Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes

Z. Bian, K. J. Rae, B. C. King, D. Kim, G. Li, S. Thoms, D. T.D. Childs, N. D. Gerrard, N. Babazadeh, P. Reynolds, J. Grant, A. F. McKenzie, J. R. Orchard, R. J.E. Taylor, R. A. Hogg

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Abstract

This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a square lattice and circle atoms is considered.
Original languageEnglish
JournalAIP Advances
Volume11
Issue number6
DOIs
Publication statusPublished - 10 Jun 2021

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