Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing

V.S.C. Len, B.H.W. Toh, David McNeill, Harold Gamble

Research output: Contribution to conferencePaper

LanguageEnglish
Pages243-246
Number of pages4
Publication statusPublished - Oct 2000
EventProceedings of 3rd International Conference on Materials for Microelectronics - Dublin, Ireland
Duration: 01 Oct 200001 Oct 2000

Conference

ConferenceProceedings of 3rd International Conference on Materials for Microelectronics
CountryIreland
CityDublin
Period01/10/200001/10/2000

Cite this

Len, V. S. C., Toh, B. H. W., McNeill, D., & Gamble, H. (2000). Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing. 243-246. Paper presented at Proceedings of 3rd International Conference on Materials for Microelectronics, Dublin, Ireland.
Len, V.S.C. ; Toh, B.H.W. ; McNeill, David ; Gamble, Harold. / Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing. Paper presented at Proceedings of 3rd International Conference on Materials for Microelectronics, Dublin, Ireland.4 p.
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year = "2000",
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note = "Proceedings of 3rd International Conference on Materials for Microelectronics ; Conference date: 01-10-2000 Through 01-10-2000",

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Len, VSC, Toh, BHW, McNeill, D & Gamble, H 2000, 'Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing' Paper presented at Proceedings of 3rd International Conference on Materials for Microelectronics, Dublin, Ireland, 01/10/2000 - 01/10/2000, pp. 243-246.

Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing. / Len, V.S.C.; Toh, B.H.W.; McNeill, David; Gamble, Harold.

2000. 243-246 Paper presented at Proceedings of 3rd International Conference on Materials for Microelectronics, Dublin, Ireland.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing

AU - Len, V.S.C.

AU - Toh, B.H.W.

AU - McNeill, David

AU - Gamble, Harold

PY - 2000/10

Y1 - 2000/10

M3 - Paper

SP - 243

EP - 246

ER -

Len VSC, Toh BHW, McNeill D, Gamble H. Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing. 2000. Paper presented at Proceedings of 3rd International Conference on Materials for Microelectronics, Dublin, Ireland.