Photo of Mervyn Armstrong
  • Room 08.006 - Ashby Tower

    United Kingdom

19902014

Research output per year

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Research Output

Article

(Invited) Germanium on Sapphire Technology

Gamble, H., Baine, P. B., Low, Y. H., Rainey, P. V., Montgomery, J. H., Bain, M. F., Armstrong, B. M., McNeill, D. W. & Mitchell, N. S., Nov 2010, In : ECS Transactions. 33, 11, p. 37-50 14 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

Len, V. S. C., Hurley, R., McCusker, N., McNeill, D., Armstrong, M. & Gamble, H., Jun 1999, In : Solid State Electronics. 43(6), p. 1045-1049 5 p.

Research output: Contribution to journalArticle

27 Citations (Scopus)

Application of atmospheric plasma for low temperature wafer bonding

Low, Y. W., Rainey, P., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 385-393 9 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

McNeill, D., Bhattacharya, S., Wadsworth, H., Ruddell, F., Mitchell, N., Armstrong, M. & Gamble, H., Feb 2008, In : Journal of Materials Science: Materials in Electronics. 19, 2, p. 119-123 5 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Carrier mobility variations in self-aligned germanium MOS transistors

Low, Y., Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Apr 2010, In : ECS Transactions. 28(1), p. 43-49 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs

Gajula, D. R., McNeill, D., Baine, P., Fleming, P., Duffy, R. & Armstrong, B. M., May 2011, In : ECS Transactions. 35, 3, p. 521-527 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator

Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M., Baine, P., Adley, D. & Perova, T. S., Apr 2012, In : ECS Transactions. 45, p. 169-180 12 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Comparison of Si1-yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition

Ray, S. K., McNeill, D., Gay, D. L., Maiti, C. K., Armstrong, A., Armstrong, M. & Gamble, H., Feb 1997, In : Thin Solid Films. 294(1-2), p. 149-152 4 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Composition and stress analysis in Si structures using micro-raman spectroscopy

Armstrong, M. & Gamble, H., Sep 2004, In : Scanning. 25(5), 5, p. 235-239 5 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Cross-talk suppression in SOI substrates

Armstrong, M., Baine, P., Gamble, H. & Linton, D., Sep 2005, In : SOLID-STATE ELECTRONICS. 9, 9 SPEC. ISS., p. 1461-1465 5 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Determination of band offsets in strained-Si heterolayers

Armstrong, M. & Gamble, H., Sep 2004, In : Thin Solis Films. 462-463, SPEC. ISS., p. 80-84 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Development of a Monolithic Active Pixel Sensor using SOI Technology with a Thick Device Layer

Armstrong, M., Gamble, H., Ruddell, F., Marczewski, J., Grabiec, P., Kucharski, K., Tomaszewski, D., Kucewicz, W., Kusiak, T., Sapor, M., Loster, B. W. & Majewski, S., Feb 2010, In : IEEE Transactions on Nuclear Science. 57, 1 PART 2, p. 381-386 6 p., 5410008.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Dopant Transport in Tungsten Silicide Buried Layers for Application in SSOI

Armstrong, M., Baine, P., Montgomery, J., McNeill, D., Gamble, H. & Bain, M., Apr 2010, In : ECS Transactions. 28(1), p. 331-341 11 p.

Research output: Contribution to journalArticle

Effect of deposition temperature on the formation of CoSi2 through the rapid thermal annealing of CVD cobalt

Armstrong, M., Bain, M. & Gamble, H., Oct 2004, In : Microelectronic Engineering. 76(1-4), 1-4, p. 336-342 7 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs

Murad, S., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Armstrong, M. & Modreanu, M., Apr 2012, In : ECS Transactions. 45, 3, p. 137-144 8 p.

Research output: Contribution to journalArticle

Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes

Bain, M., Jin, M., Loh, S., Armstrong, M., Gamble, H. & McNeill, D., Feb 2005, In : IEEE Electron Device Letters. 26, 2, p. 72-74 3 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Electrical characterization of ALD Al2O3 and HfO2 films on germanium

Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., 2010, In : ECS Transactions. 28, 1, p. 201-207 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Epitaxial silicon growth by rapid thermal CVD

McNeill, D., Liang, Y., Montgomery, J., Gamble, H. & Armstrong, M., Sep 1991, In : Journal De Physique Iv. 1(C2), p. 779-786 8 p.

Research output: Contribution to journalArticle

Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. & McNeill, D. W., 06 Jan 2014, In : Applied Physics Letters. 104, 1, 012102.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Germanium bonding to AI2O3

Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y. & Bain, M., 2008, In : ECS Transactions. 16, 8, p. 407-414 8 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

Wadsworth, H., Bhattacharya, S., McNeill, D., Ruddell, F., Armstrong, M., Gamble, H. & Denvir, D., Aug 2006, In : Materials Science in Semiconductor Processing. 9, 4-5 SPEC. ISS., p. 685-689 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Germanium on sapphire

Gamble, H., Baine, P., Wadsworth, H., Low, Y., Rainey, P., Ruddell, F., Armstrong, M., McNeill, D. & Mitchell, N., Dec 2008, In : International Journal of High Speed Electronics and Systems. 18, 4, p. 805-814 10 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
25 Downloads (Pure)

Germanium on Sapphire By Wafer Bonding

Baine, P., Gamble, H., Armstrong, M., McNeill, D., Mitchell, N., Low, Y. & Rainey, P., Dec 2008, In : Solid State Electronics. 52, 12, p. 1840-1844 5 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)
6 Downloads (Pure)

Germanium on Sapphire Technology

Gamble, H., Baine, P., Low, Y., Rainey, P., Montgomery, J., Armstrong, M., McNeill, D. & Mitchell, N., Nov 2010, In : ECS Transactions. 33(11), p. 37-50 14 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Hydrogen implantation in germanium

Low, Y. W., Rainey, P., Hurley, R., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 375-383 9 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Internal photoemission study on charge trapping behaviour in rapid thermal oxides on strained-Si/SiGe heterolayers

Armstrong, M., Gamble, H., Bera, M. K., Mahata, C., Bhattacharya, S., Chakraborty, A. K. & Maiti, C. K., Sep 2008, In : Applied Surface Science. 255, p. 2971-2977 7 p.

Research output: Contribution to journalArticle

Investigation into the selectivity of CVD iron from Fe(CO)5 precursor on various metal and dielectric patterned substrates

Armstrong, M., Bain, M., Gamble, H., Low, Y. & Montgomery, J., 25 Sep 2007, In : Surface and Coatings Technology. 201(21-23), 22-23 SPEC. ISS., p. 8998-9002 5 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Investigation of germanium implanted with hydrogen for layer transfer applications

Perova, T. S., Armstrong, M., Wasyluk, J., Baine, P., Rainey, P., Mitchell, N., McNeill, D., Gamble, H. & Hurley, R., Aug 2011, In : Solid State Phenomena. 178-179, p. 295-300 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples

Wasyluk, J., Rainey, P. V., Perova, T. S., Mitchell, N., McNeill, D., Gamble, H., Armstrong, M. & Hurley, R., Mar 2012, In : Journal of Raman Spectroscopy. 43, 3, p. 448-454 7 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Laser annealing of sputtered silicon for wafer-bonding applications

Hurley, R., Gamble, H., Jin, M., Armstrong, M., Ghita, M., McCullough, R., Adikaari, A. A. D. T., Henly, S. J. & Silva, S. R. P., Jan 2007, In : JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 9, 1, p. 121-126 6 p.

Research output: Contribution to journalArticle

Low Temperature Bonding of PECVD Silicon Dioxide Layers

Baine, P., Bain, M., McNeill, D., Gamble, H. & Armstrong, M., Nov 2006, In : ECS Transactions. 3(6), 6, p. 165-173 9 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Low-temperature plasma enhanced chemical vapor deposition of tungsten and tungsten nitride

Armstrong, M., Bain, M. & Gamble, H., May 2003, In : Journal of Materials Science: Materials in Electronics. 14, 5-7, p. 329-333 5 p.

Research output: Contribution to journalArticle

Low temperature surface nitridation processes for dielectric-Ge interfaces

Wadsworth, H. J., Bhattacharya, S., Ruddell, F. H., McNeill, D. W., Mitchell, N., Armstrong, B. M., Gamble, H. S. & Denvir, D., 01 Jan 2006, In : ECS Transactions. 3, 7, p. 531-537 7 p.

Research output: Contribution to journalArticle

LPCVD of tungsten by selective deposition on silicon

Li, F. X., Armstrong, M. & Gamble, H., Jun 2001, In : Journal of Materials Science: Materials in Electronics. 12(4/6), 4-6, p. 303-306 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Multiple self-aligned iron nanowires by a dual selective chemical vapor deposition process

Bien, D. C. S., Bain, M. F., Low, Y. H., Mitchell, N. S. J., Armstrong, M. B. & Gamble, H. S., 2007, In : Electrochemical and Solid-State Letters. 10, 9, p. H251-H253 3 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Novel materials for thermal via incorporation into SOI structures

Baine, P., Choon, K. Y., Gamble, H., Armstrong, M. & Mitchell, N., Jun 2001, In : Journal of Materials Science: Materials in Electronics. 12(4/6), 4-6, p. 215-218 4 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
1 Citation (Scopus)

Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

Murad, S. N. A., Baine, P. T., McNeill, D. W., Mitchell, N., Armstrong, B. M., Modreanu, M., Hughes, G. & Chellappan, R. K., Dec 2012, In : SOLID-STATE ELECTRONICS. 78, p. 136-140 5 p.

Research output: Contribution to journalArticle

29 Citations (Scopus)

Polycrystalline silicon film growth in a SiF4/SiH4/H2 plasma

Lee, B., Quinn, L. J., Baine, P. T., Mitchell, S. J. N., Armstrong, B. M. & Gamble, H. S., 11 Jan 1999, In : Thin Solid Films. 337, 1-2, p. 55-58 4 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Selective depostion of CVD iron on silicon dioxide and tungsten

Armstrong, M., Baine, P., Bien, D., Gamble, H., Montgomery, J. & Low, Y., Nov 2006, In : Microelectronic Engineering. 83(11-12), p. 2229-2233 5 p.

Research output: Contribution to journalArticle

SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers

Bain, M., El Mubarek, H. A. W., Bonar, J. M., Wang, Y., Buiu, O., Gamble, H., Armstrong, M., Hemment, P. L. F., Hall, S. & Ashburn, P., Mar 2005, In : IEEE Transactions on Electron Devices. 52 (3), 3, p. 317-324 8 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers

Armstrong, M., Bain, M. & Gamble, H., Mar 2005, In : IEEE Transactions on Energy Conversion. 52(3), p. 317-324 8 p.

Research output: Contribution to journalArticle

Silicon-on-insulator substrates with buried tungsten silicide layer

Gamble, H., Armstrong, M., Baine, P., Bain, M. & McNeill, D., Apr 2001, In : Solid State Electronics. 45(4), 4, p. 551-557 7 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

The deposition and characterisation of CVD tungsten silicide for applications in microelectronics

Armstrong, M., Bain, M. & Gamble, H., Jan 2002, In : Vacuum. 64(3-4), 3-4, p. 227-232 6 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

Srinivasan, G., Bain, M., Bhattacharya, S., Baine, P., Armstrong, M., Gamble, H. & McNeill, D., Dec 2004, In : Materials Science and Engineering B. 114-115, SPEC. ISS., p. 223-227 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Ultralow Silicon Substrate Noise Crosstalk Using Metal Faraday Cages in an SOI Technology

Stefanou, S., Hamel, J. S., Baine, P., Bain, M., Armstrong, M., Gamble, H., Kraft, M. & Kemhadjian, H. A., Mar 2004, In : IEEE Transactions on Electron Devices. 51(3), 3, p. 486-491 6 p.

Research output: Contribution to journalArticle

28 Citations (Scopus)
Chapter

Germanium Processing

Gamble, H., Armstrong, M., Baine, P., Low, Y. H., Rainey, P. V., Mitchell, N. & McNeill, D., Feb 2011, Semiconductor-On-Insulator Materials for Nanoelectronics Applications. Nazarov, C., Balestra, Raskin, Gamiz & Lysenko (eds.). Springer, p. 3-29 27 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Conference contribution

Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies

Ruddell, F., Bain, M., Suder, S., Hurley, R., Armstrong, M., Fusco, V. & Gamble, H., Sep 2003, SEMICONDUCTOR WAFER BONDING VII: SCIENCE, TECHNOLOGY, AND APPLICATIONS, PROCEEDINGS. Vol. 2003. p. 25-30 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
Paper

A Radiation Study of High-Resistivity SOI Substrates for High Energy Physics Applications

Armstrong, M., Gamble, H., Ruddell, F., Suder, S. & Montgomery, J., Jan 2008, p. 1-2. 2 p.

Research output: Contribution to conferencePaper