CHARACTERIZATION OF SURFACE-PLASMONS ON METAL-OXIDE-SEMICONDUCTOR STRUCTURES

IR TAMM*, P DAWSON, MP CONNOLLY, SH RAZA, HS GAMBLE

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Using the Otto (prism-air gap-sample) configuration p-polarized light of wavelength 632.8 nm has been coupled with greater than 80% efficiency to surface plasmons on the aluminium electrode of silicon-silicon dioxide-aluminium structures. The results show that if the average power per unit area dissipated on the metal film exceeds approximately 1 mW mm-2, then the coupling gap and thus the characteristics of the surface plasmon resonance are noticeably altered. In modelling the optical response of such systems the inclusion of both a non-uniform air coupling gap and a thin cermet layer at the aluminium surface may be necessary.

Original languageEnglish
Pages (from-to)1593-1598
Number of pages6
JournalJournal of Modern Optics
Volume38
Issue number8
Publication statusPublished - Aug 1991

Keywords

  • INTERNAL PHOTOEMISSION
  • DETECTORS

Cite this

TAMM, IR., DAWSON, P., CONNOLLY, MP., RAZA, SH., & GAMBLE, HS. (1991). CHARACTERIZATION OF SURFACE-PLASMONS ON METAL-OXIDE-SEMICONDUCTOR STRUCTURES. Journal of Modern Optics, 38(8), 1593-1598.