Carrier mobility variations in self-aligned germanium MOS transistors

Yee Low, D. Tantraviwat, Paul Rainey, Paul Baine, David McNeill, Neil Mitchell, Mervyn Armstrong, Harold Gamble

Research output: Contribution to journalArticle

1 Citation (Scopus)
LanguageEnglish
Pages43-49
Number of pages7
JournalECS Transactions
Volume28(1)
Publication statusPublished - Apr 2010

Cite this

Low, Y., Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., ... Gamble, H. (2010). Carrier mobility variations in self-aligned germanium MOS transistors. ECS Transactions, 28(1), 43-49.
Low, Yee ; Tantraviwat, D. ; Rainey, Paul ; Baine, Paul ; McNeill, David ; Mitchell, Neil ; Armstrong, Mervyn ; Gamble, Harold. / Carrier mobility variations in self-aligned germanium MOS transistors. In: ECS Transactions. 2010 ; Vol. 28(1). pp. 43-49.
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Low, Y, Tantraviwat, D, Rainey, P, Baine, P, McNeill, D, Mitchell, N, Armstrong, M & Gamble, H 2010, 'Carrier mobility variations in self-aligned germanium MOS transistors', ECS Transactions, vol. 28(1), pp. 43-49.

Carrier mobility variations in self-aligned germanium MOS transistors. / Low, Yee; Tantraviwat, D.; Rainey, Paul; Baine, Paul; McNeill, David; Mitchell, Neil; Armstrong, Mervyn; Gamble, Harold.

In: ECS Transactions, Vol. 28(1), 04.2010, p. 43-49.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Carrier mobility variations in self-aligned germanium MOS transistors

AU - Low, Yee

AU - Tantraviwat, D.

AU - Rainey, Paul

AU - Baine, Paul

AU - McNeill, David

AU - Mitchell, Neil

AU - Armstrong, Mervyn

AU - Gamble, Harold

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VL - 28(1)

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Low Y, Tantraviwat D, Rainey P, Baine P, McNeill D, Mitchell N et al. Carrier mobility variations in self-aligned germanium MOS transistors. ECS Transactions. 2010 Apr;28(1):43-49.