Photo of Mervyn Armstrong
  • Room 08.006 - Ashby Tower

    United Kingdom

19902014

Research output per year

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Research Output

2007

Germanium on Sapphire

Armstrong, M., Baine, P., Gamble, H., McNeill, D., Mitchell, N., Rainey, P., Ruddell, F. & Wadsworth, H., Dec 2007, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

IC SUBSTRATE AND METHOD OF MANUFACTURE

Armstrong, M., Gamble, H., McNeill, D. & Mitchell, N., Dec 2007, Patent No. Patent Application PCT/GB2007/002281

Research output: Patent

Integration of ultrathin SOI using ion split and etch back processes

Armstrong, M., Baine, P., Gamble, H., McNeill, D. & Suder, S., Jan 2007, p. 19-20. 2 p.

Research output: Contribution to conferencePaper

Investigation into the selectivity of CVD iron from Fe(CO)5 precursor on various metal and dielectric patterned substrates

Armstrong, M., Bain, M., Gamble, H., Low, Y. & Montgomery, J., 25 Sep 2007, In : Surface and Coatings Technology. 201(21-23), 22-23 SPEC. ISS., p. 8998-9002 5 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Laser annealing of sputtered silicon for wafer-bonding applications

Hurley, R., Gamble, H., Jin, M., Armstrong, M., Ghita, M., McCullough, R., Adikaari, A. A. D. T., Henly, S. J. & Silva, S. R. P., Jan 2007, In : JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 9, 1, p. 121-126 6 p.

Research output: Contribution to journalArticle

Multiple self-aligned iron nanowires by a dual selective chemical vapor deposition process

Bien, D. C. S., Bain, M. F., Low, Y. H., Mitchell, N. S. J., Armstrong, M. B. & Gamble, H. S., 2007, In : Electrochemical and Solid-State Letters. 10, 9, p. H251-H253 3 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Novel low temperature techniques for growth of ultrathin oxides for strained Si MOS devices

Armstrong, M. & Gamble, H., Dec 2007, p. 429-432. 4 p.

Research output: Contribution to conferencePaper

2006

Buried Dielectrics for GeOI

Armstrong, M., Ruddell, F., Wadsworth, H., Gamble, H. & McNeill, D., Mar 2006, p. 43-44. 2 p.

Research output: Contribution to conferencePaper

Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration

Armstrong, M., Baine, P., Gamble, H., McNeill, D. & Suder, S., Oct 2006, p. 531-537. 7 p.

Research output: Contribution to conferencePaper

Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

Armstrong, M., Gamble, H., McNeill, D., Ruddell, F. & Wadsworth, H., May 2006, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

7 Citations (Scopus)

Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

Wadsworth, H., Bhattacharya, S., McNeill, D., Ruddell, F., Armstrong, M., Gamble, H. & Denvir, D., Aug 2006, In : Materials Science in Semiconductor Processing. 9, 4-5 SPEC. ISS., p. 685-689 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Low Temperature Bonding of PECVD Silicon Dioxide Layers

Baine, P., Bain, M., McNeill, D., Gamble, H. & Armstrong, M., Nov 2006, In : ECS Transactions. 3(6), 6, p. 165-173 9 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Low temperature surface nitridation processes for dielectric-Ge interfaces

Wadsworth, H. J., Bhattacharya, S., Ruddell, F. H., McNeill, D. W., Mitchell, N., Armstrong, B. M., Gamble, H. S. & Denvir, D., 01 Jan 2006, In : ECS Transactions. 3, 7, p. 531-537 7 p.

Research output: Contribution to journalArticle

Micro and Nano Fabrication

Armstrong, M., May 2006, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Selective depostion of CVD iron on silicon dioxide and tungsten

Armstrong, M., Baine, P., Bien, D., Gamble, H., Montgomery, J. & Low, Y., Nov 2006, In : Microelectronic Engineering. 83(11-12), p. 2229-2233 5 p.

Research output: Contribution to journalArticle

Selective depostion of CVD iron on SiO2 and tungsten

Armstrong, M., Bain, M., Bien, D., Montgomery, J. & Gamble, H., Mar 2006, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

2005

Cross-talk suppression in SOI substrates

Armstrong, M., Bain, M., Baine, P., Gamble, H., McNeill, D. & Montgomery, J., Jan 2005, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

9 Citations (Scopus)

Cross-talk suppression in SOI substrates

Armstrong, M., Baine, P., Gamble, H. & Linton, D., Sep 2005, In : SOLID-STATE ELECTRONICS. 9, 9 SPEC. ISS., p. 1461-1465 5 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes

Bain, M., Jin, M., Loh, S., Armstrong, M., Gamble, H. & McNeill, D., Feb 2005, In : IEEE Electron Device Letters. 26, 2, p. 72-74 3 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Fabrication and characterisation of silicon on insulator substrates incorporating thermal vias

Bain, M., Baine, P., McNeill, D., Srinivasan, G., Jankovic, N., McCartney, J., Moore, R. A., Armstrong, M. & Gamble, H., Apr 2005, p. 103-108. 6 p.

Research output: Contribution to conferencePaper

Novel Bonding Techniques using the Formation of NiSi and TiSi2

Armstrong, M., Bain, M., Baine, P. & Gamble, H., Jan 2005, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers

Bain, M., El Mubarek, H. A. W., Bonar, J. M., Wang, Y., Buiu, O., Gamble, H., Armstrong, M., Hemment, P. L. F., Hall, S. & Ashburn, P., Mar 2005, In : IEEE Transactions on Electron Devices. 52 (3), 3, p. 317-324 8 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers

Armstrong, M., Bain, M. & Gamble, H., Mar 2005, In : IEEE Transactions on Energy Conversion. 52(3), p. 317-324 8 p.

Research output: Contribution to journalArticle

Silicon-on-insulator substrates with buried ground, planes (GPSOI)

Bain, M., Stefanos, S., Baine, P., Loh, S. H., Jin, L., Montgomery, J., Armstrong, M., Gamble, H., Hamel, J., McNeill, D., Kraft, A. & Kemhadjian, H., Apr 2005, p. 273-278. 6 p.

Research output: Contribution to conferencePaper

Silicon on silicide on insulator substrates

Baine, P., Bain, M., Jin, M., Gamble, H., Armstrong, M. & Campbell, D., Jan 2005, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Status of SiGe HBTs on SOI

Armstrong, M. & Gamble, H., Jan 2005, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

2004

Composition and stress analysis in Si/SiGe structures

Armstrong, M. & Gamble, H., Sep 2004, p. 226-230. 5 p.

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Composition and stress analysis in Si structures using micro-raman spectroscopy

Armstrong, M. & Gamble, H., Sep 2004, In : Scanning. 25(5), 5, p. 235-239 5 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Composition and stress analysis in Si structures using micro-Raman spectroscopy

Armstrong, M. & Gamble, H., Apr 2004, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

12 Citations (Scopus)

Determination of band offsets in strained-Si heterolayers

Armstrong, M. & Gamble, H., Sep 2004, In : Thin Solis Films. 462-463, SPEC. ISS., p. 80-84 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Effect of deposition temperature on the formation of CoSi2 through the rapid thermal annealing of CVD cobalt

Armstrong, M., Bain, M. & Gamble, H., Oct 2004, In : Microelectronic Engineering. 76(1-4), 1-4, p. 336-342 7 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Electrical characterisation of SOI substrates incorporating WSix ground planes

Armstrong, M., Bain, M., Baine, P., Gamble, H. & McNeill, D., Apr 2004, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Electrical Properties of High-k Ta O Gate Dielectrics on Strained Ge-Rich Layers

Armstrong, M. & Gamble, H., May 2004, p. 483-486. 4 p.

Research output: Contribution to conferencePaper

Electrical Properties of High-k ZrO Gate Dielectrics on Strained Ge-Rich Layers

Armstrong, M. & Gamble, H., May 2004, p. 405-407. 3 p.

Research output: Contribution to conferencePaper

Laser-annealing of sputtered silicon for wafer bonding applications

Armstrong, M., Gamble, H. & Hurley, R., Sep 2004, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI)

Armstrong, M., Bain, M., Baine, P., Gamble, H., McNeill, D. & Montgomery, J., Apr 2004, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

Srinivasan, G., Bain, M., Bhattacharya, S., Baine, P., Armstrong, M., Gamble, H. & McNeill, D., Dec 2004, In : Materials Science and Engineering B. 114-115, SPEC. ISS., p. 223-227 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Ultralow Silicon Substrate Noise Crosstalk Using Metal Faraday Cages in an SOI Technology

Stefanou, S., Hamel, J. S., Baine, P., Bain, M., Armstrong, M., Gamble, H., Kraft, M. & Kemhadjian, H. A., Mar 2004, In : IEEE Transactions on Electron Devices. 51(3), 3, p. 486-491 6 p.

Research output: Contribution to journalArticle

28 Citations (Scopus)
2003

Conduction mechanism in high-k ZrO2 gate dielectric films on strained-Ge layers

Armstrong, M. & Gamble, H., Dec 2003, p. 29-30. 2 p.

Research output: Contribution to conferencePaper

Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies

Ruddell, F., Bain, M., Suder, S., Hurley, R., Armstrong, M., Fusco, V. & Gamble, H., Sep 2003, SEMICONDUCTOR WAFER BONDING VII: SCIENCE, TECHNOLOGY, AND APPLICATIONS, PROCEEDINGS. Vol. 2003. p. 25-30 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Gate dielectrics on strained-Ge layers on Si(1-x)/Ge( x)/Si virtual substrates

Armstrong, M. & Gamble, H., Nov 2003, p. 48-49. 2 p.

Research output: Contribution to conferencePaper

3 Citations (Scopus)

High-k ZrO2 gate dielectric on strained-Si

Armstrong, M. & Gamble, H., Dec 2003, p. 259-164. 96 p.

Research output: Contribution to conferencePaper

Low-temperature plasma enhanced chemical vapor deposition of tungsten and tungsten nitride

Armstrong, M., Bain, M. & Gamble, H., May 2003, In : Journal of Materials Science: Materials in Electronics. 14, 5-7, p. 329-333 5 p.

Research output: Contribution to journalArticle

Manufacture processes for GPSOI substrates and their influence on cross-talk suppression

Baine, P., Gamble, H., Armstrong, M., McNeill, D., Bain, M., Hamel, J. S. & Kraft, M., Apr 2003, p. 57-63. 7 p.

Research output: Contribution to conferencePaper

Manufacturing processes for WSi2-GPSOI substrates and their influence on cross-talk suppression and inductance

Baine, P., Gamble, H., Armstrong, M., Bain, M., McNeill, D., Hamel, J., Stefanos, S. & Kraft, M., Apr 2003.

Research output: Contribution to conferencePaper

Manufacturing processes for WSi2-GPSOI substrates and their influence on cross-talk suppression and inductance

Armstrong, M., Bain, M., Baine, P., Gamble, H. & McNeill, D., Sep 2003. 7 p.

Research output: Contribution to conferencePaper

2002

Cross-talk suppression Faraday cage structure in silicon-on-insulator

Armstrong, M., Baine, P., Bain, M. & Gamble, H., Oct 2002, p. 18`-182. 1 p.

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Low Temperature Plasma enhanced Chemical Vapour Deposition of Tungsten and Tungsten Nitride.

Armstrong, M., Bain, M. & Gamble, H., Jun 2002, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

The deposition and characterisation of CVD tungsten silicide for applications in microelectronics

Armstrong, M., Bain, M. & Gamble, H., Jan 2002, In : Vacuum. 64(3-4), 3-4, p. 227-232 6 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)