• Room 07.012 - Ashby Tower

    United Kingdom

1987 …2020

Research output per year

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Research Output

1998

The effect of germane variation on microstructure in polycrystalline Si/SiGe thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy

Campbell, P. A., Walmsley, D. G., Chong, R. L. F., Gay, D. L., Gamble, H. & McNeill, D., Mar 1998, In : Applied Physics A - Materials Science & Processing. 66(1-2), p. S1067-S1071 5 p.

Research output: Contribution to journalArticle

1997

BESOI using a silicon germanium etch stop

Li, X., Gay, D. L., McNeill, D., Armstrong, M. & Gamble, H., Sep 1997, p. 313-320. 8 p.

Research output: Contribution to conferencePaper

Comparison of Si1-yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition

Ray, S. K., McNeill, D., Gay, D. L., Maiti, C. K., Armstrong, A., Armstrong, M. & Gamble, H., Feb 1997, In : Thin Solid Films. 294(1-2), p. 149-152 4 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Single crystal silicon on glass substrates

Baine, P., Gay, D. L., Quinn, L. J., Lee, B., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., Apr 1997, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

1996

The effects of deposition conditions on micro-structure in polycrystalline silicon-germanium thin films: fractal characterisation using scanning probe microscopy

Campbell, P. A., Walmsley, D. G., Gay, D. L., Chong, R. L. F., Gamble, H. & McNeill, D., Dec 1996, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

1993

Growth of multi-layer Si/Si1-xGex structures using rapid thermal chemical vapour deposition

McNeill, D., Armstrong, M. & Gamble, H., Dec 1993, p. 187-192. 6 p.

Research output: Contribution to conferencePaper

1992
1 Citation (Scopus)
1991

Epitaxial silicon growth by rapid thermal CVD

McNeill, D., Liang, Y., Montgomery, J., Gamble, H. & Armstrong, M., Sep 1991, In : Journal De Physique Iv. 1(C2), p. 779-786 8 p.

Research output: Contribution to journalArticle

Low temperature epitaxial silicon growth in a rapid thermal processor

McNeill, D., Gamble, H. & Armstrong, M., May 1991, p. 235-240. 6 p.

Research output: Contribution to conferencePaper

Rapid thermal epitaxial growth for static induction thyristors

Ye, L., McNeill, D., Montgomery, J., Raza, S. H., Armstrong, M. & Gamble, H., Sep 1991, p. O-025-O-029. 5 p.

Research output: Contribution to conferencePaper

1990

Growth of wide band gap polycrystalline semi-insulating polycrystalline silicon

Sands, D., Brunson, K. M., Spink, D. M., Thomas, C. B., McNeill, D., McDonald, A. A., Jennings, S. & Rosser, P. J., Feb 1990, In : Journal of Vacuum Science & Technology B (microelectronics Processing & Phenomena). 8(1), p. 16-20 5 p.

Research output: Contribution to journalArticle

Silicon carbide layers produced by rapid thermal CVD

Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Oct 1990, p. 159-170. 12 p.

Research output: Contribution to conferencePaper

The application of limited reaction processing to the deposition of silicon carbide layers

Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Sep 1990, p. 357-360. 4 p.

Research output: Contribution to conferencePaper

1987

Rapid thermal processing of polysilicon emitter bipolar transistors in a combined CMOS/bipolar process

Grant, L. A., McNeill, D. & Blomley, P. F., Sep 1987, p. 207-209. 3 p.

Research output: Contribution to conferencePaper