Mervyn Armstrong

Research Output

Research Output per year

1990 2014

• 77 Paper
• 47 Article
• 1 Chapter
• 1 Conference contribution
• 2 More
  • 1 Poster
  • 1 Patent

Research Output per year

Research Output per year

Search results

• 2014

  Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

  Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. & McNeill, D. W., 06 Jan 2014, In : Applied Physics Letters. 104, 1, 012102.

  Research output: Contribution to journal › Article › peer-review

  • germanium
  • aluminum
  • contact resistance
  • diodes
  • atomic layer epitaxy
  9 Citations (Scopus)
• 2012

  Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator

  Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M., Baine, P., Adley, D. & Perova, T. S., Apr 2012, In : ECS Transactions. 45, p. 169-180 12 p.

  Research output: Contribution to journal › Article › peer-review
  4 Citations (Scopus)

• Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs

  Murad, S., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Armstrong, M. & Modreanu, M., Apr 2012, In : ECS Transactions. 45, 3, p. 137-144 8 p.

  Research output: Contribution to journal › Article › peer-review

• Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples

  Wasyluk, J., Rainey, P. V., Perova, T. S., Mitchell, N., McNeill, D., Gamble, H., Armstrong, M. & Hurley, R., Mar 2012, In : Journal of Raman Spectroscopy. 43, 3, p. 448-454 7 p.

  Research output: Contribution to journal › Article › peer-review
  7 Citations (Scopus)

• Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

  Murad, S. N. A., Baine, P. T., McNeill, D. W., Mitchell, N., Armstrong, B. M., Modreanu, M., Hughes, G. & Chellappan, R. K., Dec 2012, In : SOLID-STATE ELECTRONICS. 78, p. 136-140 5 p.

  Research output: Contribution to journal › Article › peer-review
  30 Citations (Scopus)
• 2011

  Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs

  Gajula, D. R., McNeill, D., Baine, P., Fleming, P., Duffy, R. & Armstrong, B. M., May 2011, In : ECS Transactions. 35, 3, p. 521-527 7 p.

  Research output: Contribution to journal › Article › peer-review

  • Rapid thermal annealing
  • Germanium
  • Nickel
  • Fabrication
  • Electrons
  1 Citation (Scopus)

• Investigation of germanium implanted with hydrogen for layer transfer applications

  Perova, T. S., Armstrong, M., Wasyluk, J., Baine, P., Rainey, P., Mitchell, N., McNeill, D., Gamble, H. & Hurley, R., Aug 2011, In : Solid State Phenomena. 178-179, p. 295-300 6 p.

  Research output: Contribution to journal › Article › peer-review

  4 Citations (Scopus)
• 2010

  (Invited) Germanium on Sapphire Technology

  Gamble, H., Baine, P. B., Low, Y. H., Rainey, P. V., Montgomery, J. H., Bain, M. F., Armstrong, B. M., McNeill, D. W. & Mitchell, N. S., Nov 2010, In : ECS Transactions. 33, 11, p. 37-50 14 p.

  Research output: Contribution to journal › Article › peer-review

  • Germanium
  • Substrates
  • Silicon
  • Wafer bonding
  • Dielectric losses
  1 Citation (Scopus)

• Application of atmospheric plasma for low temperature wafer bonding

  Low, Y. W., Rainey, P., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 385-393 9 p.

  Research output: Contribution to journal › Article › peer-review

  2 Citations (Scopus)

• Carrier mobility variations in self-aligned germanium MOS transistors

  Low, Y., Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Apr 2010, In : ECS Transactions. 28(1), p. 43-49 7 p.

  Research output: Contribution to journal › Article › peer-review

  1 Citation (Scopus)

• Development of a Monolithic Active Pixel Sensor using SOI Technology with a Thick Device Layer

  Armstrong, M., Gamble, H., Ruddell, F., Marczewski, J., Grabiec, P., Kucharski, K., Tomaszewski, D., Kucewicz, W., Kusiak, T., Sapor, M., Loster, B. W. & Majewski, S., Feb 2010, In : IEEE Transactions on Nuclear Science. 57, 1 PART 2, p. 381-386 6 p., 5410008.

  Research output: Contribution to journal › Article › peer-review

  7 Citations (Scopus)

• Dopant Transport in Tungsten Silicide Buried Layers for Application in SSOI

  Armstrong, M., Baine, P., Montgomery, J., McNeill, D., Gamble, H. & Bain, M., Apr 2010, In : ECS Transactions. 28(1), p. 331-341 11 p.

  Research output: Contribution to journal › Article › peer-review

• Electrical characterization of ALD Al2O3 and HfO2 films on germanium

  Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., 2010, In : ECS Transactions. 28, 1, p. 201-207 7 p.

  Research output: Contribution to journal › Article › peer-review

  • Atomic layer deposition
  • Germanium
  • Aluminum oxide
  • Characterization (materials science)
  • Capacitors
  2 Citations (Scopus)

• Germanium on Sapphire Technology

  Gamble, H., Baine, P., Low, Y., Rainey, P., Montgomery, J., Armstrong, M., McNeill, D. & Mitchell, N., Nov 2010, In : ECS Transactions. 33(11), p. 37-50 14 p.

  Research output: Contribution to journal › Article › peer-review

  1 Citation (Scopus)

• Hydrogen implantation in germanium

  Low, Y. W., Rainey, P., Hurley, R., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 375-383 9 p.

  Research output: Contribution to journal › Article › peer-review

  1 Citation (Scopus)
• 2008

  Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

  McNeill, D., Bhattacharya, S., Wadsworth, H., Ruddell, F., Mitchell, N., Armstrong, M. & Gamble, H., Feb 2008, In : Journal of Materials Science: Materials in Electronics. 19, 2, p. 119-123 5 p.

  Research output: Contribution to journal › Article › peer-review

  • hafnium oxide
  • Hafnium oxides
  • Germanium
  • Atomic layer deposition
  • hafnium oxides
  20 Citations (Scopus)

• Germanium bonding to AI2O3

  Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y. & Bain, M., 2008, In : ECS Transactions. 16, 8, p. 407-414 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Germanium
  • Aluminum oxide
  • Single crystals
  • Polysilicon
  • Silica
  2 Citations (Scopus)

• Germanium on sapphire

  Gamble, H., Baine, P., Wadsworth, H., Low, Y., Rainey, P., Ruddell, F., Armstrong, M., McNeill, D. & Mitchell, N., Dec 2008, In : International Journal of High Speed Electronics and Systems. 18, 4, p. 805-814 10 p.

  Research output: Contribution to journal › Article › peer-review

  • Germanium
  • Aluminum Oxide
  • Substrates
  • gallium arsenide
  • Lattice constants
  2 Citations (Scopus)

  25 Downloads (Pure)

• Germanium on Sapphire By Wafer Bonding

  Baine, P., Gamble, H., Armstrong, M., McNeill, D., Mitchell, N., Low, Y. & Rainey, P., Dec 2008, In : Solid State Electronics. 52, 12, p. 1840-1844 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Germanium
  • Wafer bonding
  • Aluminum Oxide
  • germanium
  • sapphire
  11 Citations (Scopus)

  6 Downloads (Pure)

• Internal photoemission study on charge trapping behaviour in rapid thermal oxides on strained-Si/SiGe heterolayers

  Armstrong, M., Gamble, H., Bera, M. K., Mahata, C., Bhattacharya, S., Chakraborty, A. K. & Maiti, C. K., Sep 2008, In : Applied Surface Science. 255, p. 2971-2977 7 p.

  Research output: Contribution to journal › Article › peer-review
• 2007

  Investigation into the selectivity of CVD iron from Fe(CO)5 precursor on various metal and dielectric patterned substrates

  Armstrong, M., Bain, M., Gamble, H., Low, Y. & Montgomery, J., 25 Sep 2007, In : Surface and Coatings Technology. 201(21-23), 22-23 SPEC. ISS., p. 8998-9002 5 p.

  Research output: Contribution to journal › Article › peer-review

  6 Citations (Scopus)

• Laser annealing of sputtered silicon for wafer-bonding applications

  Hurley, R., Gamble, H., Jin, M., Armstrong, M., Ghita, M., McCullough, R., Adikaari, A. A. D. T., Henly, S. J. & Silva, S. R. P., Jan 2007, In : JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 9, 1, p. 121-126 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Wafer bonding
  • Silicon
  • laser annealing
  • Annealing
  • Lasers

• Multiple self-aligned iron nanowires by a dual selective chemical vapor deposition process

  Bien, D. C. S., Bain, M. F., Low, Y. H., Mitchell, N. S. J., Armstrong, M. B. & Gamble, H. S., 2007, In : Electrochemical and Solid-State Letters. 10, 9, p. H251-H253 3 p.

  Research output: Contribution to journal › Article › peer-review
  1 Citation (Scopus)
• 2006

  Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

  Wadsworth, H., Bhattacharya, S., McNeill, D., Ruddell, F., Armstrong, M., Gamble, H. & Denvir, D., Aug 2006, In : Materials Science in Semiconductor Processing. 9, 4-5 SPEC. ISS., p. 685-689 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Hafnium
  • Germanium
  • MOS capacitors
  • hafnium
  • Silicon Dioxide
  7 Citations (Scopus)

• Low Temperature Bonding of PECVD Silicon Dioxide Layers

  Baine, P., Bain, M., McNeill, D., Gamble, H. & Armstrong, M., Nov 2006, In : ECS Transactions. 3(6), 6, p. 165-173 9 p.

  Research output: Contribution to journal › Article › peer-review

  5 Citations (Scopus)

• Low temperature surface nitridation processes for dielectric-Ge interfaces

  Wadsworth, H. J., Bhattacharya, S., Ruddell, F. H., McNeill, D. W., Mitchell, N., Armstrong, B. M., Gamble, H. S. & Denvir, D., 01 Jan 2006, In : ECS Transactions. 3, 7, p. 531-537 7 p.

  Research output: Contribution to journal › Article › peer-review

  • Nitridation
  • Germanium
  • Electric properties
  • MOS capacitors
  • Nitrogen plasma

• Selective depostion of CVD iron on silicon dioxide and tungsten

  Armstrong, M., Baine, P., Bien, D., Gamble, H., Montgomery, J. & Low, Y., Nov 2006, In : Microelectronic Engineering. 83(11-12), p. 2229-2233 5 p.

  Research output: Contribution to journal › Article › peer-review
• 2005

  Cross-talk suppression in SOI substrates

  Armstrong, M., Baine, P., Gamble, H. & Linton, D., Sep 2005, In : SOLID-STATE ELECTRONICS. 9, 9 SPEC. ISS., p. 1461-1465 5 p.

  Research output: Contribution to journal › Article › peer-review

  6 Citations (Scopus)

• Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes

  Bain, M., Jin, M., Loh, S., Armstrong, M., Gamble, H. & McNeill, D., Feb 2005, In : IEEE Electron Device Letters. 26, 2, p. 72-74 3 p.

  Research output: Contribution to journal › Article › peer-review

  • Silicon
  • Silicides
  • MOS capacitors
  • Substrates
  • Carrier lifetime
  2 Citations (Scopus)

• SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers

  Bain, M., El Mubarek, H. A. W., Bonar, J. M., Wang, Y., Buiu, O., Gamble, H., Armstrong, M., Hemment, P. L. F., Hall, S. & Ashburn, P., Mar 2005, In : IEEE Transactions on Electron Devices. 52 (3), 3, p. 317-324 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Silicides
  • Silicon
  • Heterojunction bipolar transistors
  • silicides
  • insulators
  17 Citations (Scopus)

• SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers

  Armstrong, M., Bain, M. & Gamble, H., Mar 2005, In : IEEE Transactions on Energy Conversion. 52(3), p. 317-324 8 p.

  Research output: Contribution to journal › Article › peer-review
• 2004

  Composition and stress analysis in Si structures using micro-raman spectroscopy

  Armstrong, M. & Gamble, H., Sep 2004, In : Scanning. 25(5), 5, p. 235-239 5 p.

  Research output: Contribution to journal › Article › peer-review

  12 Citations (Scopus)

• Determination of band offsets in strained-Si heterolayers

  Armstrong, M. & Gamble, H., Sep 2004, In : Thin Solis Films. 462-463, SPEC. ISS., p. 80-84 5 p.

  Research output: Contribution to journal › Article › peer-review

  3 Citations (Scopus)

• Effect of deposition temperature on the formation of CoSi2 through the rapid thermal annealing of CVD cobalt

  Armstrong, M., Bain, M. & Gamble, H., Oct 2004, In : Microelectronic Engineering. 76(1-4), 1-4, p. 336-342 7 p.

  Research output: Contribution to journal › Article › peer-review

  2 Citations (Scopus)

• Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

  Srinivasan, G., Bain, M., Bhattacharya, S., Baine, P., Armstrong, M., Gamble, H. & McNeill, D., Dec 2004, In : Materials Science and Engineering B. 114-115, SPEC. ISS., p. 223-227 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Si-Ge alloys
  • germanium alloys
  • Tungsten
  • Silicides
  • silicon alloys
  7 Citations (Scopus)

• Ultralow Silicon Substrate Noise Crosstalk Using Metal Faraday Cages in an SOI Technology

  Stefanou, S., Hamel, J. S., Baine, P., Bain, M., Armstrong, M., Gamble, H., Kraft, M. & Kemhadjian, H. A., Mar 2004, In : IEEE Transactions on Electron Devices. 51(3), 3, p. 486-491 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Mixed signal integrated circuits
  • Silicon
  • Crosstalk
  • SOI (semiconductors)
  • crosstalk
  29 Citations (Scopus)
• 2003

  Low-temperature plasma enhanced chemical vapor deposition of tungsten and tungsten nitride

  Armstrong, M., Bain, M. & Gamble, H., May 2003, In : Journal of Materials Science: Materials in Electronics. 14, 5-7, p. 329-333 5 p.

  Research output: Contribution to journal › Article › peer-review
• 2002

  The deposition and characterisation of CVD tungsten silicide for applications in microelectronics

  Armstrong, M., Bain, M. & Gamble, H., Jan 2002, In : Vacuum. 64(3-4), 3-4, p. 227-232 6 p.

  Research output: Contribution to journal › Article › peer-review

  11 Citations (Scopus)
• 2001

  LPCVD of tungsten by selective deposition on silicon

  Li, F. X., Armstrong, M. & Gamble, H., Jun 2001, In : Journal of Materials Science: Materials in Electronics. 12(4/6), 4-6, p. 303-306 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Boron
  • Tungsten
  • Technology transfer
  • Silicon
  • Passivation
  3 Citations (Scopus)

• Novel materials for thermal via incorporation into SOI structures

  Baine, P., Choon, K. Y., Gamble, H., Armstrong, M. & Mitchell, N., Jun 2001, In : Journal of Materials Science: Materials in Electronics. 12(4/6), 4-6, p. 215-218 4 p.

  Research output: Contribution to journal › Article › peer-review
  3 Citations (Scopus)

• Silicon-on-insulator substrates with buried tungsten silicide layer

  Gamble, H., Armstrong, M., Baine, P., Bain, M. & McNeill, D., Apr 2001, In : Solid State Electronics. 45(4), 4, p. 551-557 7 p.

  Research output: Contribution to journal › Article › peer-review
  20 Citations (Scopus)
• 1999

  An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

  Len, V. S. C., Hurley, R., McCusker, N., McNeill, D., Armstrong, M. & Gamble, H., Jun 1999, In : Solid State Electronics. 43(6), p. 1045-1049 5 p.

  Research output: Contribution to journal › Article › peer-review

  27 Citations (Scopus)

• Polycrystalline silicon film growth in a SiF4/SiH4/H2 plasma

  Lee, B., Quinn, L. J., Baine, P. T., Mitchell, S. J. N., Armstrong, B. M. & Gamble, H. S., 11 Jan 1999, In : Thin Solid Films. 337, 1-2, p. 55-58 4 p.

  Research output: Contribution to journal › Article › peer-review

  • silicon tetrafluoride
  • Film growth
  • Polysilicon
  • silicon films
  • Plasmas
  9 Citations (Scopus)
• 1997

  Comparison of Si1-yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition

  Ray, S. K., McNeill, D., Gay, D. L., Maiti, C. K., Armstrong, A., Armstrong, M. & Gamble, H., Feb 1997, In : Thin Solid Films. 294(1-2), p. 149-152 4 p.

  Research output: Contribution to journal › Article › peer-review

  11 Citations (Scopus)
• 1996

  A rapid thermal processing system for the deposition of silicon carbide layers on silicon

  Montgomery, J., Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., 1996, In : International Journal of Materials & Product Technology. 11(1-2), p. 166-177 12 p.

  Research output: Contribution to journal › Article › peer-review
• 1992

  Novel materials for the semiconductor industry, deposited using a rapid thermal chemical vapour deposition system

  Montgomery, J., Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Sep 1992, In : Journal of Materials Processing Technology. 33(4), p. 481-492 12 p.

  Research output: Contribution to journal › Article › peer-review

  1 Citation (Scopus)
• 1991

  Epitaxial silicon growth by rapid thermal CVD

  McNeill, D., Liang, Y., Montgomery, J., Gamble, H. & Armstrong, M., Sep 1991, In : Journal De Physique Iv. 1(C2), p. 779-786 8 p.

  Research output: Contribution to journal › Article › peer-review