Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl-2 plasma etching

S.A. Rizvi, P.D. Maguire, C.M.O. Mahony, O.A. Okpalugo, C.S. Corr, Bill Graham, S.M. Morley

Research output: Contribution to conference › Paper

Original language	English
Pages	112-115
Number of pages	4
Publication status	Published - Jul 2002
Event	International Workshop on Nitride Semiconductors (IWN 2002) - Aachen, Germany Duration: 01 Jul 2002 → 01 Jul 2002

Conference	International Workshop on Nitride Semiconductors (IWN 2002)
Country/Territory	Germany
City	Aachen
Period	01/07/2002 → 01/07/2002

Cite this

@conference{3ec1fb3b051e4299b1e751200d77ee03,

title = "Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl-2 plasma etching",

author = "S.A. Rizvi and P.D. Maguire and C.M.O. Mahony and O.A. Okpalugo and C.S. Corr and Bill Graham and S.M. Morley",

year = "2002",

month = jul,

language = "English",

pages = "112--115",

note = "International Workshop on Nitride Semiconductors (IWN 2002) ; Conference date: 01-07-2002 Through 01-07-2002",

}

TY - CONF

T1 - Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl-2 plasma etching

AU - Rizvi, S.A.

AU - Maguire, P.D.

AU - Mahony, C.M.O.

AU - Okpalugo, O.A.

AU - Corr, C.S.

AU - Graham, Bill

AU - Morley, S.M.

PY - 2002/7

Y1 - 2002/7

M3 - Paper

SP - 112

EP - 115

T2 - International Workshop on Nitride Semiconductors (IWN 2002)

Y2 - 1 July 2002 through 1 July 2002

ER -