Photo of Mervyn Armstrong
  • Room 08.006 - Ashby Tower

    United Kingdom

19902014

Research output per year

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Research Output

(Invited) Germanium on Sapphire Technology

Gamble, H., Baine, P. B., Low, Y. H., Rainey, P. V., Montgomery, J. H., Bain, M. F., Armstrong, B. M., McNeill, D. W. & Mitchell, N. S., Nov 2010, In : ECS Transactions. 33, 11, p. 37-50 14 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

Len, V. S. C., Hurley, R., McCusker, N., McNeill, D., Armstrong, M. & Gamble, H., Jun 1999, In : Solid State Electronics. 43(6), p. 1045-1049 5 p.

Research output: Contribution to journalArticle

27 Citations (Scopus)

Application of atmospheric plasma for low temperature wafer bonding

Low, Y. W., Rainey, P., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 385-393 9 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

A Radiation Study of High-Resistivity SOI Substrates for High Energy Physics Applications

Armstrong, M., Gamble, H., Ruddell, F., Suder, S. & Montgomery, J., Jan 2008, p. 1-2. 2 p.

Research output: Contribution to conferencePaper

Atmospheric-pressure plasma activation for low temperature bonding

Low, Y. W., Rainey, P., Baine, P., Montgomery, J., Mitchell, N., McNeill, D., Gamble, H. & Armstrong, M., Oct 2010, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

McNeill, D., Bhattacharya, S., Wadsworth, H., Ruddell, F., Mitchell, N., Armstrong, M. & Gamble, H., Feb 2008, In : Journal of Materials Science: Materials in Electronics. 19, 2, p. 119-123 5 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Back gate effects in N-channel monocrystalline silicon devices-on-glass and their suppression by boron ion implantation

Baine, P., Mitchell, N., Gamble, H. & Armstrong, M., Apr 1999, p. 369-374. 6 p.

Research output: Contribution to conferencePaper

BESOI using a silicon germanium etch stop

Li, X., Gay, D. L., McNeill, D., Armstrong, M. & Gamble, H., Sep 1997, p. 313-320. 8 p.

Research output: Contribution to conferencePaper

Buried Dielectrics for GeOI

Armstrong, M., Ruddell, F., Wadsworth, H., Gamble, H. & McNeill, D., Mar 2006, p. 43-44. 2 p.

Research output: Contribution to conferencePaper

Carrier mobility variations in self-aligned germanium MOS transistors

Low, Y., Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Apr 2010, In : ECS Transactions. 28(1), p. 43-49 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Carrier mobility variations in self-aligned germanium MOS transistors

Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers

Uppal, S., Gay, D. L., Armstrong, A., McNeill, D., Baine, P., Armstrong, M., Gamble, H. & Yallup, K., May 1999, p. 219-224. 6 p.

Research output: Contribution to conferencePaper

Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs

Gajula, D. R., McNeill, D., Baine, P., Fleming, P., Duffy, R. & Armstrong, B. M., May 2011, In : ECS Transactions. 35, 3, p. 521-527 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator

Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M., Baine, P., Adley, D. & Perova, T. S., Apr 2012, In : ECS Transactions. 45, p. 169-180 12 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Circular geometry MOS transistor analysis of SOI substrates for high energy physics particle detectors

Armstrong, M., Gamble, H., Ruddell, F., Montgomery, J., Suder, S., Casse, G., Bowcock, T. & Allport, P. P., Mar 2008, p. 101-104. 4 p.

Research output: Contribution to conferencePaper

Circular geometry transistors fabricated on germanium-on-alumina bonded substrates

Baine, P., Low, Y., Rainey, P., Gamble, H., Armstrong, M., Mitchell, N. & McNeill, D., Oct 2010, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Comparison of Si1-yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition

Ray, S. K., McNeill, D., Gay, D. L., Maiti, C. K., Armstrong, A., Armstrong, M. & Gamble, H., Feb 1997, In : Thin Solid Films. 294(1-2), p. 149-152 4 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Composition and stress analysis in Si/SiGe structures

Armstrong, M. & Gamble, H., Sep 2004, p. 226-230. 5 p.

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Composition and stress analysis in Si structures using micro-raman spectroscopy

Armstrong, M. & Gamble, H., Sep 2004, In : Scanning. 25(5), 5, p. 235-239 5 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Composition and stress analysis in Si structures using micro-Raman spectroscopy

Armstrong, M. & Gamble, H., Apr 2004, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

12 Citations (Scopus)

Conduction mechanism in high-k ZrO2 gate dielectric films on strained-Ge layers

Armstrong, M. & Gamble, H., Dec 2003, p. 29-30. 2 p.

Research output: Contribution to conferencePaper

Conduit diffusion of dopants in tungsten silicide layers

Armstrong, M., Gamble, H., Bain, M., Baine, P. & McNeill, D., Mar 2008, p. 65-70. 6 p.

Research output: Contribution to conferencePaper

Control of Leakage Current in Polysilicon TFT´s by the Implantation of Boron

Quinn, L. J., Baine, P., Lee, B., Mitchell, N., Armstrong, M. & Gamble, H., Sep 1998, p. 588-591. 4 p.

Research output: Contribution to conferencePaper

Cross-talk suppression Faraday cage structure in silicon-on-insulator

Armstrong, M., Baine, P., Bain, M. & Gamble, H., Oct 2002, p. 18`-182. 1 p.

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Cross-talk suppression in SOI substrates

Armstrong, M., Bain, M., Baine, P., Gamble, H., McNeill, D. & Montgomery, J., Jan 2005, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

9 Citations (Scopus)

Cross-talk suppression in SOI substrates

Armstrong, M., Baine, P., Gamble, H. & Linton, D., Sep 2005, In : SOLID-STATE ELECTRONICS. 9, 9 SPEC. ISS., p. 1461-1465 5 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration

Armstrong, M., Baine, P., Gamble, H., McNeill, D. & Suder, S., Oct 2006, p. 531-537. 7 p.

Research output: Contribution to conferencePaper

Determination of band offsets in strained-Si heterolayers

Armstrong, M. & Gamble, H., Sep 2004, In : Thin Solis Films. 462-463, SPEC. ISS., p. 80-84 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Development of a Monolithic Active Pixel Sensor using SOI Technology with a Thick Device Layer

Armstrong, M., Gamble, H., Ruddell, F., Marczewski, J., Grabiec, P., Kucharski, K., Tomaszewski, D., Kucewicz, W., Kusiak, T., Sapor, M., Loster, B. W. & Majewski, S., Feb 2010, In : IEEE Transactions on Nuclear Science. 57, 1 PART 2, p. 381-386 6 p., 5410008.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer

Armstrong, M., Kucewicz, W., Grabiec, P., Kucharski, K., Marczewski, J., Niemec, H., Sapor, M., Tomaszewski, D. & Ruddell, F., Oct 2008, p. 1123-1125. 3 p.

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Dopant Transport in Tungsten Silicide Buried Layers for Application in SSOI

Armstrong, M., Baine, P., Montgomery, J., McNeill, D., Gamble, H. & Bain, M., Apr 2010, In : ECS Transactions. 28(1), p. 331-341 11 p.

Research output: Contribution to journalArticle

Dopant transport in tungsten silicide layers for application in SOI technology

Liao, S., Bain, M., Baine, P., Montgomery, J., McNeill, D., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Effect of deposition temperature on the formation of CoSi2 through the rapid thermal annealing of CVD cobalt

Armstrong, M., Bain, M. & Gamble, H., Oct 2004, In : Microelectronic Engineering. 76(1-4), 1-4, p. 336-342 7 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs

Murad, S., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Armstrong, M. & Modreanu, M., Apr 2012, In : ECS Transactions. 45, 3, p. 137-144 8 p.

Research output: Contribution to journalArticle

Electrical characterisation of ALD Al2O3 and HfO2 films on germanium

Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Electrical characterisation of SOI substrates incorporating WSix ground planes

Armstrong, M., Bain, M., Baine, P., Gamble, H. & McNeill, D., Apr 2004, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes

Bain, M., Jin, M., Loh, S., Armstrong, M., Gamble, H. & McNeill, D., Feb 2005, In : IEEE Electron Device Letters. 26, 2, p. 72-74 3 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Electrical characterization of ALD Al2O3 and HfO2 films on germanium

Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., 2010, In : ECS Transactions. 28, 1, p. 201-207 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Electrical Properties of High-k Ta O Gate Dielectrics on Strained Ge-Rich Layers

Armstrong, M. & Gamble, H., May 2004, p. 483-486. 4 p.

Research output: Contribution to conferencePaper

Electrical Properties of High-k ZrO Gate Dielectrics on Strained Ge-Rich Layers

Armstrong, M. & Gamble, H., May 2004, p. 405-407. 3 p.

Research output: Contribution to conferencePaper

Electromigration in copper interconnects

McCusker, N., Len, V. S. C., McNeill, D., Armstrong, M. & Gamble, H., Jun 1998, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Electronic characterisation of Ge MOSTs measured at low temperature

McNeill, D., Low, Y., Tantraviwat, D., Rainey, P., Baine, P., Mitchell, N., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Epitaxial silicon growth by rapid thermal CVD

McNeill, D., Liang, Y., Montgomery, J., Gamble, H. & Armstrong, M., Sep 1991, In : Journal De Physique Iv. 1(C2), p. 779-786 8 p.

Research output: Contribution to journalArticle

Fabrication and characterisation of silicon on insulator substrates incorporating thermal vias

Bain, M., Baine, P., McNeill, D., Srinivasan, G., Jankovic, N., McCartney, J., Moore, R. A., Armstrong, M. & Gamble, H., Apr 2005, p. 103-108. 6 p.

Research output: Contribution to conferencePaper

Fabrication of SOI substrates with buried tungsten silicide layer by smart-cut technique

Suder, S., Hurley, R., Bain, M., Baine, P., McNeill, D., Armstrong, M. & Gamble, H., Sep 2001, p. 279-282. 4 p.

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies

Ruddell, F., Bain, M., Suder, S., Hurley, R., Armstrong, M., Fusco, V. & Gamble, H., Sep 2003, SEMICONDUCTOR WAFER BONDING VII: SCIENCE, TECHNOLOGY, AND APPLICATIONS, PROCEEDINGS. Vol. 2003. p. 25-30 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. & McNeill, D. W., 06 Jan 2014, In : Applied Physics Letters. 104, 1, 012102.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Gate dielectrics on strained-Ge layers on Si(1-x)/Ge( x)/Si virtual substrates

Armstrong, M. & Gamble, H., Nov 2003, p. 48-49. 2 p.

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Germanium bonding to AI2O3

Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y. & Bain, M., 2008, In : ECS Transactions. 16, 8, p. 407-414 8 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)