Characterization of laser-generated silicon plasma

L. Torrisi, F. Caridi*, D. Margarone, A. Borrielli

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)


A study of visible laser ablation of silicon, in vacuum, by using 3 ns Nd:YAG laser radiation is reported. Nanosecond pulsed ablation, at an intensity of the order of 10 10 W/cm 2 , produces high non-isotropic emission of neutrals and ionic species. Mass quadrupole spectrometry, coupled to electrostatic ion deflection, allows estimation of the energy distributions of the emitted species from plasma. Neutrals show typical Boltzmann-like distributions while ions show Coulomb-Boltzmann-shifted distributions depending on their charge state. Time-of-flight measurements were also performed by using an ion collector consisting of a collimated Faraday cup placed along the normal to the target surface. Surface profiles of the craters, created by the laser radiation absorption, permitted to study the ablation threshold and ablation yields of silicon in vacuum. The plasma fractional ionization, temperature and density were evaluated by the experimental data. A special regard is given to the ion acceleration process occurring inside the plasma due to the high electrical field generated at the non-equilibrium plasma conditions. The angular distribution of the neutral and ion species is discussed.

Original languageEnglish
Pages (from-to)2090-2095
Number of pages6
JournalApplied Surface Science
Issue number7
Publication statusPublished - 30 Jan 2008
Externally publishedYes

Bibliographical note

Copyright 2019 Elsevier B.V., All rights reserved.


  • Electric field in plasma-laser
  • Laser ablation
  • Plasma temperature
  • Silicon plasma

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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