Circular geometry MOS transistor analysis of SOI substrates for high energy physics particle detectors

Mervyn Armstrong, Harold Gamble, Fred Ruddell, John Montgomery, Suli Suder, G. Casse, T. Bowcock, P.P. Allport

Research output: Contribution to conference › Paper

Original language	English
Pages	101-104
Number of pages	4
Publication status	Published - Mar 2008
Event	Proc IEEE Conference on Microelectronic Test Structures - Edinburgh, United Kingdom Duration: 01 Mar 2008 → 01 Mar 2008

Conference	Proc IEEE Conference on Microelectronic Test Structures
Country/Territory	United Kingdom
City	Edinburgh
Period	01/03/2008 → 01/03/2008

Cite this

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title = "Circular geometry MOS transistor analysis of SOI substrates for high energy physics particle detectors",

author = "Mervyn Armstrong and Harold Gamble and Fred Ruddell and John Montgomery and Suli Suder and G. Casse and T. Bowcock and P.P. Allport",

year = "2008",

month = mar,

language = "English",

pages = "101--104",

note = "Proc IEEE Conference on Microelectronic Test Structures ; Conference date: 01-03-2008 Through 01-03-2008",

}

TY - CONF

T1 - Circular geometry MOS transistor analysis of SOI substrates for high energy physics particle detectors

AU - Armstrong, Mervyn

AU - Gamble, Harold

AU - Ruddell, Fred

AU - Montgomery, John

AU - Suder, Suli

AU - Casse, G.

AU - Bowcock, T.

AU - Allport, P.P.

PY - 2008/3

Y1 - 2008/3

UR - http://www.scopus.com/inward/record.url?scp=51349130233&partnerID=8YFLogxK

M3 - Paper

SP - 101

EP - 104

T2 - Proc IEEE Conference on Microelectronic Test Structures

Y2 - 1 March 2008 through 1 March 2008

ER -