Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers

S. Uppal, D.L. Gay, Alastair Armstrong, David McNeill, Paul Baine, Mervyn Armstrong, Harold Gamble, K. Yallup

Research output: Contribution to conference › Paper

Original language	English
Pages	219-224
Number of pages	6
Publication status	Published - May 1999
Event	195th Electrochemical Society Meeting - Seattle, United States Duration: 01 May 1999 → 05 May 1999

Conference	195th Electrochemical Society Meeting
Abbreviated title	ECS
Country/Territory	United States
City	Seattle
Period	01/05/1999 → 05/05/1999

Cite this

@conference{a86335f4f0e644719a97f10fdfe77a5a,

title = "Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers",

author = "S. Uppal and D.L. Gay and Alastair Armstrong and David McNeill and Paul Baine and Mervyn Armstrong and Harold Gamble and K. Yallup",

year = "1999",

month = may,

language = "English",

pages = "219--224",

note = "195th Electrochemical Society Meeting, ECS ; Conference date: 01-05-1999 Through 05-05-1999",

}

TY - CONF

T1 - Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers

AU - Uppal, S.

AU - Gay, D.L.

AU - Armstrong, Alastair

AU - McNeill, David

AU - Baine, Paul

AU - Armstrong, Mervyn

AU - Gamble, Harold

AU - Yallup, K.

PY - 1999/5

Y1 - 1999/5

M3 - Paper

SP - 219

EP - 224

T2 - 195th Electrochemical Society Meeting

Y2 - 1 May 1999 through 5 May 1999

ER -