Compact FSS absorber design using resistively loaded quadruple hexagonal loops for bandwidth enhancement

S.N. Zabri; R. Cahill; A. Schuchinsky

doi:10.1049/el.2014.3866

Compact FSS absorber design using resistively loaded quadruple hexagonal loops for bandwidth enhancement

S.N. Zabri, R. Cahill, A. Schuchinsky

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Abstract

This letter presents the design of a thin microwave absorber which exhibits a -10 dB reflectivity bandwidth of 108% at normal incidence and 16% for simultaneous suppression of TE and TM polarised waves over the angular range 0-45° is presented. The structure consists of a 3 mm-thick metal backed frequency selective surface (FSS) with four resistively loaded hexagonal loop elements in each unit cell. The surface resistivity and width of the loops are carefully chosen to maximise the bandwidth by merging the reflection nulls that are generated by the multi-resonant absorber. Measurement and simulation results are in good agreement over the broad frequency range 7.8-24 GHz.

Original language	English
Pages (from-to)	162-164
Number of pages	3
Journal	IET Electronic Letters
Volume	51
Issue number	2
DOIs	https://doi.org/10.1049/el.2014.3866
Publication status	Published - 2015

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10.1049/el.2014.3866

Compact FSS absorber design using resistively loaded quadruple hexagonal loops for bandwidth enhancement
This paper is a postprint of a paper submitted to and accepted for publication in Electronics Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library.
Accepted author manuscript, 236 KB

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title = "Compact FSS absorber design using resistively loaded quadruple hexagonal loops for bandwidth enhancement",

abstract = "This letter presents the design of a thin microwave absorber which exhibits a -10 dB reflectivity bandwidth of 108% at normal incidence and 16% for simultaneous suppression of TE and TM polarised waves over the angular range 0-45° is presented. The structure consists of a 3 mm-thick metal backed frequency selective surface (FSS) with four resistively loaded hexagonal loop elements in each unit cell. The surface resistivity and width of the loops are carefully chosen to maximise the bandwidth by merging the reflection nulls that are generated by the multi-resonant absorber. Measurement and simulation results are in good agreement over the broad frequency range 7.8-24 GHz.",

author = "S.N. Zabri and R. Cahill and A. Schuchinsky",

year = "2015",

doi = "10.1049/el.2014.3866",

language = "English",

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pages = "162--164",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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T1 - Compact FSS absorber design using resistively loaded quadruple hexagonal loops for bandwidth enhancement

AU - Zabri, S.N.

AU - Cahill, R.

AU - Schuchinsky, A.

PY - 2015

Y1 - 2015

N2 - This letter presents the design of a thin microwave absorber which exhibits a -10 dB reflectivity bandwidth of 108% at normal incidence and 16% for simultaneous suppression of TE and TM polarised waves over the angular range 0-45° is presented. The structure consists of a 3 mm-thick metal backed frequency selective surface (FSS) with four resistively loaded hexagonal loop elements in each unit cell. The surface resistivity and width of the loops are carefully chosen to maximise the bandwidth by merging the reflection nulls that are generated by the multi-resonant absorber. Measurement and simulation results are in good agreement over the broad frequency range 7.8-24 GHz.

AB - This letter presents the design of a thin microwave absorber which exhibits a -10 dB reflectivity bandwidth of 108% at normal incidence and 16% for simultaneous suppression of TE and TM polarised waves over the angular range 0-45° is presented. The structure consists of a 3 mm-thick metal backed frequency selective surface (FSS) with four resistively loaded hexagonal loop elements in each unit cell. The surface resistivity and width of the loops are carefully chosen to maximise the bandwidth by merging the reflection nulls that are generated by the multi-resonant absorber. Measurement and simulation results are in good agreement over the broad frequency range 7.8-24 GHz.

U2 - 10.1049/el.2014.3866

DO - 10.1049/el.2014.3866

M3 - Article

VL - 51

SP - 162

EP - 164

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 2

ER -