An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

V.S.C. Len; Richard Hurley; N. McCusker; David McNeill; Mervyn Armstrong; Harold Gamble

An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

V.S.C. Len, Richard Hurley, N. McCusker, David McNeill, Mervyn Armstrong, Harold Gamble

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1045-1049
Number of pages	5
Journal	Solid State Electronics
Volume	43(6)
Publication status	Published - Jun 1999

Cite this

@article{e9ac373b63ae4fb58bab0cd1504d810e,

title = "An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures",

author = "V.S.C. Len and Richard Hurley and N. McCusker and David McNeill and Mervyn Armstrong and Harold Gamble",

year = "1999",

month = jun,

language = "English",

volume = "43(6)",

pages = "1045--1049",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

AU - Len, V.S.C.

AU - Hurley, Richard

AU - McCusker, N.

AU - McNeill, David

AU - Armstrong, Mervyn

AU - Gamble, Harold

PY - 1999/6

Y1 - 1999/6

M3 - Article

VL - 43(6)

SP - 1045

EP - 1049

JO - Solid State Electronics

JF - Solid State Electronics

SN - 0038-1101

ER -