A compact V-band active power detector using Infineon 0.35 µm SiGe HBT process (fT/fmax =170/250 GHz) is described. The total chip area is only 0.35×0.8 mm2 including all pads. This design exhibits a dynamic range larger than 20 dB over the frequency range from 55 GHz to 67 GHz. It also offers a simple and low-power application potential as an envelop detector in multi-Gbps high data rate demodulators for OOK/ASK etc.
|Title of host publication||Microwave Integrated Circuits Conference (EuMIC), 2012 7th European|
|Place of Publication||Amsterdam|
|Number of pages||4|
|Publication status||Published - Oct 2012|