A Compact V-band power detector

Jian Zhang; Vincent Fusco

A Compact V-band power detector

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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A compact V-band active power detector using Infineon 0.35 µm SiGe HBT process (fT/fmax =170/250 GHz) is described. The total chip area is only 0.35×0.8 mm2 including all pads. This design exhibits a dynamic range larger than 20 dB over the frequency range from 55 GHz to 67 GHz. It also offers a simple and low-power application potential as an envelop detector in multi-Gbps high data rate demodulators for OOK/ASK etc.

Original language	English
Title of host publication	Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Place of Publication	Amsterdam
Pages	528-531
Number of pages	4
ISBN (Electronic)	978-2-87487-026-2
Publication status	Published - Oct 2012

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@inproceedings{a9becc837f944e4a94b88b557a83f7e6,

title = "A Compact V-band power detector",

abstract = "EmailPrintRequest Permissions A compact V-band active power detector using Infineon 0.35 µm SiGe HBT process (fT/fmax =170/250 GHz) is described. The total chip area is only 0.35×0.8 mm2 including all pads. This design exhibits a dynamic range larger than 20 dB over the frequency range from 55 GHz to 67 GHz. It also offers a simple and low-power application potential as an envelop detector in multi-Gbps high data rate demodulators for OOK/ASK etc.",

author = "Jian Zhang and Vincent Fusco",

year = "2012",

month = oct,

language = "English",

isbn = "978-1-4673-2302-4 ",

pages = "528--531",

booktitle = "Microwave Integrated Circuits Conference (EuMIC), 2012 7th European",

}

TY - GEN

T1 - A Compact V-band power detector

AU - Zhang, Jian

AU - Fusco, Vincent

PY - 2012/10

Y1 - 2012/10

N2 - EmailPrintRequest Permissions A compact V-band active power detector using Infineon 0.35 µm SiGe HBT process (fT/fmax =170/250 GHz) is described. The total chip area is only 0.35×0.8 mm2 including all pads. This design exhibits a dynamic range larger than 20 dB over the frequency range from 55 GHz to 67 GHz. It also offers a simple and low-power application potential as an envelop detector in multi-Gbps high data rate demodulators for OOK/ASK etc.

AB - EmailPrintRequest Permissions A compact V-band active power detector using Infineon 0.35 µm SiGe HBT process (fT/fmax =170/250 GHz) is described. The total chip area is only 0.35×0.8 mm2 including all pads. This design exhibits a dynamic range larger than 20 dB over the frequency range from 55 GHz to 67 GHz. It also offers a simple and low-power application potential as an envelop detector in multi-Gbps high data rate demodulators for OOK/ASK etc.

M3 - Conference contribution

SN - 978-1-4673-2302-4

SP - 528

EP - 531

BT - Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

CY - Amsterdam

ER -

A Compact V-band power detector

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