Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

Drew Edelberg; Daniel  Rhodes; Alexander  Kerelsky; Bumho Kim; Jue Wang; Amirali  Zangiabadi; Chanul  Kim; Antony Abhinandan; Jenny  Ardelean; Declan Scullion; Lior Embon; Rui  Zu; Elton J. G. Santos; Luis Balicas; Chris  Marianetti; Katayun Barmak; Xiaoyang  Zhu; James Hone; Abhay N. Pasupathy

doi:10.1021/acs.nanolett.9b00985

Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

Drew Edelberg, Daniel Rhodes, Alexander Kerelsky, Bumho Kim, Jue Wang, Amirali Zangiabadi, Chanul Kim, Antony Abhinandan, Jenny Ardelean, Declan Scullion, Lior Embon, Rui Zu, Elton J. G. Santos, Luis Balicas, Chris Marianetti, Katayun Barmak, Xiaoyang Zhu, James Hone, Abhay N. Pasupathy

School of Mathematics and Physics

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Abstract

Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above 1013 /cm2 to below 1011 /cm2. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.

Original language	English
Journal	Nano Letters
Early online date	05 Jun 2019
DOIs	https://doi.org/10.1021/acs.nanolett.9b00985
Publication status	Early online date - 05 Jun 2019

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Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control
Copyright © 2019 American Chemical Society. This work is made available online in accordance with the publisher’s policies. Please refer to any applicable terms of use of the publisher
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Edelberg, D., Rhodes, D., Kerelsky, A., Kim, B., Wang, J., Zangiabadi, A., Kim, C., Abhinandan, A., Ardelean, J., Scullion, D., Embon, L., Zu, R., Santos, E. J. G., Balicas, L., Marianetti, C., Barmak, K., Zhu, X., Hone, J., & Pasupathy, A. N. (2019). Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control. Nano Letters. https://doi.org/10.1021/acs.nanolett.9b00985

@article{f4baa754218b44b991d40e53333efce8,

title = "Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control",

abstract = "Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above 1013 /cm2 to below 1011 /cm2. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.",

author = "Drew Edelberg and Daniel Rhodes and Alexander Kerelsky and Bumho Kim and Jue Wang and Amirali Zangiabadi and Chanul Kim and Antony Abhinandan and Jenny Ardelean and Declan Scullion and Lior Embon and Rui Zu and Santos, {Elton J. G.} and Luis Balicas and Chris Marianetti and Katayun Barmak and Xiaoyang Zhu and James Hone and Pasupathy, {Abhay N.}",

year = "2019",

month = jun,

day = "5",

doi = "10.1021/acs.nanolett.9b00985",

language = "English",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

}

Edelberg, D, Rhodes, D, Kerelsky, A, Kim, B, Wang, J, Zangiabadi, A, Kim, C, Abhinandan, A, Ardelean, J, Scullion, D, Embon, L, Zu, R, Santos, EJG, Balicas, L, Marianetti, C, Barmak, K, Zhu, X, Hone, J & Pasupathy, AN 2019, 'Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control', Nano Letters. https://doi.org/10.1021/acs.nanolett.9b00985

TY - JOUR

T1 - Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

AU - Edelberg, Drew

AU - Rhodes, Daniel

AU - Kerelsky, Alexander

AU - Kim, Bumho

AU - Wang, Jue

AU - Zangiabadi, Amirali

AU - Kim, Chanul

AU - Abhinandan, Antony

AU - Ardelean, Jenny

AU - Scullion, Declan

AU - Embon, Lior

AU - Zu, Rui

AU - Santos, Elton J. G.

AU - Balicas, Luis

AU - Marianetti, Chris

AU - Barmak, Katayun

AU - Zhu, Xiaoyang

AU - Hone, James

AU - Pasupathy, Abhay N.

PY - 2019/6/5

Y1 - 2019/6/5

N2 - Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above 1013 /cm2 to below 1011 /cm2. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.

AB - Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above 1013 /cm2 to below 1011 /cm2. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.

U2 - 10.1021/acs.nanolett.9b00985

DO - 10.1021/acs.nanolett.9b00985

M3 - Article

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

ER -

Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

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