BESOI using a silicon germanium etch stop

X. Li; D.L. Gay; David McNeill; Mervyn Armstrong; Harold Gamble

BESOI using a silicon germanium etch stop

X. Li, D.L. Gay, David McNeill, Mervyn Armstrong, Harold Gamble

Research output: Contribution to conference › Paper

Original language	English
Pages	313-320
Number of pages	8
Publication status	Published - Sep 1997
Event	Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV - Paris, France Duration: 01 Sep 1997 → 01 Sep 1997

Conference

Conference	Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV
Country	France
City	Paris
Period	01/09/1997 → 01/09/1997

Cite this

Li, X., Gay, D. L., McNeill, D., Armstrong, M., & Gamble, H. (1997). BESOI using a silicon germanium etch stop. 313-320. Paper presented at Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV, Paris, France.

@conference{7ca04c697fec4cb8b89daf87188f48ec,

title = "BESOI using a silicon germanium etch stop",

author = "X. Li and D.L. Gay and David McNeill and Mervyn Armstrong and Harold Gamble",

year = "1997",

month = sep,

language = "English",

pages = "313--320",

note = "Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV ; Conference date: 01-09-1997 Through 01-09-1997",

}