A 2.2 GHz High-Efficiency Third-Harmonic-Peaking Class-EF Power Amplifier

Ayman Barakat; Mury Thian; Vincent Fusco

A 2.2 GHz High-Efficiency Third-Harmonic-Peaking Class-EF Power Amplifier

Ayman Barakat, Mury Thian, Vincent Fusco

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Abstract

This paper presents the design and implementation of a low-voltage-stress Class-EF power amplifier (PA) with extended maximum operating frequency, named as ‘third-harmonic-peaking Class-EF PA’. A novel transmission-line load network is proposed to meet the Class-EF impedance requirements at the fundamental, all even harmonics, and third harmonic components. It also provides an impedance matching to a 50 Ω load. A more effective λ/8 open- and shorted-stub network is deployed at the drain of the transistor replacing the traditional λ/4 transmission line. Implemented using GaN HEMTs, the PA delivered 39.2 dBm output power with 80.5% drain efficiency and 71% PAE at 2.22 GHz.

Original language	English
Pages	1-2
Number of pages	2
Publication status	Published - 01 May 2014
Event	17th Research Colloguium on Communications and Radio Science into the 21st Century - Royal Irish Academy, Dublin, Ireland Duration: 30 Apr 2014 → 01 May 2014

Conference

Conference	17th Research Colloguium on Communications and Radio Science into the 21st Century
Country/Territory	Ireland
City	Dublin
Period	30/04/2014 → 01/05/2014

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A 2.2GHz high frequency third-harmonic-peakingAccepted author manuscript, 534 KB

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title = "A 2.2 GHz High-Efficiency Third-Harmonic-Peaking Class-EF Power Amplifier",

abstract = "This paper presents the design and implementation of a low-voltage-stress Class-EF power amplifier (PA) with extended maximum operating frequency, named as {\textquoteleft}third-harmonic-peaking Class-EF PA{\textquoteright}. A novel transmission-line load network is proposed to meet the Class-EF impedance requirements at the fundamental, all even harmonics, and third harmonic components. It also provides an impedance matching to a 50 Ω load. A more effective λ/8 open- and shorted-stub network is deployed at the drain of the transistor replacing the traditional λ/4 transmission line. Implemented using GaN HEMTs, the PA delivered 39.2 dBm output power with 80.5% drain efficiency and 71% PAE at 2.22 GHz.",

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AU - Barakat, Ayman

AU - Thian, Mury

AU - Fusco, Vincent

PY - 2014/5/1

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N2 - This paper presents the design and implementation of a low-voltage-stress Class-EF power amplifier (PA) with extended maximum operating frequency, named as ‘third-harmonic-peaking Class-EF PA’. A novel transmission-line load network is proposed to meet the Class-EF impedance requirements at the fundamental, all even harmonics, and third harmonic components. It also provides an impedance matching to a 50 Ω load. A more effective λ/8 open- and shorted-stub network is deployed at the drain of the transistor replacing the traditional λ/4 transmission line. Implemented using GaN HEMTs, the PA delivered 39.2 dBm output power with 80.5% drain efficiency and 71% PAE at 2.22 GHz.

AB - This paper presents the design and implementation of a low-voltage-stress Class-EF power amplifier (PA) with extended maximum operating frequency, named as ‘third-harmonic-peaking Class-EF PA’. A novel transmission-line load network is proposed to meet the Class-EF impedance requirements at the fundamental, all even harmonics, and third harmonic components. It also provides an impedance matching to a 50 Ω load. A more effective λ/8 open- and shorted-stub network is deployed at the drain of the transistor replacing the traditional λ/4 transmission line. Implemented using GaN HEMTs, the PA delivered 39.2 dBm output power with 80.5% drain efficiency and 71% PAE at 2.22 GHz.

M3 - Paper

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T2 - 17th Research Colloguium on Communications and Radio Science into the 21st Century

Y2 - 30 April 2014 through 1 May 2014

ER -

A 2.2 GHz High-Efficiency Third-Harmonic-Peaking Class-EF Power Amplifier

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