Broadband Class-EM power amplifier with double reactance compensation technique

Moise Safari Mugisho, Mury Thian, Andrei Grebennikov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents the analysis and design of a high-efficiency broadband Class-EM power amplifier (PA). The inherent broadband characteristic of the Class-EM PA that turns out due to the resistive-reactive impedance terminations at the fundamental and second harmonic frequency is first investigated and then extended using double reactance compensation technique by incorporating a parallel resonator LPCP into the main circuit’s load network. Designed using GaN HEMTs, the PAs deliver 23.7% (without LPCP) and 60.4% (with LPCP) fractional bandwidth, within which the PAE is larger than 60% and the output power is relatively constant.
Original languageEnglish
Title of host publication2020 IEEE International Symposium on Circuits and Systems (ISCAS): Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781728133201
DOIs
Publication statusPublished - 28 Sept 2020
Event2020 IEEE International Symposium on Circuits and Systems (ISCAS) - Seville, Spain
Duration: 12 Oct 202014 Oct 2020

Publication series

NameIEEE International Symposium on Circuits and Systems (ISCAS): Proceedings
ISSN (Print)2158-1525

Conference

Conference2020 IEEE International Symposium on Circuits and Systems (ISCAS)
Country/TerritorySpain
CitySeville
Period12/10/202014/10/2020

Keywords

  • Broadband, Class-EM, dc-feed inductance, GaN, high-efficiency, switching power amplifier, reactance compensation, ZCS, ZCDS, ZVS, ZVDS.

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