Compliance current induced non-reversible transition from unipolar to bipolar resistive switching in a Cu/TaOx/Pt structure

Fran Kurnia, ChangUk Jung, Bowha Lee, Chunli Liu

Research output: Contribution to journalLetter

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Abstract

Unipolar resistive switching (URS) as well as bipolar resistive switching (BRS) behaviors in a Cu/TaOx/Pt structure were investigated. Upon increasing the compliance current (Ic), the current-voltage characteristics of the Cu/TaOx/Pt structure showed a URS behavior at Ic = 0.1 mA then experienced a non-reversible transition from the URS to a BRS mode at Ic = 10 mA. Through a detailed analysis of the electrical properties in each resistance state of URS and BRS, we revealed that the permanent transition from the URS to the BRS mode was induced by the formation of stronger Cu metal conductive filaments within the TaOx thin film. More interestingly, both URS and BRS modes were governed by the formation and rupture of conductive filaments, whereas the rupture of these filamentary paths in BRS was proposed due to both Joule heating and electric field effects.
Original languageEnglish
JournalApplied Physics Letters
Volume107
Issue number073501
DOIs
Publication statusPublished - 17 Aug 2015

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filaments
Joule heating
electrical properties
electric fields
electric potential
thin films
metals

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title = "Compliance current induced non-reversible transition from unipolar to bipolar resistive switching in a Cu/TaOx/Pt structure",
abstract = "Unipolar resistive switching (URS) as well as bipolar resistive switching (BRS) behaviors in a Cu/TaOx/Pt structure were investigated. Upon increasing the compliance current (Ic), the current-voltage characteristics of the Cu/TaOx/Pt structure showed a URS behavior at Ic = 0.1 mA then experienced a non-reversible transition from the URS to a BRS mode at Ic = 10 mA. Through a detailed analysis of the electrical properties in each resistance state of URS and BRS, we revealed that the permanent transition from the URS to the BRS mode was induced by the formation of stronger Cu metal conductive filaments within the TaOx thin film. More interestingly, both URS and BRS modes were governed by the formation and rupture of conductive filaments, whereas the rupture of these filamentary paths in BRS was proposed due to both Joule heating and electric field effects.",
author = "Fran Kurnia and ChangUk Jung and Bowha Lee and Chunli Liu",
year = "2015",
month = "8",
day = "17",
doi = "10.1063/1.4928913",
language = "English",
volume = "107",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "073501",

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Compliance current induced non-reversible transition from unipolar to bipolar resistive switching in a Cu/TaOx/Pt structure. / Kurnia, Fran; Jung, ChangUk; Lee, Bowha; Liu, Chunli.

In: Applied Physics Letters, Vol. 107, No. 073501, 17.08.2015.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Compliance current induced non-reversible transition from unipolar to bipolar resistive switching in a Cu/TaOx/Pt structure

AU - Kurnia, Fran

AU - Jung, ChangUk

AU - Lee, Bowha

AU - Liu, Chunli

PY - 2015/8/17

Y1 - 2015/8/17

N2 - Unipolar resistive switching (URS) as well as bipolar resistive switching (BRS) behaviors in a Cu/TaOx/Pt structure were investigated. Upon increasing the compliance current (Ic), the current-voltage characteristics of the Cu/TaOx/Pt structure showed a URS behavior at Ic = 0.1 mA then experienced a non-reversible transition from the URS to a BRS mode at Ic = 10 mA. Through a detailed analysis of the electrical properties in each resistance state of URS and BRS, we revealed that the permanent transition from the URS to the BRS mode was induced by the formation of stronger Cu metal conductive filaments within the TaOx thin film. More interestingly, both URS and BRS modes were governed by the formation and rupture of conductive filaments, whereas the rupture of these filamentary paths in BRS was proposed due to both Joule heating and electric field effects.

AB - Unipolar resistive switching (URS) as well as bipolar resistive switching (BRS) behaviors in a Cu/TaOx/Pt structure were investigated. Upon increasing the compliance current (Ic), the current-voltage characteristics of the Cu/TaOx/Pt structure showed a URS behavior at Ic = 0.1 mA then experienced a non-reversible transition from the URS to a BRS mode at Ic = 10 mA. Through a detailed analysis of the electrical properties in each resistance state of URS and BRS, we revealed that the permanent transition from the URS to the BRS mode was induced by the formation of stronger Cu metal conductive filaments within the TaOx thin film. More interestingly, both URS and BRS modes were governed by the formation and rupture of conductive filaments, whereas the rupture of these filamentary paths in BRS was proposed due to both Joule heating and electric field effects.

U2 - 10.1063/1.4928913

DO - 10.1063/1.4928913

M3 - Letter

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 073501

ER -