A 5-GHz Class-E3F2 Power Amplifier with 51% PAE and 21-dBm Output Power on 65nm CMOS

Matthew Love, Mury Thian, Andrei Grebennikov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
381 Downloads (Pure)

Abstract

The design and simulation of a Class-E3F2 power amplifier using 65nm CMOS technology are detailed in this paper. The Class-EF amplifier combines aspects of the Class-E and -F load networks such as the harmonic terminations from the Class F and the use of a shunt capacitance at the drain in the Class E. A mixed-voltage cascode topology is used for the output stage to enable the use of fast low-voltage transistors with a higher supply voltage. To satisfy the Class-EF conditions the load network is designed to provide a short and open circuit to the second and third harmonic signals, respectively. The driver stage utilizes an Inverse Class-B topology to deliver a half-wave rectified sine to the output stage. The simulated amplifier achieved a power-added efficiency of 51% and a gain of 26 dB at an output power of 21 dBm. The second and third harmonic components were attenuated to -47.6 dBc and -79.3 dBc, respectively.
Original languageEnglish
Title of host publicationProceedings of the 2017 IEEE Wireless and Microwave Technology Conference
Publisher IEEE
Number of pages4
ISBN (Electronic)978-1-5090-4375-0, 978-1-5090-4374-3
ISBN (Print)978-1-5090-4376-7
DOIs
Publication statusPublished - 18 May 2017
EventIEEE Wireless and Microwave Technology Conference - Florida, United States
Duration: 24 Apr 201725 Apr 2017

Conference

ConferenceIEEE Wireless and Microwave Technology Conference
Abbreviated titleWAMICON
CountryUnited States
CityFlorida
Period24/04/201725/04/2017

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  • Prizes

    Best Student Paper Award at IEEE WAMICON 2017

    Matthew Love (Recipient), Mury Thian (Recipient) & Andrei Grebennikov (Recipient), 24 Apr 2017

    Prize: Prize (including medals and awards)

    Cite this

    Love, M., Thian, M., & Grebennikov, A. (2017). A 5-GHz Class-E3F2 Power Amplifier with 51% PAE and 21-dBm Output Power on 65nm CMOS. In Proceedings of the 2017 IEEE Wireless and Microwave Technology Conference IEEE . https://doi.org/10.1109/WAMICON.2017.7930264