Analog/RF Performance of sub-100 nm SOI MOSFETs with Non-Classical Gate-Source/Drain Underlap Channel Design

Abhinav Kranti, R Rashmi, S. Burignat, J.P. Raskin, Alastair Armstrong

Research output: Contribution to conference › Paper

Original language	English
Pages	45-48
Number of pages	4
Publication status	Published - Jan 2010
Event	10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF2010) - New Orleans, La, United States Duration: 01 Jan 2010 → 01 Jan 2010

Conference	10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF2010)
Country/Territory	United States
City	New Orleans, La
Period	01/01/2010 → 01/01/2010

Cite this

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title = "Analog/RF Performance of sub-100 nm SOI MOSFETs with Non-Classical Gate-Source/Drain Underlap Channel Design",

author = "Abhinav Kranti and R Rashmi and S. Burignat and J.P. Raskin and Alastair Armstrong",

year = "2010",

month = jan,

language = "English",

pages = "45--48",

note = "10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF2010) ; Conference date: 01-01-2010 Through 01-01-2010",

}

TY - CONF

T1 - Analog/RF Performance of sub-100 nm SOI MOSFETs with Non-Classical Gate-Source/Drain Underlap Channel Design

AU - Kranti, Abhinav

AU - Rashmi, R

AU - Burignat, S.

AU - Raskin, J.P.

AU - Armstrong, Alastair

PY - 2010/1

Y1 - 2010/1

M3 - Paper

SP - 45

EP - 48

T2 - 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF2010)

Y2 - 1 January 2010 through 1 January 2010

ER -