Language | English |
---|---|
Pages | 65-70 |
Number of pages | 6 |
Publication status | Published - Mar 2008 |
Event | Proc IEEE Conference on Microelectronic Test Structures - Edinburgh, United Kingdom Duration: 01 Mar 2008 → 01 Mar 2008 |
Conference
Conference | Proc IEEE Conference on Microelectronic Test Structures |
---|---|
Country | United Kingdom |
City | Edinburgh |
Period | 01/03/2008 → 01/03/2008 |
Cite this
Armstrong, M., Gamble, H., Bain, M., Baine, P., & McNeill, D. (2008). Conduit diffusion of dopants in tungsten silicide layers. 65-70. Paper presented at Proc IEEE Conference on Microelectronic Test Structures, Edinburgh, United Kingdom.
@conference{760548016edc4c5296cb7219c272dcb3,
title = "Conduit diffusion of dopants in tungsten silicide layers",
author = "Mervyn Armstrong and Harold Gamble and Michael Bain and Paul Baine and David McNeill",
year = "2008",
month = "3",
language = "English",
pages = "65--70",
note = "Proc IEEE Conference on Microelectronic Test Structures ; Conference date: 01-03-2008 Through 01-03-2008",
}
Armstrong, M, Gamble, H, Bain, M, Baine, P & McNeill, D 2008, 'Conduit diffusion of dopants in tungsten silicide layers' Paper presented at Proc IEEE Conference on Microelectronic Test Structures, Edinburgh, United Kingdom, 01/03/2008 - 01/03/2008, pp. 65-70.
Conduit diffusion of dopants in tungsten silicide layers. / Armstrong, Mervyn; Gamble, Harold; Bain, Michael; Baine, Paul; McNeill, David.
2008. 65-70 Paper presented at Proc IEEE Conference on Microelectronic Test Structures, Edinburgh, United Kingdom.Research output: Contribution to conference › Paper
TY - CONF
T1 - Conduit diffusion of dopants in tungsten silicide layers
AU - Armstrong, Mervyn
AU - Gamble, Harold
AU - Bain, Michael
AU - Baine, Paul
AU - McNeill, David
PY - 2008/3
Y1 - 2008/3
M3 - Paper
SP - 65
EP - 70
ER -
Armstrong M, Gamble H, Bain M, Baine P, McNeill D. Conduit diffusion of dopants in tungsten silicide layers. 2008. Paper presented at Proc IEEE Conference on Microelectronic Test Structures, Edinburgh, United Kingdom.