A 120 GHz dielectric sensor in SiGe BiCMOS

K. Schmalz; J. Borngraber; M. Kaynak; W. Winkler; J. Wessel; M. Neshat; S. Safavi-Naeini

doi:10.1109/LMWC.2012.2234091

A 120 GHz dielectric sensor in SiGe BiCMOS

K. Schmalz
, J. Borngraber
, M. Kaynak
, W. Winkler
, J. Wessel
, M. Neshat
, S. Safavi-Naeini

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A highly sensitive 120 GHz integrated dielectric sensor in SiGe BiCMOS with back-side etching is presented. The sensor consists of a bandpass filter using a planar resonator, a 120 GHz VCO at the input, and a power detector at the output. The sensitivity of the stand-alone resonator and the sensor was tested by measuring the change in the detector output voltage and the shift in the frequency response of the resonator due to a dielectric sample placed over the resonator. Simulated and measured performance of the developed device are presented and discussed.

Original language	English
Pages (from-to)	46-48
Number of pages	9
Journal	IEEE Microwave and Wireless Components Letters
Volume	23
Issue number	1
Early online date	24 Dec 2012
DOIs	https://doi.org/10.1109/LMWC.2012.2234091
Publication status	Published - 01 Jan 2013
Externally published	Yes

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AU - Neshat, M.

AU - Safavi-Naeini, S.

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AB - A highly sensitive 120 GHz integrated dielectric sensor in SiGe BiCMOS with back-side etching is presented. The sensor consists of a bandpass filter using a planar resonator, a 120 GHz VCO at the input, and a power detector at the output. The sensitivity of the stand-alone resonator and the sensor was tested by measuring the change in the detector output voltage and the shift in the frequency response of the resonator due to a dielectric sample placed over the resonator. Simulated and measured performance of the developed device are presented and discussed.

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A 120 GHz dielectric sensor in SiGe BiCMOS

Abstract

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