Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography

V. Z. Zubialevich, P. Pampili, M. McLaren, M. Arredondo-Arechavala, G. Sabui, Z. J. Shen, P. J. Parbrook

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.

Original languageEnglish
Title of host publication18th International Conference on Nanotechnology, NANO 2018
PublisherIEEE Computer Society
Volume2018-July
ISBN (Electronic)9781538653364
DOIs
Publication statusPublished - 28 Jan 2019
Event18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland
Duration: 23 Jul 201826 Jul 2018

Conference

Conference18th International Conference on Nanotechnology, NANO 2018
CountryIreland
CityCork
Period23/07/201826/07/2018

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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