Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers

N.D. Jankovic, Alastair Armstrong

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

A comparison of dc characteristics of fully depleted double-gate (DG) MOSFETs with respect to low-power circuit applications and device scaling has been performed by two-dimensional device simulation. Three different DG MOSFET structures including a conventional N+ polysilicon gate device with highly doped Si layer, an asymmetrical P+/N+ polysilicon gate device with low doped Si layer and a midgap metal gate device with low doped Si layer have been analysed. It was found that DG MOSFET with mid-gap metal, gates yields the best dc parameters for given off-state drain leakage current and highest immunity to the variation of technology parameters (gate length, gate oxide thickness and Si layer thickness). It is also found that an asymmetrical P+/N+ polysilicon gate DG MOSFET design offers comparable dc characteristics, but better parameter immunity to technology tolerances than a conventional DG MOSFET. (C) 2004 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)647-653
Number of pages7
JournalMicroelectronics Journal
Volume35
Issue number8
DOIs
Publication statusPublished - Aug 2004

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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