BESOI using a silicon germanium etch stop

X. Li, D.L. Gay, David McNeill, Mervyn Armstrong, Harold Gamble

Research output: Contribution to conference › Paper

Original language	English
Pages	313-320
Number of pages	8
Publication status	Published - Sep 1997
Event	192nd Electrochemical Society Meeting - Paris, France Duration: 01 Sep 1997 → 05 Sep 1997

Conference	192nd Electrochemical Society Meeting
Abbreviated title	ECS
Country/Territory	France
City	Paris
Period	01/09/1997 → 05/09/1997

Cite this

@conference{7ca04c697fec4cb8b89daf87188f48ec,

title = "BESOI using a silicon germanium etch stop",

author = "X. Li and D.L. Gay and David McNeill and Mervyn Armstrong and Harold Gamble",

year = "1997",

month = sep,

language = "English",

pages = "313--320",

note = "192nd Electrochemical Society Meeting, ECS ; Conference date: 01-09-1997 Through 05-09-1997",

}