An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

V.S.C. Len, Richard Hurley, N. McCusker, David McNeill, Mervyn Armstrong, Harold Gamble

Research output: Contribution to journalArticle

27 Citations (Scopus)
Original languageEnglish
Pages (from-to)1045-1049
Number of pages5
JournalSolid State Electronics
Volume43(6)
Publication statusPublished - Jun 1999

Cite this