Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing

V.S.C. Len, B.H.W. Toh, David McNeill, Harold Gamble

Research output: Contribution to conferencePaper

Original languageEnglish
Pages243-246
Number of pages4
Publication statusPublished - Oct 2000
EventProceedings of 3rd International Conference on Materials for Microelectronics - Dublin, Ireland
Duration: 01 Oct 200001 Oct 2000

Conference

ConferenceProceedings of 3rd International Conference on Materials for Microelectronics
CountryIreland
CityDublin
Period01/10/200001/10/2000

Cite this

Len, V. S. C., Toh, B. H. W., McNeill, D., & Gamble, H. (2000). Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing. 243-246. Paper presented at Proceedings of 3rd International Conference on Materials for Microelectronics, Dublin, Ireland.