Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography

V. Z. Zubialevich; P. Pampili; M. McLaren; M. Arredondo-Arechavala; G. Sabui; Z. J. Shen; P. J. Parbrook

doi:10.1109/NANO.2018.8626265

Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography

V. Z. Zubialevich, P. Pampili, M. McLaren, M. Arredondo-Arechavala, G. Sabui, Z. J. Shen, P. J. Parbrook

School of Mathematics and Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.

Original language	English
Title of host publication	18th International Conference on Nanotechnology, NANO 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Volume	2018-July
ISBN (Electronic)	9781538653364
DOIs	https://doi.org/10.1109/NANO.2018.8626265
Publication status	Published - 28 Jan 2019
Event	18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland Duration: 23 Jul 2018 → 26 Jul 2018

Conference

Conference	18th International Conference on Nanotechnology, NANO 2018
Country/Territory	Ireland
City	Cork
Period	23/07/2018 → 26/07/2018

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

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Cite this

Zubialevich, V. Z., Pampili, P., McLaren, M., Arredondo-Arechavala, M., Sabui, G., Shen, Z. J., & Parbrook, P. J. (2019). Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography. In 18th International Conference on Nanotechnology, NANO 2018 (Vol. 2018-July). Article 8626265 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2018.8626265

@inproceedings{08a9c7c4573a429c9eaea2c55e68e126,

title = "Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography",

abstract = "A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.",

author = "Zubialevich, {V. Z.} and P. Pampili and M. McLaren and M. Arredondo-Arechavala and G. Sabui and Shen, {Z. J.} and Parbrook, {P. J.}",

year = "2019",

month = jan,

day = "28",

doi = "10.1109/NANO.2018.8626265",

language = "English",

volume = "2018-July",

booktitle = "18th International Conference on Nanotechnology, NANO 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "18th International Conference on Nanotechnology, NANO 2018 ; Conference date: 23-07-2018 Through 26-07-2018",

}

Zubialevich, VZ, Pampili, P, McLaren, M, Arredondo-Arechavala, M, Sabui, G, Shen, ZJ & Parbrook, PJ 2019, Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography. in 18th International Conference on Nanotechnology, NANO 2018. vol. 2018-July, 8626265, Institute of Electrical and Electronics Engineers Inc., 18th International Conference on Nanotechnology, NANO 2018, Cork, Ireland, 23/07/2018. https://doi.org/10.1109/NANO.2018.8626265

Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography. / Zubialevich, V. Z.; Pampili, P.; McLaren, M. et al.
18th International Conference on Nanotechnology, NANO 2018. Vol. 2018-July Institute of Electrical and Electronics Engineers Inc., 2019. 8626265.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography

AU - Zubialevich, V. Z.

AU - Pampili, P.

AU - McLaren, M.

AU - Arredondo-Arechavala, M.

AU - Sabui, G.

AU - Shen, Z. J.

AU - Parbrook, P. J.

PY - 2019/1/28

Y1 - 2019/1/28

N2 - A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.

AB - A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.

U2 - 10.1109/NANO.2018.8626265

DO - 10.1109/NANO.2018.8626265

M3 - Conference contribution

AN - SCOPUS:85062279763

VL - 2018-July

BT - 18th International Conference on Nanotechnology, NANO 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 18th International Conference on Nanotechnology, NANO 2018

Y2 - 23 July 2018 through 26 July 2018

ER -

Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography

Abstract

Conference

ASJC Scopus subject areas

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