A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup

Teng Hwang Tan; Neil Mitchell; David McNeill; Haydn Wadsworth; Sam Strahan

A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup

Teng Hwang Tan, Neil Mitchell, David McNeill, Haydn Wadsworth, Sam Strahan

Research output: Contribution to conference › Paper

Abstract

The piezoresistance effect is defined as change in resistance due to applied stress. Silicon has a relatively large piezoresistance effect which has been known since 1954. A four point bending setup is proposed and designed to analyze the piezoresistance effect in p-type silicon. This setup is used to apply uniform and uniaxial stress along the <110> crystal direction. The main aim of this work is to investigate the piezoresistive characteristic of p-type resistors as a function of doping concentrations using COMSOL Multiphysics. Simulation results are compared with experimental data.

Original language	English
Number of pages	5
Publication status	Published - 2013
Event	Proceedings of 2013 COMSOL Conference - Rotterdam, Netherlands Duration: 23 Oct 2015 → 25 Oct 2015

Conference

Conference	Proceedings of 2013 COMSOL Conference
Country/Territory	Netherlands
City	Rotterdam
Period	23/10/2015 → 25/10/2015

Cite this

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title = "A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup",

abstract = "The piezoresistance effect is defined as change in resistance due to applied stress. Silicon has a relatively large piezoresistance effect which has been known since 1954. A four point bending setup is proposed and designed to analyze the piezoresistance effect in p-type silicon. This setup is used to apply uniform and uniaxial stress along the <110> crystal direction. The main aim of this work is to investigate the piezoresistive characteristic of p-type resistors as a function of doping concentrations using COMSOL Multiphysics. Simulation results are compared with experimental data. ",

author = "Tan, {Teng Hwang} and Neil Mitchell and David McNeill and Haydn Wadsworth and Sam Strahan",

year = "2013",

language = "English",

note = "Proceedings of 2013 COMSOL Conference ; Conference date: 23-10-2015 Through 25-10-2015",

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TY - CONF

T1 - A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup

AU - Tan, Teng Hwang

AU - Mitchell, Neil

AU - McNeill, David

AU - Wadsworth, Haydn

AU - Strahan, Sam

PY - 2013

Y1 - 2013

N2 - The piezoresistance effect is defined as change in resistance due to applied stress. Silicon has a relatively large piezoresistance effect which has been known since 1954. A four point bending setup is proposed and designed to analyze the piezoresistance effect in p-type silicon. This setup is used to apply uniform and uniaxial stress along the <110> crystal direction. The main aim of this work is to investigate the piezoresistive characteristic of p-type resistors as a function of doping concentrations using COMSOL Multiphysics. Simulation results are compared with experimental data.

AB - The piezoresistance effect is defined as change in resistance due to applied stress. Silicon has a relatively large piezoresistance effect which has been known since 1954. A four point bending setup is proposed and designed to analyze the piezoresistance effect in p-type silicon. This setup is used to apply uniform and uniaxial stress along the <110> crystal direction. The main aim of this work is to investigate the piezoresistive characteristic of p-type resistors as a function of doping concentrations using COMSOL Multiphysics. Simulation results are compared with experimental data.

M3 - Paper

T2 - Proceedings of 2013 COMSOL Conference

Y2 - 23 October 2015 through 25 October 2015

ER -

A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup

Abstract

Conference

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