This paper presents the design and characterization of ultrafast wideband low-loss single-pole single-throw (SPST) and single-pole double-throw (SPDT) differential switches. The SPDT switch exhibits insertion loss of lower than 1.25 dB from 42 to 70 GHz and isolation of better than 20 dB from 40 to 65 GHz. Similar low-loss and broadband characteristics are also observed from the measured SPST switch. The proposed switch topologies adopting current-steering technique and implemented in 0.35 µm SiGe bipolar technology result in a switching time of only 75 ps. This suggests a maximum switching speed of 13 Gbps, the fastest ever reported at V-band.
|Number of pages||4|
|Publication status||Published - Sep 2011|
|Event||IET Seminar Active RF Devices, Circuits and Systems - Belfast, United Kingdom|
Duration: 01 Sep 2011 → 01 Sep 2011
|Conference||IET Seminar Active RF Devices, Circuits and Systems|
|Period||01/09/2011 → 01/09/2011|
Thian, M., & Fusco, V. (2011). 40-70 GHz 13 Gbps 1-dB loss SPST and SPDT differential switches in 0.35 μm SiGe technology. 11-14. Paper presented at IET Seminar Active RF Devices, Circuits and Systems, Belfast, United Kingdom. https://doi.org/10.1049/ic.2011.0208