Conduction mechanism in high-k ZrO2 gate dielectric films on strained-Ge layers

Mervyn Armstrong, Harold Gamble

Research output: Contribution to conferencePaper

Original languageEnglish
Pages29-30
Number of pages2
Publication statusPublished - Dec 2003
Event2003 Intl Semiconductor Device Research Symp (IEEE Cat. No.03EX741), pp 29-30 - Washington, United States
Duration: 01 Dec 200301 Dec 2003

Conference

Conference2003 Intl Semiconductor Device Research Symp (IEEE Cat. No.03EX741), pp 29-30
Country/TerritoryUnited States
CityWashington
Period01/12/200301/12/2003

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