BESOI using a silicon germanium etch stop

X. Li, D.L. Gay, David McNeill, Mervyn Armstrong, Harold Gamble

Research output: Contribution to conferencePaper

LanguageEnglish
Pages313-320
Number of pages8
Publication statusPublished - Sep 1997
EventProceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV - Paris, France
Duration: 01 Sep 199701 Sep 1997

Conference

ConferenceProceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV
CountryFrance
CityParis
Period01/09/199701/09/1997

Cite this

Li, X., Gay, D. L., McNeill, D., Armstrong, M., & Gamble, H. (1997). BESOI using a silicon germanium etch stop. 313-320. Paper presented at Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV, Paris, France.
Li, X. ; Gay, D.L. ; McNeill, David ; Armstrong, Mervyn ; Gamble, Harold. / BESOI using a silicon germanium etch stop. Paper presented at Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV, Paris, France.8 p.
@conference{7ca04c697fec4cb8b89daf87188f48ec,
title = "BESOI using a silicon germanium etch stop",
author = "X. Li and D.L. Gay and David McNeill and Mervyn Armstrong and Harold Gamble",
year = "1997",
month = "9",
language = "English",
pages = "313--320",
note = "Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV ; Conference date: 01-09-1997 Through 01-09-1997",

}

Li, X, Gay, DL, McNeill, D, Armstrong, M & Gamble, H 1997, 'BESOI using a silicon germanium etch stop' Paper presented at Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV, Paris, France, 01/09/1997 - 01/09/1997, pp. 313-320.

BESOI using a silicon germanium etch stop. / Li, X.; Gay, D.L.; McNeill, David; Armstrong, Mervyn; Gamble, Harold.

1997. 313-320 Paper presented at Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV, Paris, France.

Research output: Contribution to conferencePaper

TY - CONF

T1 - BESOI using a silicon germanium etch stop

AU - Li, X.

AU - Gay, D.L.

AU - McNeill, David

AU - Armstrong, Mervyn

AU - Gamble, Harold

PY - 1997/9

Y1 - 1997/9

M3 - Paper

SP - 313

EP - 320

ER -

Li X, Gay DL, McNeill D, Armstrong M, Gamble H. BESOI using a silicon germanium etch stop. 1997. Paper presented at Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV, Paris, France.