Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects

S O'Prey, GF Cairns, P Dawson*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic farce microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling rig is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezoactuator system) and variation of the temperature in the range of similar to 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterisation as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.

Original languageEnglish
Title of host publicationMATERIALS AND ELECTRONICS FOR HIGH-SPEED AND INFRARED DETECTORS
EditorsSM Goodnick, WF Kailey, RE Longshore, YH Zhang
Place of PublicationBELLINGHAM
PublisherSPIE - INT SOC OPTICAL ENGINEERING
Pages76-86
Number of pages11
ISBN (Print)0-8194-3280-6
Publication statusPublished - 1999
EventConference on Materials and Electronics for High-Speed and Infrared Detectors - DENVER, Colombia
Duration: 19 Jul 199923 Jul 1999

Publication series

NamePROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
PublisherSPIE-INT SOC OPTICAL ENGINEERING
Volume3794
ISSN (Print)0277-786X

Conference

ConferenceConference on Materials and Electronics for High-Speed and Infrared Detectors
CountryColombia
Period19/07/199923/07/1999

Keywords

  • metal silicides
  • surface plasmon polaritons
  • infrared detectors
  • I-V-T
  • PLATINUM SILICIDE FORMATION
  • SURFACE-PLASMON-POLARITONS
  • SCHOTTKY DIODES
  • ABSORPTION
  • FILMS

Cite this