1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode

Zijun Bian; Katherine J. Rae; Adam F. McKenzie; Ben C. King; Nasser Babazadeh; Guangrui Li; Jonathan R. Orchard; Neil D. Gerrard; Stephen Thoms; Donald A. Maclaren; Richard J.E. Taylor; David Childs; Richard A. Hogg

doi:10.1109/LPT.2020.3039059

1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode

Zijun Bian, Katherine J. Rae, Adam F. McKenzie, Ben C. King, Nasser Babazadeh, Guangrui Li, Jonathan R. Orchard, Neil D. Gerrard, Stephen Thoms, Donald A. Maclaren, Richard J.E. Taylor, David Childs, Richard A. Hogg

School of Mathematics and Physics

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, operating under pulsed electrical drive at room temperature, and lasing at 1523 nm. This opens the route to the development of high efficiency InP based surface emitting lasers.

Original language	English
Pages (from-to)	1531-1534
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	32
Issue number	24
DOIs	https://doi.org/10.1109/LPT.2020.3039059
Publication status	Published - 15 Dec 2020

Keywords

Photonic crystal
semiconductor growth
semiconductor lasers
surface emitting lasers

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10.1109/LPT.2020.3039059Licence: Unspecified

Gallium Arsenide based photonic crystal surface emitting lasers
King, B. (Author), Hogg, R. (Supervisor), Childs, D. (Supervisor) & Pollard, R. (Supervisor), Dec 2021
Student thesis: Doctoral Thesis › Doctor of Philosophy

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title = "1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode",

abstract = "We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, operating under pulsed electrical drive at room temperature, and lasing at 1523 nm. This opens the route to the development of high efficiency InP based surface emitting lasers.",

keywords = "Photonic crystal, semiconductor growth, semiconductor lasers, surface emitting lasers",

author = "Zijun Bian and Rae, {Katherine J.} and McKenzie, {Adam F.} and King, {Ben C.} and Nasser Babazadeh and Guangrui Li and Orchard, {Jonathan R.} and Gerrard, {Neil D.} and Stephen Thoms and Maclaren, {Donald A.} and Taylor, {Richard J.E.} and David Childs and Hogg, {Richard A.}",

year = "2020",

month = dec,

day = "15",

doi = "10.1109/LPT.2020.3039059",

language = "English",

volume = "32",

pages = "1531--1534",

journal = "IEEE Photonics Technology Letters",

issn = "1941-0174",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "24",

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TY - JOUR

T1 - 1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode

AU - Bian, Zijun

AU - Rae, Katherine J.

AU - McKenzie, Adam F.

AU - King, Ben C.

AU - Babazadeh, Nasser

AU - Li, Guangrui

AU - Orchard, Jonathan R.

AU - Gerrard, Neil D.

AU - Thoms, Stephen

AU - Maclaren, Donald A.

AU - Taylor, Richard J.E.

AU - Childs, David

AU - Hogg, Richard A.

PY - 2020/12/15

Y1 - 2020/12/15

N2 - We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, operating under pulsed electrical drive at room temperature, and lasing at 1523 nm. This opens the route to the development of high efficiency InP based surface emitting lasers.

AB - We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, operating under pulsed electrical drive at room temperature, and lasing at 1523 nm. This opens the route to the development of high efficiency InP based surface emitting lasers.

KW - Photonic crystal

KW - semiconductor growth

KW - semiconductor lasers

KW - surface emitting lasers

U2 - 10.1109/LPT.2020.3039059

DO - 10.1109/LPT.2020.3039059

M3 - Article

SN - 1941-0174

VL - 32

SP - 1531

EP - 1534

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 24

ER -

1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode

Abstract

Keywords

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Student theses

Gallium Arsenide based photonic crystal surface emitting lasers

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