Conduit diffusion of dopants in tungsten silicide layers

Mervyn Armstrong, Harold Gamble, Michael Bain, Paul Baine, David McNeill

Research output: Contribution to conference › Paper

LanguageEnglish
Pages65-70
Number of pages6
Publication statusPublished - Mar 2008
EventProc IEEE Conference on Microelectronic Test Structures - Edinburgh, United Kingdom
Duration: 01 Mar 2008 → 01 Mar 2008

Conference

ConferenceProc IEEE Conference on Microelectronic Test Structures
CountryUnited Kingdom
CityEdinburgh
Period01/03/2008 → 01/03/2008

Cite this

Armstrong, M., Gamble, H., Bain, M., Baine, P., & McNeill, D. (2008). Conduit diffusion of dopants in tungsten silicide layers. 65-70. Paper presented at Proc IEEE Conference on Microelectronic Test Structures, Edinburgh, United Kingdom.
Armstrong, Mervyn ; Gamble, Harold ; Bain, Michael ; Baine, Paul ; McNeill, David. / Conduit diffusion of dopants in tungsten silicide layers. Paper presented at Proc IEEE Conference on Microelectronic Test Structures, Edinburgh, United Kingdom.6 p.
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language = "English",
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note = "Proc IEEE Conference on Microelectronic Test Structures ; Conference date: 01-03-2008 Through 01-03-2008",

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Armstrong, M, Gamble, H, Bain, M, Baine, P & McNeill, D 2008, 'Conduit diffusion of dopants in tungsten silicide layers' Paper presented at Proc IEEE Conference on Microelectronic Test Structures, Edinburgh, United Kingdom, 01/03/2008 - 01/03/2008, pp. 65-70.

Conduit diffusion of dopants in tungsten silicide layers. / Armstrong, Mervyn; Gamble, Harold; Bain, Michael; Baine, Paul; McNeill, David.

2008. 65-70 Paper presented at Proc IEEE Conference on Microelectronic Test Structures, Edinburgh, United Kingdom.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Conduit diffusion of dopants in tungsten silicide layers

AU - Armstrong, Mervyn

AU - Gamble, Harold

AU - Bain, Michael

AU - Baine, Paul

AU - McNeill, David

PY - 2008/3

Y1 - 2008/3

M3 - Paper

SP - 65

EP - 70

ER -

Armstrong M, Gamble H, Bain M, Baine P, McNeill D. Conduit diffusion of dopants in tungsten silicide layers. 2008. Paper presented at Proc IEEE Conference on Microelectronic Test Structures, Edinburgh, United Kingdom.