Characterisation of copper CVD films deposited using a Cu(I)(hfac)TMVS precursor

B.H.W. Toh; V.S.C. Len; David McNeill; Harold Gamble

Characterisation of copper CVD films deposited using a Cu(I)(hfac)TMVS precursor

B.H.W. Toh, V.S.C. Len, David McNeill, Harold Gamble

Research output: Contribution to conference › Paper

Original language	English
Pages	253-256
Number of pages	4
Publication status	Published - Dec 2000
Event	Proceedings of International Conference on Communications, Computers & Devices, ICCCD-2000 - Kharagpur, India Duration: 01 Dec 2000 → 01 Dec 2000

Conference

Conference	Proceedings of International Conference on Communications, Computers & Devices, ICCCD-2000
Country/Territory	India
City	Kharagpur
Period	01/12/2000 → 01/12/2000

Cite this

@conference{e18f33916a764af7b540c8fcedbe8b23,

title = "Characterisation of copper CVD films deposited using a Cu(I)(hfac)TMVS precursor",

author = "B.H.W. Toh and V.S.C. Len and David McNeill and Harold Gamble",

year = "2000",

month = dec,

language = "English",

pages = "253--256",

note = "Proceedings of International Conference on Communications, Computers \& Devices, ICCCD-2000 ; Conference date: 01-12-2000 Through 01-12-2000",

}

TY - CONF

T1 - Characterisation of copper CVD films deposited using a Cu(I)(hfac)TMVS precursor

AU - Toh, B.H.W.

AU - Len, V.S.C.

AU - McNeill, David

AU - Gamble, Harold

PY - 2000/12

Y1 - 2000/12

M3 - Paper

SP - 253

EP - 256

T2 - Proceedings of International Conference on Communications, Computers & Devices, ICCCD-2000

Y2 - 1 December 2000 through 1 December 2000

ER -