Barrier characteristics of PtSi/p-Si schottky diodes as determined from I-V-T measurements

PG McCafferty*, A Sellai, P Dawson, H Elabd

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The current-voltage-temperature characteristics of PtSi/p-Si Schottky barrier diodes were measured in the temperature range 60-115 K. Deviation of the ideality factor from unity below 80 K may be modelled using the so-called T-0 parameter with T-0 = 18 K. It is also shown that the curvature in the Richardson plots may be remedied by using the flatband rather than the zero-bias saturation current density. Physically, the departure from ideality is interpreted in terms of an inhomogeneous Schottky contact. Here we determine a mean barrier height at T = 0 K, phi(b)(-0) = 223 mV, with an (assumed) Gaussian distribution of standard deviation sigma(phi) = 12.5 mV. These data are correlated with the zero-bias barrier height, phi(j)(0) = 192 mV (at T = 90 K), the photoresponse barrier height, phi(ph) = 205 mV, and the flatband barrier height, phi(fb) = 214 mV. Finally, the temperature coefficient of the flatband barrier was found to be -0.121 mV K-1, which is approximately equal to 1/2(dE(g)(i)/dT), thus suggesting that the Fermi level at the interface is pinned to the middle of the band gap.

Original languageEnglish
Pages (from-to)583-592
Number of pages10
JournalSolid State Electronics
Volume39
Issue number4
Publication statusPublished - Apr 1996

Keywords

  • SILICIDE-SILICON INTERFACES
  • TEMPERATURE-DEPENDENCE
  • N-TYPE
  • HEIGHT
  • INHOMOGENEITIES
  • CONTACTS
  • MECHANISMS
  • ANOMALIES
  • STATES

Cite this

McCafferty, PG., Sellai, A., Dawson, P., & Elabd, H. (1996). Barrier characteristics of PtSi/p-Si schottky diodes as determined from I-V-T measurements. Solid State Electronics, 39(4), 583-592.