1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode

Zijun Bian, Katherine J. Rae, Adam F. McKenzie, Ben C. King, Nasser Babazadeh, Guangrui Li, Jonathan R. Orchard, Neil D. Gerrard, Stephen Thoms, Donald A. Maclaren, Richard J.E. Taylor, David Childs, Richard A. Hogg

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, operating under pulsed electrical drive at room temperature, and lasing at 1523 nm. This opens the route to the development of high efficiency InP based surface emitting lasers.
Original languageEnglish
Pages (from-to)1531-1534
Number of pages4
JournalIEEE Photonics Technology Letters
Volume32
Issue number24
DOIs
Publication statusPublished - 15 Dec 2020

Keywords

  • Photonic crystal
  • semiconductor growth
  • semiconductor lasers
  • surface emitting lasers

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