| Language | English |
|---|---|
| Pages | 313-320 |
| Number of pages | 8 |
| Publication status | Published - Sep 1997 |
| Event | Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV - Paris, France Duration: 01 Sep 1997 → 01 Sep 1997 |
Conference
| Conference | Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV |
|---|---|
| Country | France |
| City | Paris |
| Period | 01/09/1997 → 01/09/1997 |
Cite this
Li, X., Gay, D. L., McNeill, D., Armstrong, M., & Gamble, H. (1997). BESOI using a silicon germanium etch stop. 313-320. Paper presented at Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV, Paris, France.
@conference{7ca04c697fec4cb8b89daf87188f48ec,
title = "BESOI using a silicon germanium etch stop",
author = "X. Li and D.L. Gay and David McNeill and Mervyn Armstrong and Harold Gamble",
year = "1997",
month = "9",
language = "English",
pages = "313--320",
note = "Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV ; Conference date: 01-09-1997 Through 01-09-1997",
}
Li, X, Gay, DL, McNeill, D, Armstrong, M & Gamble, H 1997, 'BESOI using a silicon germanium etch stop' Paper presented at Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV, Paris, France, 01/09/1997 - 01/09/1997, pp. 313-320.
BESOI using a silicon germanium etch stop. / Li, X.; Gay, D.L.; McNeill, David; Armstrong, Mervyn; Gamble, Harold.
1997. 313-320 Paper presented at Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV, Paris, France.Research output: Contribution to conference › Paper
TY - CONF
T1 - BESOI using a silicon germanium etch stop
AU - Li, X.
AU - Gay, D.L.
AU - McNeill, David
AU - Armstrong, Mervyn
AU - Gamble, Harold
PY - 1997/9
Y1 - 1997/9
M3 - Paper
SP - 313
EP - 320
ER -
Li X, Gay DL, McNeill D, Armstrong M, Gamble H. BESOI using a silicon germanium etch stop. 1997. Paper presented at Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV, Paris, France.