Analog/RF Performance of sub-100 nm SOI MOSFETs with Non-Classical Gate-Source/Drain Underlap Channel Design

Abhinav Kranti, R Rashmi, S. Burignat, J.P. Raskin, Alastair Armstrong

Research output: Contribution to conferencePaper

16 Citations (Scopus)
Original languageEnglish
Pages45-48
Number of pages4
Publication statusPublished - Jan 2010
Event10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF2010) - New Orleans, La, United States
Duration: 01 Jan 201001 Jan 2010

Conference

Conference10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF2010)
CountryUnited States
CityNew Orleans, La
Period01/01/201001/01/2010

Cite this

Kranti, A., Rashmi, R., Burignat, S., Raskin, J. P., & Armstrong, A. (2010). Analog/RF Performance of sub-100 nm SOI MOSFETs with Non-Classical Gate-Source/Drain Underlap Channel Design. 45-48. Paper presented at 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF2010), New Orleans, La, United States.