Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration

Research output: Contribution to conference › Paper

Original language	English
Pages	531-537
Number of pages	7
Publication status	Published - Oct 2006
Event	210th Electrochem Soc Meeting, Symp on SiGe: & Ge Materials, Processing, & Devices - Cancun, Mexico Duration: 01 Oct 2006 → 01 Oct 2006

Conference	210th Electrochem Soc Meeting, Symp on SiGe: & Ge Materials, Processing, & Devices
Country/Territory	Mexico
City	Cancun
Period	01/10/2006 → 01/10/2006

Cite this

@conference{96b722ebb2574df692863d3b3cec18a8,

title = "Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration",

author = "Mervyn Armstrong and Paul Baine and Harold Gamble and David McNeill and Suli Suder",

year = "2006",

month = oct,

language = "English",

pages = "531--537",

note = "210th Electrochem Soc Meeting, Symp on SiGe: \& Ge Materials, Processing, \& Devices ; Conference date: 01-10-2006 Through 01-10-2006",

}

TY - CONF

T1 - Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration

AU - Armstrong, Mervyn

AU - Baine, Paul

AU - Gamble, Harold

AU - McNeill, David

AU - Suder, Suli

PY - 2006/10

Y1 - 2006/10

M3 - Paper

SP - 531

EP - 537

T2 - 210th Electrochem Soc Meeting, Symp on SiGe: & Ge Materials, Processing, & Devices

Y2 - 1 October 2006 through 1 October 2006

ER -