Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers

S. Uppal, D.L. Gay, Alastair Armstrong, David McNeill, Paul Baine, Mervyn Armstrong, Harold Gamble, K. Yallup

Research output: Contribution to conferencePaper

Original languageEnglish
Pages219-224
Number of pages6
Publication statusPublished - May 1999
EventProceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices - Seattle, United States
Duration: 01 May 199901 May 1999

Conference

ConferenceProceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices
CountryUnited States
CitySeattle
Period01/05/199901/05/1999

Cite this

Uppal, S., Gay, D. L., Armstrong, A., McNeill, D., Baine, P., Armstrong, M., Gamble, H., & Yallup, K. (1999). Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers. 219-224. Paper presented at Proceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices, Seattle, United States.