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    United Kingdom

1987 …2020

Research output per year

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Research Output

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Article
2020

Development of photodiode via the rapid melt growth (RMG) materials for energy conversion device

Zainal, N., Mitchell, N., McNeill, D. & Jubadi, W. M., Jun 2020, In : Indonesian Journal of Electrical Engineering and Computer Science. 18, 3, p. 1188-1198 11 p.

Research output: Contribution to journalArticle

Open Access
File
51 Downloads (Pure)
2017

Comparison between Scotch tape and gel-assisted mechanical exfoliation techniques for preparation of 2D transition metal dichalcogenide flakes

Budania, P., Baine, P. T., Montgomery, J. H., McNeill, D. W., Mitchell, S. J. N., Modreanu, M. & Hurley, P. K., 01 Dec 2017, In : Micro and Nano Letters. 12, 12, p. 970-973 4 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Effect of post-exfoliation treatments on mechanically exfoliated MoS2

Budania, P., Baine, P. T., Montgomery, J. H., McNeill, D. W., Mitchell, S. J. N., Modreanu, M. & Hurley, P. K., 22 Feb 2017, In : Materials Research Express. 4, 2, 025022.

Research output: Contribution to journalArticle

3 Citations (Scopus)
Open Access
File
1 Citation (Scopus)
70 Downloads (Pure)
2015

High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces

Chauhan, L., Gajula, D. R., McNeill, D. & Hughes, G., 01 Nov 2015, In : Microelectronic Engineering. 147, p. 249-253 5 p.

Research output: Contribution to journalArticle

2014

Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. & McNeill, D. W., 06 Jan 2014, In : Applied Physics Letters. 104, 1, 012102.

Research output: Contribution to journalArticle

7 Citations (Scopus)

High-temperature stability study of 1 nm Al2O3 deposited on InAs surfaces investigated by synchrotron radiation based photoemission spectroscopy

Chellappan, R. K., Gajula, D. R., McNeill, D. & Hughes, G., 03 Jan 2014, In : Journal of Physics D: Applied Physics. 47, 5, 055107.

Research output: Contribution to journalArticle

1 Citation (Scopus)
3 Citations (Scopus)

High temperature thermal stability of the HfO2/Ge (100) interface as a function of surface preparation studied by synchrotron radiation core level photo emission

Chellappan, R. K., Gajula, D. R., McNeill, D. & Hughes, G., 15 Feb 2014, In : Applied Surface Science. 292, p. 345-349 5 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)
2012

Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator

Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M., Baine, P., Adley, D. & Perova, T. S., Apr 2012, In : ECS Transactions. 45, p. 169-180 12 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs

Murad, S., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Armstrong, M. & Modreanu, M., Apr 2012, In : ECS Transactions. 45, 3, p. 137-144 8 p.

Research output: Contribution to journalArticle

Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples

Wasyluk, J., Rainey, P. V., Perova, T. S., Mitchell, N., McNeill, D., Gamble, H., Armstrong, M. & Hurley, R., Mar 2012, In : Journal of Raman Spectroscopy. 43, 3, p. 448-454 7 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

Murad, S. N. A., Baine, P. T., McNeill, D. W., Mitchell, N., Armstrong, B. M., Modreanu, M., Hughes, G. & Chellappan, R. K., Dec 2012, In : SOLID-STATE ELECTRONICS. 78, p. 136-140 5 p.

Research output: Contribution to journalArticle

29 Citations (Scopus)
2011

Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs

Gajula, D. R., McNeill, D., Baine, P., Fleming, P., Duffy, R. & Armstrong, B. M., May 2011, In : ECS Transactions. 35, 3, p. 521-527 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Investigation of germanium implanted with hydrogen for layer transfer applications

Perova, T. S., Armstrong, M., Wasyluk, J., Baine, P., Rainey, P., Mitchell, N., McNeill, D., Gamble, H. & Hurley, R., Aug 2011, In : Solid State Phenomena. 178-179, p. 295-300 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)
2010

(Invited) Germanium on Sapphire Technology

Gamble, H., Baine, P. B., Low, Y. H., Rainey, P. V., Montgomery, J. H., Bain, M. F., Armstrong, B. M., McNeill, D. W. & Mitchell, N. S., Nov 2010, In : ECS Transactions. 33, 11, p. 37-50 14 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Application of atmospheric plasma for low temperature wafer bonding

Low, Y. W., Rainey, P., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 385-393 9 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Carrier mobility variations in self-aligned germanium MOS transistors

Low, Y., Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Apr 2010, In : ECS Transactions. 28(1), p. 43-49 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Dopant Transport in Tungsten Silicide Buried Layers for Application in SSOI

Armstrong, M., Baine, P., Montgomery, J., McNeill, D., Gamble, H. & Bain, M., Apr 2010, In : ECS Transactions. 28(1), p. 331-341 11 p.

Research output: Contribution to journalArticle

Electrical characterization of ALD Al2O3 and HfO2 films on germanium

Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., 2010, In : ECS Transactions. 28, 1, p. 201-207 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Germanium on Sapphire Technology

Gamble, H., Baine, P., Low, Y., Rainey, P., Montgomery, J., Armstrong, M., McNeill, D. & Mitchell, N., Nov 2010, In : ECS Transactions. 33(11), p. 37-50 14 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Hydrogen implantation in germanium

Low, Y. W., Rainey, P., Hurley, R., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 375-383 9 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2008

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

McNeill, D., Bhattacharya, S., Wadsworth, H., Ruddell, F., Mitchell, N., Armstrong, M. & Gamble, H., Feb 2008, In : Journal of Materials Science: Materials in Electronics. 19, 2, p. 119-123 5 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Germanium bonding to AI2O3

Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y. & Bain, M., 2008, In : ECS Transactions. 16, 8, p. 407-414 8 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Germanium on sapphire

Gamble, H., Baine, P., Wadsworth, H., Low, Y., Rainey, P., Ruddell, F., Armstrong, M., McNeill, D. & Mitchell, N., Dec 2008, In : International Journal of High Speed Electronics and Systems. 18, 4, p. 805-814 10 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
25 Downloads (Pure)

Germanium on Sapphire By Wafer Bonding

Baine, P., Gamble, H., Armstrong, M., McNeill, D., Mitchell, N., Low, Y. & Rainey, P., Dec 2008, In : Solid State Electronics. 52, 12, p. 1840-1844 5 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)
6 Downloads (Pure)
2006

Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

Wadsworth, H., Bhattacharya, S., McNeill, D., Ruddell, F., Armstrong, M., Gamble, H. & Denvir, D., Aug 2006, In : Materials Science in Semiconductor Processing. 9, 4-5 SPEC. ISS., p. 685-689 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Low Temperature Bonding of PECVD Silicon Dioxide Layers

Baine, P., Bain, M., McNeill, D., Gamble, H. & Armstrong, M., Nov 2006, In : ECS Transactions. 3(6), 6, p. 165-173 9 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Low temperature surface nitridation processes for dielectric-Ge interfaces

Wadsworth, H. J., Bhattacharya, S., Ruddell, F. H., McNeill, D. W., Mitchell, N., Armstrong, B. M., Gamble, H. S. & Denvir, D., 01 Jan 2006, In : ECS Transactions. 3, 7, p. 531-537 7 p.

Research output: Contribution to journalArticle

2005

Characterisation of copper inductors fabricated by dual damascene and electroplating techniques

Toh, B. H. W., McNeill, D. & Gamble, H., Apr 2005, In : Journal of Materials Science: Materials in Electronics. 16(4), 4, p. 233-238 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes

Bain, M., Jin, M., Loh, S., Armstrong, M., Gamble, H. & McNeill, D., Feb 2005, In : IEEE Electron Device Letters. 26, 2, p. 72-74 3 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Investigation of copper layers deposited by CVD using Cu(I)hfac(TMVS) precursor

Toh, B. H. W., McNeill, D. & Gamble, H., Jul 2005, In : Journal of Materials Science: Materials in Electronics. 16(7), 7, p. 437-443 7 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)
2004

Comparison of induced stresses due to electroless versus sputtered copper interconnect technology

McNally, P. J., Kanatharana, J., Toh, B. H. W., McNeill, D., Tuomi, T., Danilewsky, A. N., Knuuttila, L., Riikonen, J. & Toivonen, J., Nov 2004, In : Semiconductor Science and Technology. 19(11), 11, p. 1280-1284 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

McNally, P. J., Kanatharana, J., Toh, B. H. W., McNeill, D., Danilewsky, A. N., Tuomi, T., Knuuttila, L., Riikonen, J., Toivonen, J. & Simon, R., 15 Dec 2004, In : Journal of Applied Physics. 96(12), 12, p. 7596-7602 7 p., 7.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

Srinivasan, G., Bain, M., Bhattacharya, S., Baine, P., Armstrong, M., Gamble, H. & McNeill, D., Dec 2004, In : Materials Science and Engineering B. 114-115, SPEC. ISS., p. 223-227 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)
2001

Silicon-on-insulator substrates with buried tungsten silicide layer

Gamble, H., Armstrong, M., Baine, P., Bain, M. & McNeill, D., Apr 2001, In : Solid State Electronics. 45(4), 4, p. 551-557 7 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Surface electromigration of sputtered copper patterned using ion milling or chemical mechanical polishing

Toh, B. W. H., McCusker, N. D., McNeill, D., Gamble, H. & Len, V. S. C., Jun 2001, In : Journal of Materials Science: Materials in Electronics. 12(4-6), 4-6, p. 307-312 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)
1999

An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

Len, V. S. C., Hurley, R., McCusker, N., McNeill, D., Armstrong, M. & Gamble, H., Jun 1999, In : Solid State Electronics. 43(6), p. 1045-1049 5 p.

Research output: Contribution to journalArticle

27 Citations (Scopus)

Application of surface plasmon polaritons in the laser ablation and characterisation of thin aluminium films

Cairns, GF., McNeill, DA. & Dawson, P., 10 Jun 1999, In : Surface Science. 429, 1-3, p. 117-126 10 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)
1998

Contrasting damage characteristics in direct incidence and surface plasmon mediated single-shot laser ablation of aluminium films

McNeill, DA., Morrow, T. & Dawson, P., May 1998, In : Applied Surface Science. 127, p. 46-52 7 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

The effect of germane variation on microstructure in polycrystalline Si/SiGe thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy

Campbell, P. A., Walmsley, D. G., Chong, R. L. F., Gay, D. L., Gamble, H. & McNeill, D., Mar 1998, In : Applied Physics A - Materials Science & Processing. 66(1-2), p. S1067-S1071 5 p.

Research output: Contribution to journalArticle

1997

Comparison of Si1-yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition

Ray, S. K., McNeill, D., Gay, D. L., Maiti, C. K., Armstrong, A., Armstrong, M. & Gamble, H., Feb 1997, In : Thin Solid Films. 294(1-2), p. 149-152 4 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)
1996
1992
1 Citation (Scopus)
1991

Epitaxial silicon growth by rapid thermal CVD

McNeill, D., Liang, Y., Montgomery, J., Gamble, H. & Armstrong, M., Sep 1991, In : Journal De Physique Iv. 1(C2), p. 779-786 8 p.

Research output: Contribution to journalArticle

1990

Growth of wide band gap polycrystalline semi-insulating polycrystalline silicon

Sands, D., Brunson, K. M., Spink, D. M., Thomas, C. B., McNeill, D., McDonald, A. A., Jennings, S. & Rosser, P. J., Feb 1990, In : Journal of Vacuum Science & Technology B (microelectronics Processing & Phenomena). 8(1), p. 16-20 5 p.

Research output: Contribution to journalArticle