Back gate effects in N-channel monocrystalline silicon devices-on-glass and their suppression by boron ion implantation

Paul Baine, Neil Mitchell, Harold Gamble, Mervyn Armstrong

Research output: Contribution to conferencePaper

Original languageEnglish
Pages369-374
Number of pages6
Publication statusPublished - Apr 1999
EventSymposium on Flat-Panel Displays and Sensors-Principles, Materials and Processes held at the 1999 MRS Spring Meeting - San Francisco, United States
Duration: 01 Apr 200001 Apr 2000

Conference

ConferenceSymposium on Flat-Panel Displays and Sensors-Principles, Materials and Processes held at the 1999 MRS Spring Meeting
CountryUnited States
CitySan Francisco
Period01/04/200001/04/2000

Cite this

Baine, P., Mitchell, N., Gamble, H., & Armstrong, M. (1999). Back gate effects in N-channel monocrystalline silicon devices-on-glass and their suppression by boron ion implantation. 369-374. Paper presented at Symposium on Flat-Panel Displays and Sensors-Principles, Materials and Processes held at the 1999 MRS Spring Meeting, San Francisco, United States.