, B. M., May 2011, In : ECS Transactions. 35, 3, p. 521-527 7 p.

Research output: Contribution to journalArticle

Rapid thermal annealing
Germanium
Nickel
Fabrication
Temperature

Germanium Processing

Gamble, H., Armstrong, M., Baine, P., Low, Y. H., Rainey, P. V., Mitchell, N. & McNeill, D., Feb 2011, Semiconductor-On-Insulator Materials for Nanoelectronics Applications. Nazarov, C., Balestra, Raskin, Gamiz & Lysenko (eds.). Springer, p. 3-29 27 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

High quality thin-film Ge on insulator by Rapid Melt Growth

Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M., Baine, P., Adley, D. & Perova, T., Jul 2011, p. 1-1. 1 p.

Research output: Contribution to conferencePaper

Investigation of crystalline quality and stress in Germanium-On-Insulator layers

Litvin, A., Adley, D., Perova, T. S., Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M. & Baine, P., Aug 2011, p. 62-62. 1 p.

Research output: Contribution to conferencePaper

4 Citations (Scopus)

Investigation of germanium implanted with hydrogen for layer transfer applications

Perova, T. S., Armstrong, M., Wasyluk, J., Baine, P., Rainey, P., Mitchell, N., McNeill, D., Gamble, H. & Hurley, R., Aug 2011, In : Solid State Phenomena. 178-179, p. 295-300 6 p.

Research output: Contribution to journalArticle

Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

Murad, S., McNeill, D., Mitchell, N., Armstrong, M., Modreanu, M., Hughes, G. & Chellappan, R. K., Dec 2011. 2 p.

Research output: Contribution to conferencePaper

2010
1 Citation (Scopus)

(Invited) Germanium on Sapphire Technology

Gamble, H., Baine, P. B., Low, Y. H., Rainey, P. V., Montgomery, J. H., Bain, M. F., Armstrong, B. M., McNeill, D. W. & Mitchell, N. S., Nov 2010, In : ECS Transactions. 33, 11, p. 37-50 14 p.

Research output: Contribution to journalArticle

Germanium
Sapphire
Substrates
Wafer bonding
Silicon
2 Citations (Scopus)

Application of atmospheric plasma for low temperature wafer bonding

Low, Y. W., Rainey, P., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 385-393 9 p.

Research output: Contribution to journalArticle

Atmospheric-pressure plasma activation for low temperature bonding

Low, Y. W., Rainey, P., Baine, P., Montgomery, J., Mitchell, N., McNeill, D., Gamble, H. & Armstrong, M., Oct 2010, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Carrier mobility variations in self-aligned germanium MOS transistors

Low, Y., Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Apr 2010, In : ECS Transactions. 28(1), p. 43-49 7 p.

Research output: Contribution to journalArticle

Circular geometry transistors fabricated on germanium-on-alumina bonded substrates

Baine, P., Low, Y., Rainey, P., Gamble, H., Armstrong, M., Mitchell, N. & McNeill, D., Oct 2010, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Dopant Transport in Tungsten Silicide Buried Layers for Application in SSOI

Armstrong, M., Baine, P., Montgomery, J., McNeill, D., Gamble, H. & Bain, M., Apr 2010, In : ECS Transactions. 28(1), p. 331-341 11 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Electrical characterization of ALD Al2O3 and HfO2 films on germanium

Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., 2010, In : ECS Transactions. 28, 1, p. 201-207 7 p.

Research output: Contribution to journalArticle

Atomic layer deposition
Germanium
Capacitors
Degradation
MOS capacitors
1 Citation (Scopus)

Germanium on Sapphire Technology

Gamble, H., Baine, P., Low, Y., Rainey, P., Montgomery, J., Armstrong, M., McNeill, D. & Mitchell, N., Nov 2010, In : ECS Transactions. 33(11), p. 37-50 14 p.

Research output: Contribution to journalArticle

Hydrogen and helium implantation in germanium for semiconductor layer transfer applications

Hurley, R., Rainey, P., Low, Y. W., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Jun 2010, p. 56-56. 1 p.

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Hydrogen implantation in germanium

Low, Y. W., Rainey, P., Hurley, R., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 375-383 9 p.

Research output: Contribution to journalArticle

Raman mapping analysis of structural damage in ion implanted bevelled Ge samples with application in smart cut technology

Wasyluk, J., Rainey, P., Perova, T. S., Hurley, R., Mitchell, N., McNeill, D., Gamble, H. & Armstrong, M., Aug 2010, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Surface activation treatment using atmospheric pressure plasma for low temeprature direct wafer bonding

Low, Y. W., Gamble, H., Armstrong, M., Rainey, P., Baine, P., Montgomery, J., Mitchell, N. & McNeill, D., Jun 2010, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

2009

Carrier mobility variations in self-aligned germanium MOS transistors

Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Dopant transport in tungsten silicide layers for application in SOI technology

Liao, S., Bain, M., Baine, P., Montgomery, J., McNeill, D., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Electrical characterisation of ALD Al2O3 and HfO2 films on germanium

Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Electronic characterisation of Ge MOSTs measured at low temperature

McNeill, D., Low, Y., Tantraviwat, D., Rainey, P., Baine, P., Mitchell, N., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Germanium MOS transistors on sapphire and alumina platforms

Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y., Low, Y. W. & Tantraviwat, D., Oct 2009, p. 59-60. 2 p.

Research output: Contribution to conferencePaper

Hydrogen and helium implantation in germanium for layer transfer applications

Rainey, P., Low, Y. W., Hurley, R., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Dec 2009, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Low temperature measurement of TFTs fabricated on germanium-on-sapphire substrates

Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y., Low, Y. W. & Tantraviwat, D., Sep 2009, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Low temperature processes for manufacture of germanium MOS transistors

Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y., Low, Y. W. & Tantraviwat, D., Jan 2009, p. 143-144. 2 p.

Research output: Contribution to conferencePaper

Optimisation of tungsten disilicide dopant diffusion conduits for SSOI applications

Liao, S., Bain, M., Baine, P., McNeill, D., Armstrong, M. & Gamble, H., Jan 2009, p. 83-84. 2 p.

Research output: Contribution to conferencePaper

The effect of atmospheric oxygen plasma on buried oxide layer for low temeprature wafer bonding

Low, Y. W., Rainey, P., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Dec 2009, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

2008
15 Citations (Scopus)

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

McNeill, D., Bhattacharya, S., Wadsworth, H., Ruddell, F., Mitchell, N., Armstrong, M. & Gamble, H., Feb 2008, In : Journal of Materials Science: Materials in Electronics. 19, 2, p. 119-123 5 p.

Research output: Contribution to journalArticle

Hafnium oxides
Germanium
hafnium oxides
Atomic layer deposition
Silicon