A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup

Teng Hwang Tan, Neil Mitchell, David McNeill, Haydn Wadsworth, Sam Strahan

Research output: Contribution to conferencePaper

Abstract

The piezoresistance effect is defined as change in resistance due to applied stress. Silicon has a relatively large piezoresistance effect which has been known since 1954. A four point bending setup is proposed and designed to analyze the piezoresistance effect in p-type silicon. This setup is used to apply uniform and uniaxial stress along the <110> crystal direction. The main aim of this work is to investigate the piezoresistive characteristic of p-type resistors as a function of doping concentrations using COMSOL Multiphysics. Simulation results are compared with experimental data.
Original languageEnglish
Number of pages5
Publication statusPublished - 2013
EventProceedings of 2013 COMSOL Conference - Rotterdam, Netherlands
Duration: 23 Oct 201525 Oct 2015

Conference

ConferenceProceedings of 2013 COMSOL Conference
CountryNetherlands
CityRotterdam
Period23/10/201525/10/2015

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  • Cite this

    Tan, T. H., Mitchell, N., McNeill, D., Wadsworth, H., & Strahan, S. (2013). A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup. Paper presented at Proceedings of 2013 COMSOL Conference, Rotterdam, Netherlands.