Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing

V.S.C. Len; B.H.W. Toh; David McNeill; Harold Gamble

Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing

V.S.C. Len, B.H.W. Toh, David McNeill, Harold Gamble

Research output: Contribution to conference › Paper

Original language	English
Pages	243-246
Number of pages	4
Publication status	Published - Oct 2000
Event	Proceedings of 3rd International Conference on Materials for Microelectronics - Dublin, Ireland Duration: 01 Oct 2000 → 01 Oct 2000

Conference

Conference	Proceedings of 3rd International Conference on Materials for Microelectronics
Country/Territory	Ireland
City	Dublin
Period	01/10/2000 → 01/10/2000

Cite this

@conference{cf3a7781b95f4a00901b80a51ed05bb9,

title = "Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing",

author = "V.S.C. Len and B.H.W. Toh and David McNeill and Harold Gamble",

year = "2000",

month = oct,

language = "English",

pages = "243--246",

note = "Proceedings of 3rd International Conference on Materials for Microelectronics ; Conference date: 01-10-2000 Through 01-10-2000",

}

Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing. / Len, V.S.C.; Toh, B.H.W.; McNeill, David et al.
2000. 243-246 Paper presented at Proceedings of 3rd International Conference on Materials for Microelectronics, Dublin, Ireland.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing

AU - Len, V.S.C.

AU - Toh, B.H.W.

AU - McNeill, David

AU - Gamble, Harold

PY - 2000/10

Y1 - 2000/10

M3 - Paper

SP - 243

EP - 246

T2 - Proceedings of 3rd International Conference on Materials for Microelectronics

Y2 - 1 October 2000 through 1 October 2000

ER -