Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration

Mervyn Armstrong, Paul Baine, Harold Gamble, David McNeill, Suli Suder

Research output: Contribution to conferencePaper

Original languageEnglish
Pages531-537
Number of pages7
Publication statusPublished - Oct 2006
Event210th Electrochem Soc Meeting, Symp on SiGe: & Ge Materials, Processing, & Devices - Cancun, Mexico
Duration: 01 Oct 200601 Oct 2006

Conference

Conference210th Electrochem Soc Meeting, Symp on SiGe: & Ge Materials, Processing, & Devices
CountryMexico
CityCancun
Period01/10/200601/10/2006

Cite this

Armstrong, M., Baine, P., Gamble, H., McNeill, D., & Suder, S. (2006). Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration. 531-537. Paper presented at 210th Electrochem Soc Meeting, Symp on SiGe: & Ge Materials, Processing, & Devices, Cancun, Mexico.