Si-Compatible Strain Engineered Staggered Gap Ge(Sn)/InGa As Non-Scale Tunnel Field Effect Transistors

Grüning, Myrta (PI)
Kohanoff, Jorge (CoI)

Northern Ireland Department for the Economy

Acronym	R3729TSL
Status	Finished
Effective start/end date	25/09/2015 → 31/03/2019

3 Article

Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies
Saladukha, D., Clavel, M. B., Murphy-Armando, P., Greene-Diniz, G., Gruening, M., Hudait, M. K. & Ochalski, T. J., 2018, In: Physical Review B. 97, 19, 12 p., 195304.
Research output: Contribution to journal › Article › peer-review

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First principles calculations of band offsets at heterovalent ε-Ge/InxAl1−xAs interfaces
Greene-Diniz, G. & Grüning, M., 22 Oct 2018, In: Physical Review Applied. 10, 16 p., 044052.
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Satellite valleys and strained band gap transition of bulk Ge: Impact of pseudopotential approximations on quasiparticle levels
Greene-Diniz, G., Correia de Abreu, J. C. & Gruening, M., 15 Jun 2018, In: Computational Materials Science. 149, p. 115-124
Research output: Contribution to journal › Article › peer-review

Open Access
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1 Citation (Scopus)

232 Downloads (Pure)