Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects

S O'Prey; GF Cairns; P Dawson

Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects

S O'Prey, GF Cairns, P Dawson^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic farce microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling rig is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezoactuator system) and variation of the temperature in the range of similar to 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterisation as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.

Original language	English
Title of host publication	MATERIALS AND ELECTRONICS FOR HIGH-SPEED AND INFRARED DETECTORS
Editors	SM Goodnick, WF Kailey, RE Longshore, YH Zhang
Place of Publication	BELLINGHAM
Publisher	SPIE - INT SOC OPTICAL ENGINEERING
Pages	76-86
Number of pages	11
ISBN (Print)	0-8194-3280-6
Publication status	Published - 1999
Event	Conference on Materials and Electronics for High-Speed and Infrared Detectors - DENVER, Colombia Duration: 19 Jul 1999 → 23 Jul 1999

Publication series

Name	PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
Publisher	SPIE-INT SOC OPTICAL ENGINEERING
Volume	3794
ISSN (Print)	0277-786X

Conference

Conference	Conference on Materials and Electronics for High-Speed and Infrared Detectors
Country	Colombia
Period	19/07/1999 → 23/07/1999

Keywords

metal silicides
surface plasmon polaritons
infrared detectors
I-V-T
PLATINUM SILICIDE FORMATION
SURFACE-PLASMON-POLARITONS
SCHOTTKY DIODES
ABSORPTION
FILMS

Cite this

O'Prey, S., Cairns, GF., & Dawson, P. (1999). Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects. In SM. Goodnick, WF. Kailey, RE. Longshore, & YH. Zhang (Eds.), MATERIALS AND ELECTRONICS FOR HIGH-SPEED AND INFRARED DETECTORS (pp. 76-86). (PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE); Vol. 3794). SPIE - INT SOC OPTICAL ENGINEERING.

O'Prey, S ; Cairns, GF ; Dawson, P. / Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects. MATERIALS AND ELECTRONICS FOR HIGH-SPEED AND INFRARED DETECTORS. editor / SM Goodnick ; WF Kailey ; RE Longshore ; YH Zhang. BELLINGHAM : SPIE - INT SOC OPTICAL ENGINEERING, 1999. pp. 76-86 (PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)).

@inproceedings{a2653528c253492c923fe202d03f2f0c,

title = "Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects",

abstract = "PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic farce microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling rig is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezoactuator system) and variation of the temperature in the range of similar to 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterisation as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.",

keywords = "metal silicides, surface plasmon polaritons, infrared detectors, I-V-T, PLATINUM SILICIDE FORMATION, SURFACE-PLASMON-POLARITONS, SCHOTTKY DIODES, ABSORPTION, FILMS",

author = "S O'Prey and GF Cairns and P Dawson",

year = "1999",

language = "English",

isbn = "0-8194-3280-6",

series = "PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)",

publisher = "SPIE - INT SOC OPTICAL ENGINEERING",

pages = "76--86",

editor = "SM Goodnick and WF Kailey and RE Longshore and YH Zhang",

booktitle = "MATERIALS AND ELECTRONICS FOR HIGH-SPEED AND INFRARED DETECTORS",

note = "Conference on Materials and Electronics for High-Speed and Infrared Detectors ; Conference date: 19-07-1999 Through 23-07-1999",

}

O'Prey, S, Cairns, GF & Dawson, P 1999, Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects. in SM Goodnick, WF Kailey, RE Longshore & YH Zhang (eds), MATERIALS AND ELECTRONICS FOR HIGH-SPEED AND INFRARED DETECTORS. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), vol. 3794, SPIE - INT SOC OPTICAL ENGINEERING, BELLINGHAM, pp. 76-86, Conference on Materials and Electronics for High-Speed and Infrared Detectors, Colombia, 19/07/1999.

Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects. / O'Prey, S; Cairns, GF; Dawson, P.

MATERIALS AND ELECTRONICS FOR HIGH-SPEED AND INFRARED DETECTORS. ed. / SM Goodnick; WF Kailey; RE Longshore; YH Zhang. BELLINGHAM : SPIE - INT SOC OPTICAL ENGINEERING, 1999. p. 76-86 (PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE); Vol. 3794).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects

AU - O'Prey, S

AU - Cairns, GF

AU - Dawson, P

PY - 1999

Y1 - 1999

N2 - PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic farce microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling rig is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezoactuator system) and variation of the temperature in the range of similar to 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterisation as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.

AB - PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic farce microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling rig is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezoactuator system) and variation of the temperature in the range of similar to 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterisation as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.

KW - metal silicides

KW - surface plasmon polaritons

KW - infrared detectors

KW - I-V-T

KW - PLATINUM SILICIDE FORMATION

KW - SURFACE-PLASMON-POLARITONS

KW - SCHOTTKY DIODES

KW - ABSORPTION

KW - FILMS

M3 - Conference contribution

SN - 0-8194-3280-6

T3 - PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)

SP - 76

EP - 86

BT - MATERIALS AND ELECTRONICS FOR HIGH-SPEED AND INFRARED DETECTORS

A2 - Goodnick, SM

A2 - Kailey, WF

A2 - Longshore, RE

A2 - Zhang, YH

PB - SPIE - INT SOC OPTICAL ENGINEERING

CY - BELLINGHAM

T2 - Conference on Materials and Electronics for High-Speed and Infrared Detectors

Y2 - 19 July 1999 through 23 July 1999

ER -

O'Prey S, Cairns GF, Dawson P. Characterization of optical properties of PtSi at 3.392 mu m from 300 K to 85 K and relation of morphological effects. In Goodnick SM, Kailey WF, Longshore RE, Zhang YH, editors, MATERIALS AND ELECTRONICS FOR HIGH-SPEED AND INFRARED DETECTORS. BELLINGHAM: SPIE - INT SOC OPTICAL ENGINEERING. 1999. p. 76-86. (PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)).