Circular geometry MOS transistor analysis of SOI substrates for high energy physics particle detectors

Mervyn Armstrong, Harold Gamble, Fred Ruddell, John Montgomery, Suli Suder, G. Casse, T. Bowcock, P.P. Allport

Research output: Contribution to conferencePaper

Original languageEnglish
Pages101-104
Number of pages4
Publication statusPublished - Mar 2008
EventProc IEEE Conference on Microelectronic Test Structures - Edinburgh, United Kingdom
Duration: 01 Mar 200801 Mar 2008

Conference

ConferenceProc IEEE Conference on Microelectronic Test Structures
CountryUnited Kingdom
CityEdinburgh
Period01/03/200801/03/2008

Cite this

Armstrong, M., Gamble, H., Ruddell, F., Montgomery, J., Suder, S., Casse, G., Bowcock, T., & Allport, P. P. (2008). Circular geometry MOS transistor analysis of SOI substrates for high energy physics particle detectors. 101-104. Paper presented at Proc IEEE Conference on Microelectronic Test Structures, Edinburgh, United Kingdom.