Photo of Mervyn Armstrong
  • Room 08.006 - Ashby Tower

    United Kingdom

19902014

Research output per year

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Research Output

2001

Fabrication of SOI substrates with buried tungsten silicide layer by smart-cut technique

Suder, S., Hurley, R., Bain, M., Baine, P., McNeill, D., Armstrong, M. & Gamble, H., Sep 2001, p. 279-282. 4 p.

Research output: Contribution to conferencePaper

1 Citation (Scopus)

LPCVD of tungsten by selective deposition on silicon

Li, F. X., Armstrong, M. & Gamble, H., Jun 2001, In : Journal of Materials Science: Materials in Electronics. 12(4/6), 4-6, p. 303-306 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Novel materials for thermal via incorporation into SOI structures

Baine, P., Choon, K. Y., Gamble, H., Armstrong, M. & Mitchell, N., Jun 2001, In : Journal of Materials Science: Materials in Electronics. 12(4/6), 4-6, p. 215-218 4 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Silicon-on-insulator substrates with buried tungsten silicide layer

Gamble, H., Armstrong, M., Baine, P., Bain, M. & McNeill, D., Oct 2001.

Research output: Contribution to conferencePaper

20 Citations (Scopus)

Silicon-on-insulator substrates with buried tungsten silicide layer

Gamble, H., Armstrong, M., Baine, P., Bain, M. & McNeill, D., Apr 2001, In : Solid State Electronics. 45(4), 4, p. 551-557 7 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)
2000

Novel materials for thermal via incorporation into SOI structures

Baine, P., Choon, K. Y., Gamble, H., Armstrong, M. & Mitchell, N., Oct 2000.

Research output: Contribution to conferencePaper

Thermal Vias for SOI Technology

Baine, P., Uppal, S., Bain, M., Armstrong, M., Mitchell, N. & Gamble, H., Oct 2000, p. 239-242. 4 p.

Research output: Contribution to conferencePaper

Ultra-thin BESOI fabrication techniques

Bhattacharya, S., Suder, S., Baine, P., McNeill, D., Uppal, S., Armstrong, A., Armstrong, M. & Gamble, H., Dec 2000, p. 227-230. 4 p.

Research output: Contribution to conferencePaper

1999

An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

Len, V. S. C., Hurley, R., McCusker, N., McNeill, D., Armstrong, M. & Gamble, H., Jun 1999, In : Solid State Electronics. 43(6), p. 1045-1049 5 p.

Research output: Contribution to journalArticle

27 Citations (Scopus)

Back gate effects in N-channel monocrystalline silicon devices-on-glass and their suppression by boron ion implantation

Baine, P., Mitchell, N., Gamble, H. & Armstrong, M., Apr 1999, p. 369-374. 6 p.

Research output: Contribution to conferencePaper

Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers

Uppal, S., Gay, D. L., Armstrong, A., McNeill, D., Baine, P., Armstrong, M., Gamble, H. & Yallup, K., May 1999, p. 219-224. 6 p.

Research output: Contribution to conferencePaper

Investigation of p-type contamination in thin SOI layers during fabrication

Uppal, S., Gay, D. L., Armstrong, A., McNeill, D., Baine, P., Armstrong, M., Gamble, H. & Yallop, K., Apr 1999, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Investigation of the role of chemical-mechanical polishing in improving the performance of polysilicon TFTs

Lee, B., Quinn, L., Baine, P., Mitchell, N., Armstrong, M. & Gamble, H., Apr 1999, p. 257-262. 6 p.

Research output: Contribution to conferencePaper

Polycrystalline silicon film growth in a SiF4/SiH4/H2 plasma

Lee, B., Quinn, L. J., Baine, P. T., Mitchell, S. J. N., Armstrong, B. M. & Gamble, H. S., 11 Jan 1999, In : Thin Solid Films. 337, 1-2, p. 55-58 4 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)
1998

Control of Leakage Current in Polysilicon TFT´s by the Implantation of Boron

Quinn, L. J., Baine, P., Lee, B., Mitchell, N., Armstrong, M. & Gamble, H., Sep 1998, p. 588-591. 4 p.

Research output: Contribution to conferencePaper

Electromigration in copper interconnects

McCusker, N., Len, V. S. C., McNeill, D., Armstrong, M. & Gamble, H., Jun 1998, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications

McNeill, D., Gay, D. L., Li, X., Armstrong, M. & Gamble, H., Apr 1998, p. 307-313. 7 p.

Research output: Contribution to conferencePaper

1997

BESOI using a silicon germanium etch stop

Li, X., Gay, D. L., McNeill, D., Armstrong, M. & Gamble, H., Sep 1997, p. 313-320. 8 p.

Research output: Contribution to conferencePaper

Comparison of Si1-yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition

Ray, S. K., McNeill, D., Gay, D. L., Maiti, C. K., Armstrong, A., Armstrong, M. & Gamble, H., Feb 1997, In : Thin Solid Films. 294(1-2), p. 149-152 4 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Single crystal silicon on glass substrates

Baine, P., Gay, D. L., Quinn, L. J., Lee, B., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., Apr 1997, p. 0-0. 1 p.

Research output: Contribution to conferencePaper

1996
1993

Growth of multi-layer Si/Si1-xGex structures using rapid thermal chemical vapour deposition

McNeill, D., Armstrong, M. & Gamble, H., Dec 1993, p. 187-192. 6 p.

Research output: Contribution to conferencePaper

1992
1 Citation (Scopus)
1991

Epitaxial silicon growth by rapid thermal CVD

McNeill, D., Liang, Y., Montgomery, J., Gamble, H. & Armstrong, M., Sep 1991, In : Journal De Physique Iv. 1(C2), p. 779-786 8 p.

Research output: Contribution to journalArticle

Low temperature epitaxial silicon growth in a rapid thermal processor

McNeill, D., Gamble, H. & Armstrong, M., May 1991, p. 235-240. 6 p.

Research output: Contribution to conferencePaper

Rapid thermal epitaxial growth for static induction thyristors

Ye, L., McNeill, D., Montgomery, J., Raza, S. H., Armstrong, M. & Gamble, H., Sep 1991, p. O-025-O-029. 5 p.

Research output: Contribution to conferencePaper

1990

Silicon carbide layers produced by rapid thermal CVD

Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Oct 1990, p. 159-170. 12 p.

Research output: Contribution to conferencePaper

The application of limited reaction processing to the deposition of silicon carbide layers

Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Sep 1990, p. 357-360. 4 p.

Research output: Contribution to conferencePaper