Design considerations of vertical GaN nanowire Schottky barrier diodes

Gourab Sabui; Vitaly Z. Zubialevich; Mary White; Pietro Pampili; Peter J. Parbrook; Mathew McLaren; Miryam Arredondo-Arechavala; Z. John Shen

doi:10.23919/ISPSD.2017.7988917

Design considerations of vertical GaN nanowire Schottky barrier diodes

Gourab Sabui, Vitaly Z. Zubialevich, Mary White, Pietro Pampili, Peter J. Parbrook, Mathew McLaren, Miryam Arredondo-Arechavala, Z. John Shen

Queen's University Belfast

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Design considerations for vertical Gallium Nitride (GaN) nanowire Schottky barrier diodes (NWSBDs) for high voltage applications is discussed in this paper. Preliminary quasi-vertical NWSBDs fabricated on a Sapphire substrate show rectifying properties with breakdown voltage of 100 V. The principle of dielectric Reduced SURface Field (RESURF) which is naturally compatible with the NW structure, is utilized to block high voltages (> 600 V) within the fabrication constraints of nano-pillar height and drift doping concentration. Design considerations for the NWSBD is explored through 3D TCAD simulations. TCAD simulations show the NWSBDs can block voltages upward of 700 V with very low on-resistance with optimal design. The measured and simulated results are compared with state of the art GaN devices to provide an understanding of the true potential of the GaN NW architecture as power devices offering high breakdown voltages and low on-state resistance and a reliable device operation, all on a vertical architecture and a non-native substrate.

Original language	English
Title of host publication	Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	191-194
Number of pages	4
ISBN (Electronic)	9784886860958
DOIs	https://doi.org/10.23919/ISPSD.2017.7988917
Publication status	Published - 24 Jul 2017

Keywords

GaN
Nanowire
Power semiconductor devices
Vertical GaN
Wide bandgap devices

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Sabui, G., Zubialevich, V. Z., White, M., Pampili, P., Parbrook, P. J., McLaren, M., Arredondo-Arechavala, M., & Shen, Z. J. (2017). Design considerations of vertical GaN nanowire Schottky barrier diodes. In Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017 (pp. 191-194). Article 7988917 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ISPSD.2017.7988917

@inproceedings{88905c9113a6439a997866c163c9cd5b,

title = "Design considerations of vertical GaN nanowire Schottky barrier diodes",

abstract = "Design considerations for vertical Gallium Nitride (GaN) nanowire Schottky barrier diodes (NWSBDs) for high voltage applications is discussed in this paper. Preliminary quasi-vertical NWSBDs fabricated on a Sapphire substrate show rectifying properties with breakdown voltage of 100 V. The principle of dielectric Reduced SURface Field (RESURF) which is naturally compatible with the NW structure, is utilized to block high voltages (> 600 V) within the fabrication constraints of nano-pillar height and drift doping concentration. Design considerations for the NWSBD is explored through 3D TCAD simulations. TCAD simulations show the NWSBDs can block voltages upward of 700 V with very low on-resistance with optimal design. The measured and simulated results are compared with state of the art GaN devices to provide an understanding of the true potential of the GaN NW architecture as power devices offering high breakdown voltages and low on-state resistance and a reliable device operation, all on a vertical architecture and a non-native substrate.",

keywords = "GaN, Nanowire, Power semiconductor devices, Vertical GaN, Wide bandgap devices",

author = "Gourab Sabui and Zubialevich, {Vitaly Z.} and Mary White and Pietro Pampili and Parbrook, {Peter J.} and Mathew McLaren and Miryam Arredondo-Arechavala and Shen, {Z. John}",

year = "2017",

month = jul,

day = "24",

doi = "10.23919/ISPSD.2017.7988917",

language = "English",

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Sabui, G, Zubialevich, VZ, White, M, Pampili, P, Parbrook, PJ, McLaren, M, Arredondo-Arechavala, M & Shen, ZJ 2017, Design considerations of vertical GaN nanowire Schottky barrier diodes. in Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017., 7988917, Institute of Electrical and Electronics Engineers Inc., pp. 191-194. https://doi.org/10.23919/ISPSD.2017.7988917

Design considerations of vertical GaN nanowire Schottky barrier diodes. / Sabui, Gourab; Zubialevich, Vitaly Z.; White, Mary et al.
Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 191-194 7988917.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Design considerations of vertical GaN nanowire Schottky barrier diodes

AU - Sabui, Gourab

AU - Zubialevich, Vitaly Z.

AU - White, Mary

AU - Pampili, Pietro

AU - Parbrook, Peter J.

AU - McLaren, Mathew

AU - Arredondo-Arechavala, Miryam

AU - Shen, Z. John

PY - 2017/7/24

Y1 - 2017/7/24

N2 - Design considerations for vertical Gallium Nitride (GaN) nanowire Schottky barrier diodes (NWSBDs) for high voltage applications is discussed in this paper. Preliminary quasi-vertical NWSBDs fabricated on a Sapphire substrate show rectifying properties with breakdown voltage of 100 V. The principle of dielectric Reduced SURface Field (RESURF) which is naturally compatible with the NW structure, is utilized to block high voltages (> 600 V) within the fabrication constraints of nano-pillar height and drift doping concentration. Design considerations for the NWSBD is explored through 3D TCAD simulations. TCAD simulations show the NWSBDs can block voltages upward of 700 V with very low on-resistance with optimal design. The measured and simulated results are compared with state of the art GaN devices to provide an understanding of the true potential of the GaN NW architecture as power devices offering high breakdown voltages and low on-state resistance and a reliable device operation, all on a vertical architecture and a non-native substrate.

AB - Design considerations for vertical Gallium Nitride (GaN) nanowire Schottky barrier diodes (NWSBDs) for high voltage applications is discussed in this paper. Preliminary quasi-vertical NWSBDs fabricated on a Sapphire substrate show rectifying properties with breakdown voltage of 100 V. The principle of dielectric Reduced SURface Field (RESURF) which is naturally compatible with the NW structure, is utilized to block high voltages (> 600 V) within the fabrication constraints of nano-pillar height and drift doping concentration. Design considerations for the NWSBD is explored through 3D TCAD simulations. TCAD simulations show the NWSBDs can block voltages upward of 700 V with very low on-resistance with optimal design. The measured and simulated results are compared with state of the art GaN devices to provide an understanding of the true potential of the GaN NW architecture as power devices offering high breakdown voltages and low on-state resistance and a reliable device operation, all on a vertical architecture and a non-native substrate.

KW - GaN

KW - Nanowire

KW - Power semiconductor devices

KW - Vertical GaN

KW - Wide bandgap devices

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DO - 10.23919/ISPSD.2017.7988917

M3 - Conference contribution

AN - SCOPUS:85028500861

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BT - Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Design considerations of vertical GaN nanowire Schottky barrier diodes

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Keywords

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