BESOI using a silicon germanium etch stop

X. Li, D.L. Gay, David McNeill, Mervyn Armstrong, Harold Gamble

Research output: Contribution to conferencePaper

Original languageEnglish
Pages313-320
Number of pages8
Publication statusPublished - Sep 1997
EventProceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV - Paris, France
Duration: 01 Sep 199701 Sep 1997

Conference

ConferenceProceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV
CountryFrance
CityParis
Period01/09/199701/09/1997

Cite this

Li, X., Gay, D. L., McNeill, D., Armstrong, M., & Gamble, H. (1997). BESOI using a silicon germanium etch stop. 313-320. Paper presented at Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV, Paris, France.