TY - JOUR
T1 - A Transistor-based Dual-band High Efficiency Rectifier with Dual Polarity Modes
AU - Zhang, Zhiwei
AU - Fusco, Vincent
AU - Cheng, Zhiqun
AU - Buchanan, Neil
AU - Gu, Chao
PY - 2021/11/13
Y1 - 2021/11/13
N2 - This letter proposes a dual-band high-efficiency rectifier using a GaN transistor. Positive polarity and negative polarity modes are set at f1 , and f2 , respectively. Then, the rectifier operation at f1 and f2 is realized upon adjusting only the phase of the corresponding feedback loop. This releases the limitation that the original power amplifier (PA) must be dual-band operation. In addition, class-F harmonic control theory is used to enhance efficiency. Moreover, the proposed technique has no frequency dependence and can be used to achieve arbitrary frequency ratios. To verify the effectiveness of the proposed method, a high-efficiency rectifier operating at 1.9 and 2.4 GHz is designed and fabricated using a CGH40010F GaN HEMT. Measurements illustrate that the implemented rectifier can realize an efficiency of over 75% at 1.9 GHz and 2.4 GHz when an input power of 40 dBm is applied and the dc load is 70 Ω . Also, the size of circuit is only 4.7 cm x 3.4 cm.
AB - This letter proposes a dual-band high-efficiency rectifier using a GaN transistor. Positive polarity and negative polarity modes are set at f1 , and f2 , respectively. Then, the rectifier operation at f1 and f2 is realized upon adjusting only the phase of the corresponding feedback loop. This releases the limitation that the original power amplifier (PA) must be dual-band operation. In addition, class-F harmonic control theory is used to enhance efficiency. Moreover, the proposed technique has no frequency dependence and can be used to achieve arbitrary frequency ratios. To verify the effectiveness of the proposed method, a high-efficiency rectifier operating at 1.9 and 2.4 GHz is designed and fabricated using a CGH40010F GaN HEMT. Measurements illustrate that the implemented rectifier can realize an efficiency of over 75% at 1.9 GHz and 2.4 GHz when an input power of 40 dBm is applied and the dc load is 70 Ω . Also, the size of circuit is only 4.7 cm x 3.4 cm.
U2 - 10.1109/LMWC.2021.3121145
DO - 10.1109/LMWC.2021.3121145
M3 - Letter
SN - 1531-1309
VL - 32
SP - 169
EP - 172
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 2
ER -