A 2.0–3.0 GHz GaN HEMT-based high-efficiency rectifier using class-EFJ operating mode

Chenlu Wang; Junyi Luo; Zhiwei Zhang; Chao Gu; Haipeng Zhu; Luyu Zhang

doi:10.3390/electronics13142786

A 2.0–3.0 GHz GaN HEMT-based high-efficiency rectifier using class-EFJ operating mode

Chenlu Wang, Junyi Luo, Zhiwei Zhang, Chao Gu, Haipeng Zhu, Luyu Zhang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

29 Downloads (Pure)

Abstract

In this paper, a CGH40010F GaN-based wideband RF rectifier with high rectification efficiency is presented. A novel continuous class-EFJ-mode rectifier is constructed by combining a continuous class-J-mode rectifier and class-EF-mode rectifier under specific impedance conditions. This novel continuous class-EFJ-mode rectifier has high rectification efficiency and wide bandwidth at the same time. For validation, a wideband high-efficiency class-EFJ-mode rectifier functioning within the 2.0–3.0 GHz range is designed, fabricated, and measured. The measurements indicate that, with an input power of 40 dBm and a resistance of 72 Ω on the dc load, the implemented rectifier sustains a rectification efficiency exceeding 60% across its entire operational frequency band. Meanwhile, the dimensions of the circuits are only 3 cm × 3.1 cm.

Original language	English
Article number	2786
Number of pages	12
Journal	Electronics
Volume	13
Issue number	14
DOIs	https://doi.org/10.3390/electronics13142786
Publication status	Early online date - 16 Jul 2024

Access to Document

10.3390/electronics13142786Licence: CC BY

A 2.0–3.0 GHz GaN HEMT-Based High-Efficiency Rectifier Using Class-EFJ Operating Mode
© 2024 The Authors. This is an open access article published under a Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Final published version, 4.68 MBLicence: CC BY

Cite this

@article{310cb288208c4ffcb4a2bbd3d81bbe05,

title = "A 2.0–3.0 GHz GaN HEMT-based high-efficiency rectifier using class-EFJ operating mode",

abstract = "In this paper, a CGH40010F GaN-based wideband RF rectifier with high rectification efficiency is presented. A novel continuous class-EFJ-mode rectifier is constructed by combining a continuous class-J-mode rectifier and class-EF-mode rectifier under specific impedance conditions. This novel continuous class-EFJ-mode rectifier has high rectification efficiency and wide bandwidth at the same time. For validation, a wideband high-efficiency class-EFJ-mode rectifier functioning within the 2.0–3.0 GHz range is designed, fabricated, and measured. The measurements indicate that, with an input power of 40 dBm and a resistance of 72 Ω on the dc load, the implemented rectifier sustains a rectification efficiency exceeding 60\% across its entire operational frequency band. Meanwhile, the dimensions of the circuits are only 3 cm × 3.1 cm.",

author = "Chenlu Wang and Junyi Luo and Zhiwei Zhang and Chao Gu and Haipeng Zhu and Luyu Zhang",

year = "2024",

month = jul,

day = "16",

doi = "10.3390/electronics13142786",

language = "English",

volume = "13",

journal = "Electronics",

issn = "2079-9292",

publisher = "MDPI",

number = "14",

}

TY - JOUR

T1 - A 2.0–3.0 GHz GaN HEMT-based high-efficiency rectifier using class-EFJ operating mode

AU - Wang, Chenlu

AU - Luo, Junyi

AU - Zhang, Zhiwei

AU - Gu, Chao

AU - Zhu, Haipeng

AU - Zhang, Luyu

PY - 2024/7/16

Y1 - 2024/7/16

N2 - In this paper, a CGH40010F GaN-based wideband RF rectifier with high rectification efficiency is presented. A novel continuous class-EFJ-mode rectifier is constructed by combining a continuous class-J-mode rectifier and class-EF-mode rectifier under specific impedance conditions. This novel continuous class-EFJ-mode rectifier has high rectification efficiency and wide bandwidth at the same time. For validation, a wideband high-efficiency class-EFJ-mode rectifier functioning within the 2.0–3.0 GHz range is designed, fabricated, and measured. The measurements indicate that, with an input power of 40 dBm and a resistance of 72 Ω on the dc load, the implemented rectifier sustains a rectification efficiency exceeding 60% across its entire operational frequency band. Meanwhile, the dimensions of the circuits are only 3 cm × 3.1 cm.

AB - In this paper, a CGH40010F GaN-based wideband RF rectifier with high rectification efficiency is presented. A novel continuous class-EFJ-mode rectifier is constructed by combining a continuous class-J-mode rectifier and class-EF-mode rectifier under specific impedance conditions. This novel continuous class-EFJ-mode rectifier has high rectification efficiency and wide bandwidth at the same time. For validation, a wideband high-efficiency class-EFJ-mode rectifier functioning within the 2.0–3.0 GHz range is designed, fabricated, and measured. The measurements indicate that, with an input power of 40 dBm and a resistance of 72 Ω on the dc load, the implemented rectifier sustains a rectification efficiency exceeding 60% across its entire operational frequency band. Meanwhile, the dimensions of the circuits are only 3 cm × 3.1 cm.

U2 - 10.3390/electronics13142786

DO - 10.3390/electronics13142786

M3 - Article

SN - 2079-9292

VL - 13

JO - Electronics

JF - Electronics

IS - 14

M1 - 2786

ER -

A 2.0–3.0 GHz GaN HEMT-based high-efficiency rectifier using class-EFJ operating mode

Abstract

Access to Document

Fingerprint

Cite this