The piezoresistance effect is defined as change in resistance due to applied stress. Silicon has a relatively large piezoresistance effect which has been known since 1954. A four point bending setup is proposed and designed to analyze the piezoresistance effect in p-type silicon. This setup is used to apply uniform and uniaxial stress along the <110> crystal direction. The main aim of this work is to investigate the piezoresistive characteristic of p-type resistors as a function of doping concentrations using COMSOL Multiphysics. Simulation results are compared with experimental data.
|Number of pages||5|
|Publication status||Published - 2013|
|Event||Proceedings of 2013 COMSOL Conference - Rotterdam, Netherlands|
Duration: 23 Oct 2015 → 25 Oct 2015
|Conference||Proceedings of 2013 COMSOL Conference|
|Period||23/10/2015 → 25/10/2015|