• Room 07.012 - Ashby Tower

    United Kingdom

1987 …2020

Research output per year

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Research Output

1987

Rapid thermal processing of polysilicon emitter bipolar transistors in a combined CMOS/bipolar process

Grant, L. A., McNeill, D. & Blomley, P. F., Sep 1987, p. 207-209. 3 p.

Research output: Contribution to conferencePaper

1990

Growth of wide band gap polycrystalline semi-insulating polycrystalline silicon

Sands, D., Brunson, K. M., Spink, D. M., Thomas, C. B., McNeill, D., McDonald, A. A., Jennings, S. & Rosser, P. J., Feb 1990, In : Journal of Vacuum Science & Technology B (microelectronics Processing & Phenomena). 8(1), p. 16-20 5 p.

Research output: Contribution to journalArticle

Silicon carbide layers produced by rapid thermal CVD

Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Oct 1990, p. 159-170. 12 p.

Research output: Contribution to conferencePaper

The application of limited reaction processing to the deposition of silicon carbide layers

Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Sep 1990, p. 357-360. 4 p.

Research output: Contribution to conferencePaper

1991

Epitaxial silicon growth by rapid thermal CVD

McNeill, D., Liang, Y., Montgomery, J., Gamble, H. & Armstrong, M., Sep 1991, In : Journal De Physique Iv. 1(C2), p. 779-786 8 p.

Research output: Contribution to journalArticle

Low temperature epitaxial silicon growth in a rapid thermal processor

McNeill, D., Gamble, H. & Armstrong, M., May 1991, p. 235-240. 6 p.

Research output: Contribution to conferencePaper

Rapid thermal epitaxial growth for static induction thyristors

Ye, L., McNeill, D., Montgomery, J., Raza, S. H., Armstrong, M. & Gamble, H., Sep 1991, p. O-025-O-029. 5 p.

Research output: Contribution to conferencePaper

1992
1 Citation (Scopus)
1993

Growth of multi-layer Si/Si1-xGex structures using rapid thermal chemical vapour deposition

McNeill, D., Armstrong, M. & Gamble, H., Dec 1993, p. 187-192. 6 p.

Research output: Contribution to conferencePaper

1996

The effects of deposition conditions on micro-structure in polycrystalline silicon-germanium thin films: fractal characterisation using scanning probe microscopy

Campbell, P. A., Walmsley, D. G., Gay, D. L., Chong, R. L. F., Gamble, H. & McNeill, D., Dec 1996, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

1997

BESOI using a silicon germanium etch stop

Li, X., Gay, D. L., McNeill, D., Armstrong, M. & Gamble, H., Sep 1997, p. 313-320. 8 p.

Research output: Contribution to conferencePaper

Comparison of Si1-yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition

Ray, S. K., McNeill, D., Gay, D. L., Maiti, C. K., Armstrong, A., Armstrong, M. & Gamble, H., Feb 1997, In : Thin Solid Films. 294(1-2), p. 149-152 4 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Single crystal silicon on glass substrates

Baine, P., Gay, D. L., Quinn, L. J., Lee, B., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., Apr 1997, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

1998

Contrasting damage characteristics in direct incidence and surface plasmon mediated single-shot laser ablation of aluminium films

McNeill, DA., Morrow, T. & Dawson, P., May 1998, In : Applied Surface Science. 127, p. 46-52 7 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Electromigration in copper interconnects

McCusker, N., Len, V. S. C., McNeill, D., Armstrong, M. & Gamble, H., Jun 1998, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications

McNeill, D., Gay, D. L., Li, X., Armstrong, M. & Gamble, H., Apr 1998, p. 307-313. 7 p.

Research output: Contribution to conferencePaper

The effect of germane variation on microstructure in polycrystalline Si/SiGe thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy

Campbell, P. A., Walmsley, D. G., Chong, R. L. F., Gay, D. L., Gamble, H. & McNeill, D., Mar 1998, In : Applied Physics A - Materials Science & Processing. 66(1-2), p. S1067-S1071 5 p.

Research output: Contribution to journalArticle

1999

An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

Len, V. S. C., Hurley, R., McCusker, N., McNeill, D., Armstrong, M. & Gamble, H., Jun 1999, In : Solid State Electronics. 43(6), p. 1045-1049 5 p.

Research output: Contribution to journalArticle

27 Citations (Scopus)

Application of surface plasmon polaritons in the laser ablation and characterisation of thin aluminium films

Cairns, GF., McNeill, DA. & Dawson, P., 10 Jun 1999, In : Surface Science. 429, 1-3, p. 117-126 10 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers

Uppal, S., Gay, D. L., Armstrong, A., McNeill, D., Baine, P., Armstrong, M., Gamble, H. & Yallup, K., May 1999, p. 219-224. 6 p.

Research output: Contribution to conferencePaper

Investigation of p-type contamination in thin SOI layers during fabrication

Uppal, S., Gay, D. L., Armstrong, A., McNeill, D., Baine, P., Armstrong, M., Gamble, H. & Yallop, K., Apr 1999, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

2000

A comparative study into surface electromigration of sputtered copper patterned using lift-off and CMP

McCusker, N. D., Len, V. S. C., Toh, B. H. W., McNeill, D. & Gamble, H., Oct 2000, p. 93-96. 4 p.

Research output: Contribution to conferencePaper

An evaluation of the effects of benzotriazole in NH4OH slurry for copper CMP

Len, V. S. C., McNeill, D. & Gamble, H., Apr 2000, p. E7.4.1-E7.4.6. 6 p.

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Characterisation of copper CVD films deposited using a Cu(I)(hfac)TMVS precursor

Toh, B. H. W., Len, V. S. C., McNeill, D. & Gamble, H., Dec 2000, p. 253-256. 4 p.

Research output: Contribution to conferencePaper

Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing

Len, V. S. C., Toh, B. H. W., McNeill, D. & Gamble, H., Oct 2000, p. 243-246. 4 p.

Research output: Contribution to conferencePaper

Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide

Bera, L. K., Choi, W. K., McNeill, D., Ray, S. K., Chatterjee, S. & Maiti, C. K., Nov 2000, p. H5.14.1-H5.14.6. 6 p.

Research output: Contribution to conferencePaper

Ultra-thin BESOI fabrication techniques

Bhattacharya, S., Suder, S., Baine, P., McNeill, D., Uppal, S., Armstrong, A., Armstrong, M. & Gamble, H., Dec 2000, p. 227-230. 4 p.

Research output: Contribution to conferencePaper

2001

Effects of copper grain structure on electromigration behaviour

Toh, B. H. W., McNeill, D. & Gamble, H., Sep 2001, p. 39-42. 4 p.

Research output: Contribution to conferencePaper

Fabrication of SOI substrates with buried tungsten silicide layer by smart-cut technique

Suder, S., Hurley, R., Bain, M., Baine, P., McNeill, D., Armstrong, M. & Gamble, H., Sep 2001, p. 279-282. 4 p.

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Silicon-on-insulator substrates with buried tungsten silicide layer

Gamble, H., Armstrong, M., Baine, P., Bain, M. & McNeill, D., Oct 2001.

Research output: Contribution to conferencePaper

20 Citations (Scopus)

Silicon-on-insulator substrates with buried tungsten silicide layer

Gamble, H., Armstrong, M., Baine, P., Bain, M. & McNeill, D., Apr 2001, In : Solid State Electronics. 45(4), 4, p. 551-557 7 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Surface electromigration of sputtered copper patterned using ion milling or chemical mechanical polishing

Toh, B. W. H., McCusker, N. D., McNeill, D., Gamble, H. & Len, V. S. C., Jun 2001, In : Journal of Materials Science: Materials in Electronics. 12(4-6), 4-6, p. 307-312 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)
2003

Manufacture processes for GPSOI substrates and their influence on cross-talk suppression

Baine, P., Gamble, H., Armstrong, M., McNeill, D., Bain, M., Hamel, J. S. & Kraft, M., Apr 2003, p. 57-63. 7 p.

Research output: Contribution to conferencePaper

Manufacturing processes for WSi2-GPSOI substrates and their influence on cross-talk suppression and inductance

Baine, P., Gamble, H., Armstrong, M., Bain, M., McNeill, D., Hamel, J., Stefanos, S. & Kraft, M., Apr 2003.

Research output: Contribution to conferencePaper

Manufacturing processes for WSi2-GPSOI substrates and their influence on cross-talk suppression and inductance

Armstrong, M., Bain, M., Baine, P., Gamble, H. & McNeill, D., Sep 2003. 7 p.

Research output: Contribution to conferencePaper

2004

Characterisation of copper inductors fabricated on low-k SOG dielectric layers and low resistivity silicon wafers by electroplating techniques

Toh, B. H. W., Bien, D., McNeill, D. & Gamble, H., Sep 2004, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Comparison of induced stresses due to electroless versus sputtered copper interconnect technology

McNally, P. J., Kanatharana, J., Toh, B. H. W., McNeill, D., Tuomi, T., Danilewsky, A. N., Knuuttila, L., Riikonen, J. & Toivonen, J., Nov 2004, In : Semiconductor Science and Technology. 19(11), 11, p. 1280-1284 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Electrical characterisation of SOI substrates incorporating WSix ground planes

Armstrong, M., Bain, M., Baine, P., Gamble, H. & McNeill, D., Apr 2004, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

McNally, P. J., Kanatharana, J., Toh, B. H. W., McNeill, D., Danilewsky, A. N., Tuomi, T., Knuuttila, L., Riikonen, J., Toivonen, J. & Simon, R., 15 Dec 2004, In : Journal of Applied Physics. 96(12), 12, p. 7596-7602 7 p., 7.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI)

Armstrong, M., Bain, M., Baine, P., Gamble, H., McNeill, D. & Montgomery, J., Apr 2004, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

Srinivasan, G., Bain, M., Bhattacharya, S., Baine, P., Armstrong, M., Gamble, H. & McNeill, D., Dec 2004, In : Materials Science and Engineering B. 114-115, SPEC. ISS., p. 223-227 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)
2005

Characterisation of copper inductors fabricated by dual damascene and electroplating techniques

Toh, B. H. W., McNeill, D. & Gamble, H., Apr 2005, In : Journal of Materials Science: Materials in Electronics. 16(4), 4, p. 233-238 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Cross-talk suppression in SOI substrates

Armstrong, M., Bain, M., Baine, P., Gamble, H., McNeill, D. & Montgomery, J., Jan 2005, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

9 Citations (Scopus)

Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes

Bain, M., Jin, M., Loh, S., Armstrong, M., Gamble, H. & McNeill, D., Feb 2005, In : IEEE Electron Device Letters. 26, 2, p. 72-74 3 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Fabrication and characterisation of silicon on insulator substrates incorporating thermal vias

Bain, M., Baine, P., McNeill, D., Srinivasan, G., Jankovic, N., McCartney, J., Moore, R. A., Armstrong, M. & Gamble, H., Apr 2005, p. 103-108. 6 p.

Research output: Contribution to conferencePaper

Investigation of copper layers deposited by CVD using Cu(I)hfac(TMVS) precursor

Toh, B. H. W., McNeill, D. & Gamble, H., Jul 2005, In : Journal of Materials Science: Materials in Electronics. 16(7), 7, p. 437-443 7 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Silicon-on-insulator substrates with buried ground, planes (GPSOI)

Bain, M., Stefanos, S., Baine, P., Loh, S. H., Jin, L., Montgomery, J., Armstrong, M., Gamble, H., Hamel, J., McNeill, D., Kraft, A. & Kemhadjian, H., Apr 2005, p. 273-278. 6 p.

Research output: Contribution to conferencePaper

2006

Buried Dielectrics for GeOI

Armstrong, M., Ruddell, F., Wadsworth, H., Gamble, H. & McNeill, D., Mar 2006, p. 43-44. 2 p.

Research output: Contribution to conferencePaper

Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration

Armstrong, M., Baine, P., Gamble, H., McNeill, D. & Suder, S., Oct 2006, p. 531-537. 7 p.

Research output: Contribution to conferencePaper