Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers

S. Uppal, D.L. Gay, Alastair Armstrong, David McNeill, Paul Baine, Mervyn Armstrong, Harold Gamble, K. Yallup

Research output: Contribution to conferencePaper

LanguageEnglish
Pages219-224
Number of pages6
Publication statusPublished - May 1999
EventProceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices - Seattle, United States
Duration: 01 May 199901 May 1999

Conference

ConferenceProceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices
CountryUnited States
CitySeattle
Period01/05/199901/05/1999

Cite this

Uppal, S., Gay, D. L., Armstrong, A., McNeill, D., Baine, P., Armstrong, M., ... Yallup, K. (1999). Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers. 219-224. Paper presented at Proceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices, Seattle, United States.
Uppal, S. ; Gay, D.L. ; Armstrong, Alastair ; McNeill, David ; Baine, Paul ; Armstrong, Mervyn ; Gamble, Harold ; Yallup, K. / Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers. Paper presented at Proceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices, Seattle, United States.6 p.
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author = "S. Uppal and D.L. Gay and Alastair Armstrong and David McNeill and Paul Baine and Mervyn Armstrong and Harold Gamble and K. Yallup",
year = "1999",
month = "5",
language = "English",
pages = "219--224",
note = "Proceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices ; Conference date: 01-05-1999 Through 01-05-1999",

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Uppal, S, Gay, DL, Armstrong, A, McNeill, D, Baine, P, Armstrong, M, Gamble, H & Yallup, K 1999, 'Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers' Paper presented at Proceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices, Seattle, United States, 01/05/1999 - 01/05/1999, pp. 219-224.

Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers. / Uppal, S.; Gay, D.L.; Armstrong, Alastair; McNeill, David; Baine, Paul; Armstrong, Mervyn; Gamble, Harold; Yallup, K.

1999. 219-224 Paper presented at Proceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices, Seattle, United States.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers

AU - Uppal, S.

AU - Gay, D.L.

AU - Armstrong, Alastair

AU - McNeill, David

AU - Baine, Paul

AU - Armstrong, Mervyn

AU - Gamble, Harold

AU - Yallup, K.

PY - 1999/5

Y1 - 1999/5

M3 - Paper

SP - 219

EP - 224

ER -

Uppal S, Gay DL, Armstrong A, McNeill D, Baine P, Armstrong M et al. Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers. 1999. Paper presented at Proceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices, Seattle, United States.