@inproceedings{a2653528c253492c923fe202d03f2f0c,
title = "Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects",
abstract = "PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic farce microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling rig is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezoactuator system) and variation of the temperature in the range of similar to 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterisation as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.",
keywords = "metal silicides, surface plasmon polaritons, infrared detectors, I-V-T, PLATINUM SILICIDE FORMATION, SURFACE-PLASMON-POLARITONS, SCHOTTKY DIODES, ABSORPTION, FILMS",
author = "S O'Prey and GF Cairns and P Dawson",
year = "1999",
language = "English",
isbn = "0-8194-3280-6",
series = "PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)",
publisher = "SPIE - INT SOC OPTICAL ENGINEERING",
pages = "76--86",
editor = "SM Goodnick and WF Kailey and RE Longshore and YH Zhang",
booktitle = "MATERIALS AND ELECTRONICS FOR HIGH-SPEED AND INFRARED DETECTORS",
note = "Conference on Materials and Electronics for High-Speed and Infrared Detectors ; Conference date: 19-07-1999 Through 23-07-1999",
}