Design of a dual-frequency GaN HEMT-based rectifier with wide input power range

This letter proposes a design method for realizing a dual-frequency transistor-based rectifier with a wide input power range. The relationship between rectification efficiency and input power, operating frequency, and load impedance is deduced by considering the transistor’s output capacitor. The efficiency can be maintained above 60% within an input power range of 20 dB when appropriate load impedances ( RL ) are chosen. This RL further obtains the impedance space with variable input powers to design the output network. For validation, a dual-frequency rectifier operating at 0.9 and 2.4 GHz is designed based on a GaN transistor. Measurements show that the rectification efficiency is 63.76%~73.98% and 59.11%~86.53% within an input power range of 20 dB when the gate bias is −3.1 V, the dc load is 85 Ω at 0.9 and 2.4 GHz. The realized rectifier fills the gap in the field of dual-band transistor-based rectifiers with high efficiency within a large input power range.